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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2017, 17, 3, 1552-1558
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Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength

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† State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People’s Republic of China
‡State Key Laboratory of Surface Physics, Department of Physics and §Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, People’s Republic of China
∥ Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People’s Republic of China
*E-mail: [email protected]
*E-mail: [email protected]
Cite this: Nano Lett. 2017, 17, 3, 1552–1558
Publication Date (Web):January 30, 2017
https://doi.org/10.1021/acs.nanolett.6b04675
Copyright © 2017 American Chemical Society
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Abstract

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Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.6b04675.

  • Experimental methods, luminescence spectra images and FDTD simulation results (PDF)

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Cited By

This article is cited by 7 publications.

  1. S. Glassner, H. Keshmiri, D. J. Hill, J. F. Cahoon, B. Fernandez, M. I. den Hertog, A. Lugstein. Tuning Electroluminescence from a Plasmonic Cavity-Coupled Silicon Light Source. Nano Letters 2018, 18 (11) , 7230-7237. https://doi.org/10.1021/acs.nanolett.8b03391
  2. Jia Zhu, Guanzhou Lin, Yun Huang, Kenan Zhang, Meizhang Wu, Wengang Wu, Peimin Lu. Three-dimensional cavity-coupled metamaterials for plasmonic color and real-time colorimetric biosensors. Nanoscale 2020, 12 (7) , 4418-4425. https://doi.org/10.1039/C9NR10343K
  3. Yunqian He, Yi Yang, Zicheng Lu, Yuelin Wang, Tie Li. Novel fabrication for vertically stacked inverted triangular and diamond-shaped silicon nanowires on (1 0 0) single crystal silicon wafer. Journal of Micromechanics and Microengineering 2020, 30 (1) , 015003. https://doi.org/10.1088/1361-6439/ab5125
  4. Fatima, Aaron Forde, Talgat M. Inerbaev, Nuri Oncel, Dmitri S. Kilin. Time-resolved Optical Properties of SiNW Oriented in Crystallographic Direction. MRS Advances 2019, 4 (36) , 2009-2014. https://doi.org/10.1557/adv.2019.267
  5. Yang Ji, Zewen Lin, Xiaolong Liu, Jian Liu, Huafeng Yang, Dongke Li, Jingjing Liu, Jun Xu, Wei Li, Kunji Chen. Dual Management of Electrons and Photons to Get High‐Performance Light Emitting Devices Based on Si Nanowires and Si Quantum Dots with Al 2 O 3 ‐Ag Hybrid Nanostructures. Particle & Particle Systems Characterization 2018, 35 (12) , 1800289. https://doi.org/10.1002/ppsc.201800289
  6. Yang Ji, Yingying Zhai, Huafeng Yang, Jingjing Liu, Wenyi Shao, Jun Xu, Wei Li, Kunji Chen. Improved device performances based on Si quantum dot/Si nanowire hetero-structures by inserting an Al 2 O 3 thin layer. Nanoscale 2017, 9 (41) , 16038-16045. https://doi.org/10.1039/C7NR05694J
  7. Shunkai Lu, Bin Wu, Yuyang Sun, Yafei Cheng, Fan Liao, Mingwang Shao. Photoluminescence of pure silicon quantum dots embedded in an amorphous silica wire array. Journal of Materials Chemistry C 2017, 5 (27) , 6713-6717. https://doi.org/10.1039/C7TC01117B

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