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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2016, 16, 5, 3160-3165
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How Graphene Islands Are Unidirectionally Aligned on the Ge(110) Surface

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† State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
‡ Department of Physics, East China Normal University, Shanghai 200241, China
§ Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
∥ Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong 999077, China
⊥ Institute of Textiles and Clothing, Hong Kong Polytechnic University, Kowloon, Hong Kong 999077, China
Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
*E-mail: [email protected]
*E-mail: [email protected]
Cite this: Nano Lett. 2016, 16, 5, 3160–3165
Publication Date (Web):April 21, 2016
https://doi.org/10.1021/acs.nanolett.6b00486
Copyright © 2016 American Chemical Society
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Abstract

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The unidirectional alignment of graphene islands is essential to the synthesis of wafer-scale single-crystal graphene on Ge(110) surface, but the underlying mechanism is not well-understood. Here we report that the necessary coalignment of the nucleating graphene islands on Ge(110) surface is caused by the presence of step-pattern; we show that on the preannealed Ge(110) textureless surface the graphene islands appear nonpreferentially orientated, while on the Ge(110) surfaces with natural step pattern, all graphene islands emerge coaligned. First-principles calculations and theoretical analysis reveal this different alignment behaviors originate from the strong chemical binding formed between the graphene island edges and the atomic steps on the Ge(110) surface, and the lattice matching at edge-step interface dictates the alignment of graphene islands with the armchair direction of graphene along the [−110] direction of the Ge(110) substrate.

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  • Experimental methods, AFM images and DFT calculations for phase diagram calculation, formation energy of the Ge-Gr interface (PDF)

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