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Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets

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† State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
‡ Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
*E-mail: [email protected] (J.H.Z.).
*E-mail: [email protected] (H.Q.X.).
Cite this: Nano Lett. 2016, 16, 2, 834-841
Publication Date (Web):January 20, 2016
https://doi.org/10.1021/acs.nanolett.5b04845
Copyright © 2016 American Chemical Society
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Abstract

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Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such layered InSb materials are highly desired for searching for and manipulation of Majorana Fermions in solid state, a fundamental research task in physics today, and for development of novel high-speed nanoelectronic and infrared optoelectronic devices. Here, we report on a new route toward growth of single-crystalline, layered InSb materials. We demonstrate the successful growth of free-standing, two-dimensional InSb nanosheets on one-dimensional InAs nanowires by molecular-beam epitaxy. The grown InSb nanosheets are pure zinc-blende single crystals. The length and width of the InSb nanosheets are up to several micrometers and the thickness is down to ∼10 nm. The InSb nanosheets show a clear ambipolar behavior and a high electron mobility. Our work will open up new technology routes toward the development of InSb-based devices for applications in nanoelectronics, optoelectronics, and quantum electronics and for the study of fundamental physical phenomena.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b04845.

  • Morphology controlling, size and thickness information, detailed crystal structure and quality information, and chemical composition of the InSb nanosheets. Seed-particles information on the InSb nanostructures. A nucleation process of the InSb nanosheets. Summary of the Hall-bar device parameters and extraction of the field-effect mobility and the Hall mobility of a nanosheet. (PDF)

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