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Toward Ferroelectric Control of Monolayer MoS2

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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2015, 15, 5, 3364-3369
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    Toward Ferroelectric Control of Monolayer MoS2
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    † Chemistry and Materials Science and Engineering Program, University of California, Riverside, California 92521, United States
    ‡ Department of Physics and Astronomy, Theodore Jorgensen Hall, 855 North 16th Street, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0299, United States
    § Columbia University, 3000 Broadway, New York, New York 10027-6941, United States
    ∥ Institute of Natural Sciences, Ural Federal University, Ekaterinburg, 620000, Russia
    *E-mail (P.A.D.): [email protected]
    *E-mail (A.G.): [email protected]
    *E-mail (L.B.): [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2015, 15, 5, 3364–3369
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    https://doi.org/10.1021/acs.nanolett.5b00687
    Published April 24, 2015
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    Abstract

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    The chemical vapor deposition (CVD) of molybdenum disulfide (MoS2) single-layer films onto periodically poled lithium niobate is possible while maintaining the substrate polarization pattern. The MoS2 growth exhibits a preference for the ferroelectric domains polarized “up” with respect to the surface so that the MoS2 film may be templated by the substrate ferroelectric polarization pattern without the need for further lithography. MoS2 monolayers preserve the surface polarization of the “up” domains, while slightly quenching the surface polarization on the “down” domains as revealed by piezoresponse force microscopy. Electrical transport measurements suggest changes in the dominant carrier for CVD MoS2 under application of an external voltage, depending on the domain orientation of the ferroelectric substrate. Such sensitivity to ferroelectric substrate polarization opens the possibility for ferroelectric nonvolatile gating of transition metal dichalcogenides in scalable devices fabricated free of exfoliation and transfer.

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    Details of substrate preparation and film growth, piezoresponse force microscopy, characterization of the ferroelectric substrates, details of the transport measurements and further explication of the transport measurements. The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b00687.

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    This article is cited by 63 publications.

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    Cite this: Nano Lett. 2015, 15, 5, 3364–3369
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.5b00687
    Published April 24, 2015
    Copyright © 2015 American Chemical Society
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