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Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System

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† Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra, 08193 Barcelona, Spain
‡ Institut d’Électronique, de Microélectronique et de Nanotechnologie, UMR CNRS 8520, Avenue Poincaré, C.S. 60069, 59652 Villeneuve d’Ascq, France
§ Materials Research and Technology (MRT) Department, Luxembourg Institute of Science and Technology (LIST), 5, avenue des Hauts-Fourneaux, L-4362 Esch-sur-Alzette, Luxembourg
∥ CNRS-Laboratoire d’Analyse et d’Architecture des Systèmes (LAAS), Université de Toulouse, 7 avenue du colonel Roche, 31400 Toulouse, France
⊥ Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA) -ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza, Spain
# Institució Catalana de Recerca i Estudis Avançats (ICREA), 08010 Barcelona, Catalonia, Spain
∇ Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200, Australia
Cite this: Nano Lett. 2016, 16, 2, 825-833
Publication Date (Web):January 6, 2016
https://doi.org/10.1021/acs.nanolett.5b05125
Copyright © 2016 American Chemical Society
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Ultra narrow bandgap III–V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. Through careful morphological and crystallographic characterization we show how this unique geometry is the result of a single twinning event in an otherwise pure zinc blende structure. Four-terminal electrical measurements performed in both the Hall and van der Pauw configurations reveal a room temperature electron mobility greater than 12 000 cm2·V–1·s–1. Quantized conductance in a quantum point contact processed with a split-gate configuration is also demonstrated. We thus introduce InSb “nanosails” as a versatile and convenient platform for realizing new device and physics experiments with a strong interplay between electronic and spin degrees of freedom.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b05125.

  • Methods, growth, characterization and device processing (Section SA). Statistics on the yield of different morphologies (Section SB, Figures S1–S3). Analysis of the InAs/InSb interface (Section SC, Figure S4). Presence of a unique twin boundary (Section SD, Figures S5 and S6). Faceting of the nanosails (Section SE, Figure S7). Electrical measurements (SF, Section Figures S8–S11) (PDF)

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  19. D. Pan, D. X. Fan, N. Kang, J. H. Zhi, X. Z. Yu, H. Q. Xu, and J. H. Zhao . Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets. Nano Letters 2016, 16 (2) , 834-841. DOI: 10.1021/acs.nanolett.5b04845.
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  32. Xiaoming Yuan, Jiabao Yang, Jun He, Hark Hoe Tan, Chennupati Jagadish. Role of surface energy in nanowire growth. Journal of Physics D: Applied Physics 2018, 51 (28) , 283002. DOI: 10.1088/1361-6463/aac9f4.
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  35. Xiaoming Yuan, Yanan Guo, Philippe Caroff, Jun He, Hark Hoe Tan, Chennupati Jagadish. Dopant-Free Twinning Superlattice Formation in InSb and InP Nanowires. physica status solidi (RRL) - Rapid Research Letters 2017, 11 (11) , 1700310. DOI: 10.1002/pssr.201700310.
  36. Qiujun Zhang, Yuanhuan Cao, Kan Li, Huayong Pan, Shaoyun Huang, Yingjie Xing, H.Q. Xu. Synthesis of Mn-doped indium antimonide nanowires by multi-step depositions and annealing. Journal of Physics and Chemistry of Solids 2017, 110, 43-48. DOI: 10.1016/j.jpcs.2017.05.031.
  37. Kasidid Yaemsunthorn, Titipun Thongtem, Somchai Thongtem, Chamnan Randorn. Synthesis of InSb nanocrystals in an air atmosphere and their photocatalytic activity from near-infrared to ultra-violet. Materials Science in Semiconductor Processing 2017, 68, 53-57. DOI: 10.1016/j.mssp.2017.06.001.
  38. Heidi Potts, Nicholas P Morgan, Gözde Tütüncüoglu, Martin Friedl, Anna Fontcuberta i Morral. Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets. Nanotechnology 2017, 28 (5) , 054001. DOI: 10.1088/1361-6528/28/5/054001.
  39. PengYi Tang, HaiBing Xie, Carles Ros, LiJuan Han, Martí Biset-Peiró, YongMin He, Wesley Kramer, Alejandro Pérez Rodríguez, Edgardo Saucedo, José Ramón Galán-Mascarós, Teresa Andreu, Joan Ramon Morante, Jordi Arbiol. Enhanced photoelectrochemical water splitting of hematite multilayer nanowire photoanodes by tuning the surface state via bottom-up interfacial engineering. Energy & Environmental Science 2017, 10 (10) , 2124-2136. DOI: 10.1039/C7EE01475A.
  40. Jordi Arbiol, Aziz Genç, Reza R. Zamani, María de la Mata. Insight on the fine structure of semiconductor nanowires down to single atom detection: correlation to their physical properties. 2016,,, 554-555. DOI: 10.1002/9783527808465.EMC2016.5193.
  41. Xinliang Chen, Honglai Li, Zhaoyang Qi, Tiefeng Yang, Yankun Yang, Xuelu Hu, Xuehong Zhang, Xiaoli Zhu, Xiujuan Zhuang, Wei Hu, Anlian Pan. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets. Nanotechnology 2016, 27 (50) , 505602. DOI: 10.1088/0957-4484/27/50/505602.
  42. Florian Vigneau, Önder Gül, Yann-Michel Niquet, Diana Car, Sebastien R. Plissard, Walter Escoffier, Erik P. A. M. Bakkers, Ivan Duchemin, Bertrand Raquet, Michel Goiran. Revealing the band structure of InSb nanowires by high-field magnetotransport in the quasiballistic regime. Physical Review B 2016, 94 (23) DOI: 10.1103/PhysRevB.94.235303.
  43. Muhammad Shafa, Sadaf Akbar, Lei Gao, Muhammad Fakhar-e-Alam, Zhiming M. Wang. Indium Antimonide Nanowires: Synthesis and Properties. Nanoscale Research Letters 2016, 11 (1) DOI: 10.1186/s11671-016-1370-4.
  44. Ashwin J. Shahani, Peter W. Voorhees. Twin-mediated crystal growth. Journal of Materials Research 2016, 31 (19) , 2936-2947. DOI: 10.1557/jmr.2016.308.

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