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In Situ Temperature-Dependent Transmission Electron Microscopy Studies of Pseudobinary mGeTe·Bi2Te3 (m = 3–8) Nanowires and First-Principles Calculations

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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2015, 15, 6, 3923-3930
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    In Situ Temperature-Dependent Transmission Electron Microscopy Studies of Pseudobinary mGeTe·Bi2Te3 (m = 3–8) Nanowires and First-Principles Calculations
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    † Department of Chemistry, Korea University, Jochiwon 339-700, Korea
    ‡ Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Korea
    § Nano-Bio Electron Microscopy Research Group, Korea Basic Science Institute, Daejeon 305-806, Korea
    ⊥ Department of Chemistry, Pohang University of Science and Technology, Pohang 790-784, Korea
    # Department of Physics and Division of Advanced Nuclear Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
    *E-mail: [email protected] (J.P.).
    *E-mail: [email protected] (J.P.A.).
    *E-mail: [email protected] (J.H.S.).
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    Nano Letters

    Cite this: Nano Lett. 2015, 15, 6, 3923–3930
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    https://doi.org/10.1021/acs.nanolett.5b00755
    Published April 29, 2015
    Copyright © 2015 American Chemical Society
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    Abstract

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    Phase-change nanowires (NWs) have emerged as critical materials for fast-switching nonvolatile memory devices. In this study, we synthesized a series of mGeTe·Bi2Te3 (GBT) pseudobinary alloy NWs—Ge3Bi2Te6 (m = 3), Ge4Bi2Te7 (m = 4), Ge5Bi2Te8 (m = 5), Ge6Bi2Te9 (m = 6), and Ge8Bi2Te11 (m = 8)—and investigated their composition-dependent thermal stabilities and electrical properties. As m decreases, the phase of the NWs evolves from the cubic (C) to the hexagonal (H) phase, which produces unique superlattice structures that consist of periodic 2.2–3.8 nm slabs for m = 3–8. In situ temperature-dependent transmission electron microscopy reveals the higher thermal stability of the compositions with lower m values, and a phase transition from the H phase into the single-crystalline C phase at high temperatures (400 °C). First-principles calculations, performed for the superlattice structures (m = 1–8) of GBT and mGeTe·Sb2Te3 (GST), show an increasing stability of the H phase (versus the C phase) with decreasing m; the difference in stability being more marked for GBT than for GST. The calculations explain remarkably the phase evolution of the GBT and GST NWs as well as the composition-dependent thermal stabilities. Measurement of the current–voltage curves for individual GBT NWs shows that the resistivity is in the range 3–25 mΩ·cm, and the resistivity of the H phase is lower than that of the C phase, which has been supported by the calculations.

    Copyright © 2015 American Chemical Society

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    Supporting Information

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    Experimental details, Tables S1–S4, Figures S1–S13, and Movie S1. The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b00755.

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    Cited By

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    This article is cited by 12 publications.

    1. Naor Madar, Yatir Sadia, Yaniv Gelbstein. Thermoelectric Preferred Orientation of (GeTe)0.962(Bi2Te3)0.038. ACS Applied Electronic Materials 2024, 6 (5) , 2862-2869. https://doi.org/10.1021/acsaelm.3c00790
    2. Shijian Zheng, Longbing He. In-Situ Heating TEM. 2023, 83-104. https://doi.org/10.1007/978-981-19-6845-7_4
    3. T. M. Alakbarova, Hans-Jürgen Meyer, E. N. Orujlu, I. R. Amiraslanov, M. B. Babanly. Phase equilibria of the GeTe−Bi 2 Te 3 quasi-binary system in the range 0–50 mol% Bi 2 Te 3. Phase Transitions 2021, 94 (5) , 366-375. https://doi.org/10.1080/01411594.2021.1937625
    4. Andriy Lotnyk, Torben Dankwort, Isom Hilmi, Lorenz Kienle, Bernd Rauschenbach. In situ observations of the reversible vacancy ordering process in van der Waals-bonded Ge–Sb–Te thin films and GeTe–Sb 2 Te 3 superlattices. Nanoscale 2019, 11 (22) , 10838-10845. https://doi.org/10.1039/C9NR02112D
    5. Andriy Lotnyk, Torben Dankwort, Isom Hilmi, Lorenz Kienle, Bernd Rauschenbach. Atomic-scale observation of defects motion in van der Waals layered chalcogenide based materials. Scripta Materialia 2019, 166 , 154-158. https://doi.org/10.1016/j.scriptamat.2019.03.024
    6. Massimo Longo. Advances in nanowire PCM. 2019, 443-518. https://doi.org/10.1016/B978-0-08-102584-0.00013-9
    7. Laura Lazzarini, Enzo Rotunno. Crystal structure assessment of Ge-Sb-Te nanowires. Materials Science in Semiconductor Processing 2017, 65 , 77-87. https://doi.org/10.1016/j.mssp.2016.07.008
    8. Jamo Momand, Ruining Wang, Jos E. Boschker, Marcel A. Verheijen, Raffaella Calarco, Bart J. Kooi. Dynamic reconfiguration of van der Waals gaps within GeTe–Sb 2 Te 3 based superlattices. Nanoscale 2017, 9 (25) , 8774-8780. https://doi.org/10.1039/C7NR01684K
    9. Naor Madar, Tom Givon, Dmitry Mogilyansky, Yaniv Gelbstein. High thermoelectric potential of Bi2Te3 alloyed GeTe-rich phases. Journal of Applied Physics 2016, 120 (3) https://doi.org/10.1063/1.4958973
    10. Jae Nyeong Kim, Massoud Kaviany, Ji-Hoon Shim. Optimized Z T of B i 2 T e 3 − GeTe compounds from first principles guided by homogeneous data. Physical Review B 2016, 93 (7) https://doi.org/10.1103/PhysRevB.93.075119
    11. Qi Zhang, Huiqiao Li, Lin Gan, Ying Ma, Dmitri Golberg, Tianyou Zhai. In situ fabrication and investigation of nanostructures and nanodevices with a microscope. Chemical Society Reviews 2016, 45 (9) , 2694-2713. https://doi.org/10.1039/C6CS00161K
    12. Jamo Momand, Ruining Wang, Jos E. Boschker, Marcel A. Verheijen, Raffaella Calarco, Bart J. Kooi. Interface formation of two- and three-dimensionally bonded materials in the case of GeTe–Sb 2 Te 3 superlattices. Nanoscale 2015, 7 (45) , 19136-19143. https://doi.org/10.1039/C5NR04530D
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    Nano Letters

    Cite this: Nano Lett. 2015, 15, 6, 3923–3930
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.5b00755
    Published April 29, 2015
    Copyright © 2015 American Chemical Society
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