logo

OR SEARCH CITATIONS

My Activity
Publications
CONTENT TYPES

Figure 1Loading Img
Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2016, 16, 12, 7580-7587
RETURN TO ISSUEPREVLetterNEXT

Selective-Area MOCVD Growth and Carrier-Transport-Type Control of InAs(Sb)/GaSb Core–Shell Nanowires

View Author Information
† Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People’s Republic of China
‡ College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
§ Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People’s Republic of China
*E-mail: [email protected] (T.Y.).
Cite this: Nano Lett. 2016, 16, 12, 7580-7587
Publication Date (Web):November 29, 2016
https://doi.org/10.1021/acs.nanolett.6b03429
Copyright © 2016 American Chemical Society
RIGHTS & PERMISSIONS
Article Views
777
Altmetric
-
Citations
14
LEARN ABOUT THESE METRICS

Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.

Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.

The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.

Read OnlinePDF (7 MB)
Supporting Info (1)»
SUBJECTS:

Abstract

Abstract Image

We report the first selective-area growth of high quality InAs(Sb)/GaSb core–shell nanowires on Si substrates using metal–organic chemical vapor deposition (MOCVD) without foreign catalysts. Transmission electron microscopy (TEM) analysis reveals that the overgrowth of the GaSb shell is highly uniform and coherent with the InAs(Sb) core without any misfit dislocations. To control the structural properties and reduce the planar defect density in the self-catalyzed InAs core nanowires, a trace amount of Sb was introduced during their growth. As the Sb content increases from 0 to 9.4%, the crystal structure of the nanowires changes from a mixed wurtzite (WZ)/zinc-blende (ZB) structure to a perfect ZB phase. Electrical measurements reveal that both the n-type InAsSb core and p-type GaSb shell can work as active carrier transport channels, and the transport type of core–shell nanowires can be tuned by the GaSb shell thickness and back-gate voltage. This study furthers our understanding of the Sb-induced crystal-phase control of nanowires. Furthermore, the high quality InAs(Sb)/GaSb core–shell nanowire arrays obtained here pave the foundation for the fabrication of the vertical nanowire-based devices on a large scale and for the study of fundamental quantum physics.

KEYWORDS:

Supporting Information

ARTICLE SECTIONS
Jump To

The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.6b03429.

  • GaSb shell thickness as a function of the shell growth time (Figure S1), more EDS measurements of the InAs/GaSb core–shell nanowires (Figure S2), the comparison of the difference in the visibility of the core–shell structure from ⟨110⟩ and ⟨211⟩ zone axes (Figure S3), Raman measurements of the corresponding nanowires (Figure S4), HRTEM images of the top region of the InAs/GaSb core–shell nanowires (Figure S5), stacking sequences of stacking faults, twin planes, and polytype boundaries (Figure S6), TEM images from different sections of the InAsSb nanowires with Sb contents of 6.8% and 9.4% (Figure S7), and statistics analyses of the InAs1–xSbx/GaSb core–shell nanowire morphology (Figure S8) (PDF)

Terms & Conditions

Electronic Supporting Information files are available without a subscription to ACS Web Editions. The American Chemical Society holds a copyright ownership interest in any copyrightable Supporting Information. Files available from the ACS website may be downloaded for personal use only. Users are not otherwise permitted to reproduce, republish, redistribute, or sell any Supporting Information from the ACS website, either in whole or in part, in either machine-readable form or any other form without permission from the American Chemical Society. For permission to reproduce, republish and redistribute this material, requesters must process their own requests via the RightsLink permission system. Information about how to use the RightsLink permission system can be found at http://pubs.acs.org/page/copyright/permissions.html.

Cited By

This article is cited by 14 publications.

