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Scalable Quantum Photonics with Single Color Centers in Silicon Carbide

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† E. L. Ginzton Laboratory, Stanford University, Stanford, California 94305, United States
‡ 3rd Institute of Physics, IQST, and Research Center SCOPE, University of Stuttgart, 70569 Stuttgart, Germany
§ Center for Quantum Information, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea
∥ Department of Physics, Chemistry, and Biology, Linköping University, SE-58183 Linköping, Sweden
⊥r National Institutes for Quantum and Radiological Science and Technology (QST), Takasaki, Gunma 370-1292, Japan
*E-mail: [email protected]
*E-mail: [email protected]
Cite this: Nano Lett. 2017, 17, 3, 1782–1786
Publication Date (Web):February 22, 2017
https://doi.org/10.1021/acs.nanolett.6b05102
Copyright © 2017 American Chemical Society
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    Abstract

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    Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400–1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.

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