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Carrier Recombination in the Base, Interior, and Surface of InAs/InAlAs Core–Shell Nanowires Grown on Silicon

  • Kailing Zhang
    Kailing Zhang
    Department of Physics and Astronomy  and  Iowa CREATES, University of Iowa, Iowa City, Iowa 52242, United States
  • Xinxin Li
    Xinxin Li
    Department of Physics and Astronomy  and  Iowa CREATES, University of Iowa, Iowa City, Iowa 52242, United States
    More by Xinxin Li
  • Weitao Dai
    Weitao Dai
    Department of Physics and Astronomy  and  Iowa CREATES, University of Iowa, Iowa City, Iowa 52242, United States
    More by Weitao Dai
  • Fatima Toor
    Fatima Toor
    Department of Physics and Astronomy,  Iowa CREATES  and  Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242, United States
    More by Fatima Toor
  • , and 
  • J. P. Prineas*
    J. P. Prineas
    Department of Physics and Astronomy,  Iowa CREATES  and  Department of Electrical and Computer Engineering, University of Iowa, Iowa City, Iowa 52242, United States
    *E-mail: [email protected]
Cite this: Nano Lett. 2019, 19, 7, 4272–4278
Publication Date (Web):June 17, 2019
https://doi.org/10.1021/acs.nanolett.9b00517
Copyright © 2019 American Chemical Society

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    Abstract

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    We report on carrier recombination within self-catalyzed InAs/InAlAs core–shell nanowires (NWs), disentangling recombination rates at the ends, sidewalls, and interior of the NWs. Ultrafast optical pump–probe spectroscopy measurements were performed from 77—293 K on the free-standing, variable-sized NWs grown on lattice-mismatched Si(111) substrates, independently varying NW length and diameter. We found NW carrier recombination in the interior is nontrivial compared to the surface recombination, especially at 293 K. Surface recombination is dominated by carrier recombination at the NW sidewall, while contributions from the highly strained, impure NW base are negligible.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.9b00517.

    • NW geometrical, electrical, and optical data, including NW dimensions for all samples; measurement of NW background carrier density; measurement of NW light absorption; COMSOL simulation of NW absorption density distribution; and determination of SRH dominance in minority carrier lifetime in all samples (PDF)

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    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    This article is cited by 7 publications.

    1. Lin Han, Jie Lin, Jun Liu, Eli Fahrenkrug, Yalu Guan, Kai Sun, Yiqun Wang, Kong Liu, Zhijie Wang, Zhanguo Wang, Shengchun Qu, Peng Jin. Spatioselective Growth on Homogenous Semiconductor Substrates by Surface State Modulation. Nano Letters 2021, 21 (14) , 5931-5937. https://doi.org/10.1021/acs.nanolett.1c00689
    2. Shaobo Zhang, Linwei Yu. 3D Radial Junctions for Robust and Flexible Optoelectronics. Advanced Optical Materials 2024, 12 (9) https://doi.org/10.1002/adom.202302121
    3. Yu-Chien Wei, Cheng-Hao Chu, Ming-Hua Mao, You-Ru Lin, Hao-Hsiung Lin. A new method for direct extraction of ambipolar diffusion length in a thin film by scanning photoluminescence microscopy. Japanese Journal of Applied Physics 2024, 63 (1) , 010906. https://doi.org/10.35848/1347-4065/ad18cd
    4. Ruqaiya Al-Abri, Hoyeon Choi, Patrick Parkinson. Measuring, controlling and exploiting heterogeneity in optoelectronic nanowires. Journal of Physics: Photonics 2021, 3 (2) , 022004. https://doi.org/10.1088/2515-7647/abe282
    5. Xinxin Li, Alexander C. Walhof, Weitao Dai, Ilke Arslan, Yuzi Liu, Fatima Toor, John P. Prineas. Enhanced radiative and thermal properties from surface encapsulation of InAs nanowires. Optical Materials Express 2021, 11 (3) , 719. https://doi.org/10.1364/OME.412956
    6. Kailing Zhang, Xinxin Li, Alexander C. Walhof, Yuzi Liu, Fatima Toor, John P. Prineas. Long interior carrier lifetime in selective-area InAs nanowires on silicon. Optical Materials Express 2020, 10 (10) , 2470. https://doi.org/10.1364/OME.403531
    7. Daotong You, Chunxiang Xu, Xiangxiang Wang, Jing Wang, Wenyue Su, Ru Wang, Tianlang Chen, Ru Wang, Zengliang Shi. A core@dual-shell nanorod array with a cascading band configuration for enhanced photocatalytic properties and anti-photocorrosion. Journal of Materials Chemistry A 2020, 8 (7) , 3726-3734. https://doi.org/10.1039/C9TA13028D

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