  1. Omer Arif, Valentina Zannier, Ang Li, Francesca Rossi, Daniele Ercolani, Fabio Beltram, Lucia Sorba. Growth and Strain Relaxation Mechanisms of InAs/InP/GaAsSb Core-Dual-Shell Nanowires. Crystal Growth & Design 2020, 20 (2) , 1088-1096. DOI: 10.1021/acs.cgd.9b01421.
  2. Han Gao, Wen Sun, Qiang Sun, Hark Hoe Tan, Chennupati Jagadish, Jin Zou. Compositional Varied Core–Shell InGaP Nanowires Grown by Metal–Organic Chemical Vapor Deposition. Nano Letters 2019, 19 (6) , 3782-3788. DOI: 10.1021/acs.nanolett.9b00915.
  3. Bernhard Mandl, Mario Keplinger, Maria E. Messing, Dominik Kriegner, Reine Wallenberg, Lars Samuelson, Günther Bauer, Julian Stangl, Václav Holý, and Knut Deppert . Self-Seeded Axio-Radial InAs–InAs1–xPx Nanowire Heterostructures beyond “Common” VLS Growth. Nano Letters 2018, 18 (1) , 144-151. DOI: 10.1021/acs.nanolett.7b03668.
  4. H.J. Joyce. III‐V Nanowires and Related Nanostructures. 2019,,, 217-239. DOI: 10.1002/9781119313021.ch7.
  5. Sankalp Kumar Singh, Ramesh Kumar Kakkerla, H. Bijo Joseph, Ankur Gupta, Deepak Anandan, Venkatesan Nagarajan, Hung Wei Yu, D. John Thiruvadigal, Edward Yi Chang. Optimization of InAs/GaSb core-shell nanowire structure for improved TFET performance. Materials Science in Semiconductor Processing 2019, 101, 247-252. DOI: 10.1016/j.mssp.2019.06.004.
  6. Giorgos Boras, Xuezhe Yu, Huiyun Liu. III–V ternary nanowires on Si substrates: growth, characterization and device applications. Journal of Semiconductors 2019, 40 (10) , 101301. DOI: 10.1088/1674-4926/40/10/101301.
  7. Dingding Ren, Lyubomir Ahtapodov, Antonius T J van Helvoort, Helge Weman, Bjørn-Ove Fimland. Epitaxially grown III-arsenide-antimonide nanowires for optoelectronic applications. Nanotechnology 2019, 30 (29) , 294001. DOI: 10.1088/1361-6528/ab13ed.
  8. Zhaofeng Gao, Jiamin Sun, Mingming Han, Yanxue Yin, Yu Gu, Zai-xing Yang, Haibo Zeng. Recent advances in Sb-based III–V nanowires. Nanotechnology 2019, 30 (21) , 212002. DOI: 10.1088/1361-6528/ab03ee.
  9. SenPo Yip, Lifan Shen, Johnny C Ho. Recent advances in III-Sb nanowires: from synthesis to applications. Nanotechnology 2019, 30 (20) , 202003. DOI: 10.1088/1361-6528/aafcce.
  10. Daotong You, Chunxiang Xu, Jie Zhao, Feifei Qin, Wei Zhang, Ru Wang, Zengliang Shi, Qiannan Cui. Single‐Crystal ZnO/AlN Core/Shell Nanowires for Ultraviolet Emission and Dual‐Color Ultraviolet Photodetection. Advanced Optical Materials 2019, 7 (6) , 1801522. DOI: 10.1002/adom.201801522.
  11. Mohadeseh A. Baboli, Michael A. Slocum, Hyun Kum, Thomas S. Wilhelm, Stephen J. Polly, Seth M. Hubbard, Parsian K. Mohseni. Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping. CrystEngComm 2019, 21 (4) , 602-615. DOI: 10.1039/C8CE01666F.
  12. Deepak Anandan, Ramesh Kumar Kakkerla, Hung Wei Yu, Hua Lun Ko, Venkatesan Nagarajan, Sankalp Kumar Singh, Ching Ting Lee, Edward Yi Chang. Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (1 1 1) substrate by MOCVD. Journal of Crystal Growth 2019, 506, 45-54. DOI: 10.1016/j.jcrysgro.2018.09.046.
  13. Xianghai Ji, Xiren Chen, Xiaoguang Yang, Xingwang Zhang, Jun Shao, Tao Yang. Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires. Nanoscale Research Letters 2018, 13 (1) DOI: 10.1186/s11671-018-2690-3.
  14. Xianghai Ji, Xiaoguang Yang, Tao Yang. Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition. Nanoscale Research Letters 2017, 12 (1) DOI: 10.1186/s11671-017-2207-5.

Pair your accounts.

Export articles to Mendeley

Get article recommendations from ACS based on references in your Mendeley library.

Pair your accounts.

Export articles to Mendeley

Get article recommendations from ACS based on references in your Mendeley library.

You’ve supercharged your research process with ACS and Mendeley!

STEP 1:
Click to create an ACS ID

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

OOPS

You have to login with your ACS ID befor you can login with your Mendeley account.

MENDELEY PAIRING EXPIRED
Your Mendeley pairing has expired. Please reconnect

This website uses cookies to improve your user experience. By continuing to use the site, you are accepting our use of cookies. Read the ACS privacy policy.

CONTINUE