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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

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Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique, Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France
Cite this: Nano Lett. 2016, 16, 3, 1863–1868
Publication Date (Web):February 17, 2016
https://doi.org/10.1021/acs.nanolett.5b04949
Copyright © 2016 American Chemical Society

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    Abstract

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    Post-growth in situ partial SiNx masking of GaN-based epitaxial layers grown in a molecular beam epitaxy reactor is used to get GaN selective area sublimation (SAS) by high temperature annealing. Using this top-down approach, nanowires (NWs) with nanometer scale diameter are obtained from GaN and InxGa1–xN/GaN quantum well epitaxial structures. After GaN regrowth on InxGa1–xN/GaN NWs resulting from SAS, InxGa1–xN quantum disks (QDisks) with nanometer sizes in the three dimensions are formed. Low temperature microphotoluminescence experiments demonstrate QDisk multilines photon emission around 3 eV with individual line widths of 1–2 meV.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b04949.

    • Comparison of the photoluminescence efficiency of an InxGa1–xN/GaN multiple quantum well and InxGa1–xN/GaN quantum disks resulting from a selective area sublimation process (PDF)

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