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Design and Room-Temperature Operation of GaAs/AlGaAs Multiple Quantum Well Nanowire Lasers

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Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory, 2601, Australia
*D.S. e-mail: [email protected]
*S.M. e-mail: [email protected]
Cite this: Nano Lett. 2016, 16, 8, 5080–5086
Publication Date (Web):July 26, 2016
Copyright © 2016 American Chemical Society

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    We present the design and room-temperature lasing characteristics of single nanowires containing coaxial GaAs/AlGaAs multiple quantum well (MQW) active regions. The TE01 mode, which has a doughnut-shaped intensity profile and is polarized predominantly in-plane to the MQWs, is predicted to lase in these nanowire heterostructures and is thus chosen for the cavity design. Through gain and loss calculations, we determine the nanowire dimensions required to minimize loss for the TE01 mode and determine the optimal thickness and number of QWs for minimizing the threshold sheet carrier density. In particular, we show that there is a limit to the minimum and maximum number of QWs that are required for room-temperature lasing. Based on our design, we grew nanowires of a suitable diameter containing eight uniform coaxial GaAs/AlGaAs MQWs. Lasing was observed at room temperature from optically pumped single nanowires and was verified to be from TE01 mode by polarization measurements. The GaAs MQW nanowire lasers have a threshold fluence that is a factor of 2 lower than that previously demonstrated for room-temperature GaAs nanowire lasers.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.6b01973.

    • Additional information on the design of GaAs MQW nanowire lasers, growth and optical characterization, and laser characterization. Figures showing a schematic of the MQW nanowire heterostructure; effective index, mode propagation loss, and mirror loss in a GaAs/AlGaAs/GaAs core-shell-cap nanowire; loss for the TE01 mode in a 5 μm long GaAs/AlGaAs/GaAs core-shell-cap nanowire with 80 nm diameter core and 5 nm thick cap; GaAs/Al0.42Ga0.58As QW material-gain spectrum; TE01 mode electric-field intensity profile, and position of the field maximum; estimated modal gain for guided modes supported in a 420 nm diameter GaAs MQW nanowire; modal gain vs pump fluence for the TE01 mode in a 420 nm diameter and 480 nm diameter GaAs MQW nanowire; SEM image of the GaAs MQW nanowires grown for this study; HAADF-STEM images of nanowire cross-sections; the average thickness of each layer in the heterostructure measured from five different nanowire cross-sections; room-temperature PL spectrum obtained from the GaAs MQW nanowire laser under very low pump fluence and an analytical fit; SEM images of nanowire lasers; lasing spectra of the nanowire laser; simulated TE01 mode profile in the cross-section of the GaAs MQW nanowire; polarization dependence of the nanowire guided modes determined from simulations; and modal gain vs carrier density and pump fluence modelled for GaAs MQW and bulk GaAs nanowire lasers. Tables showing mode confinement factor for TE01 mode in a 420 nm diameter nanowire; growth time for each shell layer in the MQW nanowire heterostructure; definition of parameters in rate equations and values used for fit; and a comparison of threshold values of III–V semiconductor nanowire lasers. (PDF)

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