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Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary
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    Double-Spiral Hexagonal Boron Nitride and Shear Strained Coalescence Boundary
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    • Hyo Ju Park
      Hyo Ju Park
      School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
      Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
      More by Hyo Ju Park
    • Roland Yingjie Tay
      Roland Yingjie Tay
      School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      Temasek Laboratories@NTU, 50 Nanyang Avenue, Singapore 639798, Singapore
    • Xiao Wang
      Xiao Wang
      Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
      More by Xiao Wang
    • Wen Zhao
      Wen Zhao
      Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
      More by Wen Zhao
    • Jung Hwa Kim
      Jung Hwa Kim
      School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
      More by Jung Hwa Kim
    • Rodney S. Ruoff
      Rodney S. Ruoff
      School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
      Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
      Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
    • Feng Ding
      Feng Ding
      School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
      Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
      More by Feng Ding
    • Edwin Hang Tong Teo*
      Edwin Hang Tong Teo
      School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
      *E-mail: [email protected]
    • Zonghoon Lee*
      Zonghoon Lee
      School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
      Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan 44919, Republic of Korea
      *E-mail: [email protected]
      More by Zonghoon Lee
    Other Access OptionsSupporting Information (2)

    Nano Letters

    Cite this: Nano Lett. 2019, 19, 7, 4229–4236
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    https://doi.org/10.1021/acs.nanolett.8b05034
    Published March 7, 2019
    Copyright © 2019 American Chemical Society

    Abstract

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    Among the different growth mechanisms for two-dimensional (2D) hexagonal boron nitride (h-BN) synthesized using chemical vapor deposition, spiraling growth of h-BN has not been reported. Here we report the formation of intertwined double-spiral few-layer h-BN that is driven by screw dislocations located at the antiphase boundaries of monolayer domains. The microstructure and stacking configurations were studied using a combination of dark-field and atomic resolution transmission electron microscopy. Distinct from other 2D materials with single-spiral structures, the double-spiral structure enables the intertwined h-BN layers to preserve the most stable AA′ stacking configuration. We also found that the occurrence of shear strains at the boundaries of merged spiral islands is dependent on the propagation directions of encountering screw dislocations and presented the strained features by density functional theory calculations and atomic image simulations. This study unveils the double-spiral growth of 2D h-BN multilayers and the creation of a shear strain band at the coalescence boundary of two h-BN spiral clusters.

    Copyright © 2019 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.8b05034.

    • Multilayer h-BN islands grown along defect lines, demonstration of top growth of h-BN spirals, top growth of h-BN spirals, relation between width of sheared region and the width of the square lattice region, relation between shear strength and the periodicity of the square lattice region, theoretical analysis of a shear strain band, deduction of width of shear strain band, theoretical model used to calculate the increase in total energy caused by shear strain in h-BN, theoretical estimation of G, lattice constants and shear modulus for the chosen supercells, theoretical estimation of α, relation between the van der Waals energy difference and step distance, and dependences of ΔEtotal, ΔEED, and ΔEvdW on the width of the shear strain band (PDF)

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    Cited By

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    This article is cited by 21 publications.

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    Nano Letters

    Cite this: Nano Lett. 2019, 19, 7, 4229–4236
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acs.nanolett.8b05034
    Published March 7, 2019
    Copyright © 2019 American Chemical Society

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