Scalable Quantum Photonics with Single Color Centers in Silicon CarbideClick to copy article linkArticle link copied!
- Marina Radulaski
- Matthias Widmann
- Matthias Niethammer
- Jingyuan Linda Zhang
- Sang-Yun Lee
- Torsten Rendler
- Konstantinos G. Lagoudakis
- Nguyen Tien Son
- Erik Janzén
- Takeshi Ohshima
- Jörg Wrachtrup
- Jelena Vučković
Abstract
Silicon carbide is a promising platform for single photon sources, quantum bits (qubits), and nanoscale sensors based on individual color centers. Toward this goal, we develop a scalable array of nanopillars incorporating single silicon vacancy centers in 4H-SiC, readily available for efficient interfacing with free-space objective and lensed-fibers. A commercially obtained substrate is irradiated with 2 MeV electron beams to create vacancies. Subsequent lithographic process forms 800 nm tall nanopillars with 400–1400 nm diameters. We obtain high collection efficiency of up to 22 kcounts/s optical saturation rates from a single silicon vacancy center while preserving the single photon emission and the optically induced electron-spin polarization properties. Our study demonstrates silicon carbide as a readily available platform for scalable quantum photonics architecture relying on single photon sources and qubits.
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