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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2016, 16, 3, 1620-1625
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Nanoscale Control of Rewriteable Doping Patterns in Pristine Graphene/Boron Nitride Heterostructures

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† Department of Physics, University of California, Berkeley, California 94720, United States
‡ Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
§ Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
∥ National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
⊥ Department of Physics, University of California, Santa Cruz, California 95064, United States
*E-mail:[email protected]
Cite this: Nano Lett. 2016, 16, 3, 1620–1625
Publication Date (Web):February 8, 2016
https://doi.org/10.1021/acs.nanolett.5b04441
Copyright © 2016 American Chemical Society
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Abstract

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Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic gating and chemical doping are the two most common methods to achieve local control of such doping. However, these approaches suffer from complicated fabrication processes that introduce contamination, change material properties irreversibly, and lack flexible pattern control. Here we demonstrate a clean, simple, and reversible technique that permits writing, reading, and erasing of doping patterns for 2D materials at the nanometer scale. We accomplish this by employing a graphene/boron nitride heterostructure that is equipped with a bottom gate electrode. By using electron transport and scanning tunneling microscopy (STM), we demonstrate that spatial control of charge doping can be realized with the application of either light or STM tip voltage excitations in conjunction with a gate electric field. Our straightforward and novel technique provides a new path toward on-demand graphene p–n junctions and ultrathin memory devices.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b04441.

  • (1) Determination of Ṽg for light-induced doping, (2) procedure for converting dI/dV intensity to charge density fluctuations after light-induced doping, (3) tip-doping dI/dV spectra for Vg > 0 V, (4) conversion of dI/dV intensity to charge density after tip-doping, (5) detailed tip-doping procedure, (6) G(Vg) transport data before and after tip-doping, and (7) discussion of the nature of the BN defects. (PDF)

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