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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2017, 17, 2, 622-630
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Near Full-Composition-Range High-Quality GaAs1–xSbx Nanowires Grown by Molecular-Beam Epitaxy

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† State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
‡ Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, China
Cite this: Nano Lett. 2017, 17, 2, 622-630
Publication Date (Web):January 19, 2017
https://doi.org/10.1021/acs.nanolett.6b03326
Copyright © 2017 American Chemical Society
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Abstract

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Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAs1–xSbx nanowires by molecular-beam epitaxy. GaAs1–xSbx nanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAs1–xSbx nanowires with low Sb content can be grown directly on Si(111) substrates (0 ≤ x ≤ 0.60) and GaAs nanowire stems (0 ≤ x ≤ 0.50) by tuning the Sb and As fluxes. To obtain GaAs1–xSbx nanowires with x ranging from 0.60 to 0.93, we grow the GaAs1–xSbx nanowires on GaAs nanowire stems by tuning the As background. Photoluminescence measurements confirm that the emission wavelength of the GaAs1–xSbx nanowires is tunable from 844 nm (GaAs) to 1760 nm (GaAs0.07Sb0.93). High-resolution transmission electron microscopy images show that the grown GaAs1–xSbx nanowires have pure zinc-blende crystal structure. Room-temperature Raman spectra reveal a redshift of the optical phonons in the GaAs1–xSbx nanowires with x increasing from 0 to 0.93. Field-effect transistors based on individual GaAs1–xSbx nanowires are fabricated, and rectifying behavior is observed in devices with low Sb content, which disappears in devices with high Sb content. The successful growth of high-quality GaAs1–xSbx nanowires with near full-range bandgap tuning may speed up the development of high-performance nanowire devices based on such ternaries.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.6b03326.

  • Detailed growth procedures, growth parameters and equipment for GaAs1–xSbx and GaAs/GaAs1–xSbx nanowire growth and characterization; SEM images of GaAs1–xSbx nanowires grown directly on Si(111) substrates; SEM images of GaAs1–xSbx nanowires grown on GaAs nanowire stems by increasing the As background flux; structure and composition information on GaAs/GaAs1–xSbx nanowires; full PL spectra of GaAs1–xSbx nanowire with x of 0.80 and 0.93; fitting the Raman spectra with Lorentzian lineshapes and detailed analysis of the frequencies shifts for Raman modes; electrical properties of FET devices based on GaAs1–xSbx nanowires of different Sb content (PDF)

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This article is cited by 33 publications.

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  21. Prokhor A Alekseev, Mikhail S Dunaevskiy, George E Cirlin, Rodion R Reznik, Alexander N Smirnov, Demid A Kirilenko, Valery Yu Davydov, Vladimir L Berkovits. Unified mechanism of the surface Fermi level pinning in III-As nanowires. Nanotechnology 2018, 29 (31) , 314003. DOI: 10.1088/1361-6528/aac480.
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  30. Lixia Li, Dong Pan, Hyok So, Xiaolei Wang, Zhifeng Yu, Jianhua Zhao. GaAsSb/InAs core-shell nanowires grown by molecular-beam epitaxy. Journal of Alloys and Compounds 2017, 724, 659-665. DOI: 10.1016/j.jallcom.2017.06.346.
  31. Shouzhu Niu, Zhipeng Wei, Xuan Fang, Dengkui Wang, Xinwei Wang, Xian Gao, Rui Chen. Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors. Crystals 2017, 7 (11) , 337. DOI: 10.3390/cryst7110337.
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  33. Jonas Johansson, Masoomeh Ghasemi. Kinetically limited composition of ternary III-V nanowires. Physical Review Materials 2017, 1 (4) DOI: 10.1103/PhysRevMaterials.1.040401.

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