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Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates without Foreign Catalysts

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† Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People’s Republic of China
‡ Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871, People’s Republic of China
Cite this: Nano Lett. 2016, 16, 2, 877-882
Publication Date (Web):January 20, 2016
https://doi.org/10.1021/acs.nanolett.5b03587
Copyright © 2016 American Chemical Society
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Abstract

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We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed ⟨110⟩ directions on an [100]-oriented substrate, two ⟨100⟩ directions plus four ⟨111⟩ directions on an [110]-oriented substrate, and six equivalent ⟨112⟩ directions on an [111]-oriented substrate, which correspond to the projections of ⟨111⟩ family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p–n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III–V nanodevices.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b03587.

  • Detailed cross-sectional TEM characterization of planar NWs (Section S1), statistical percentages of ordered NWs and unordered NWs on differently oriented substrates (Section S2), the preferred growth of planar NWs in terms of thermodynamics (Section S3), results for longer InAsSb NWs (Section S4), and the band alignment between Si and InAsSb (Section S5). (PDF)

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  14. Xiaoguang Yang, Wenna Du, Xianghai Ji, Xingwang Zhang, Tao Yang. Defect-free InAsSb nanowire arrays on Si substrates grown by selective-area metal–organic chemical vapor deposition. Nanotechnology 2018, 29 (40) , 405601. DOI: 10.1088/1361-6528/aad2f4.
  15. Baodan Liu, Jing Li, Wenjin Yang, Xinglai Zhang, Xin Jiang, Yoshio Bando. Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications. Small 2017, 13 (45) , 1701998. DOI: 10.1002/smll.201701998.
  16. Xianghai Ji, Xiaoguang Yang, Tao Yang. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition. Nanoscale Research Letters 2017, 12 (1) DOI: 10.1186/s11671-017-2207-5.
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