ACS Publications. Most Trusted. Most Cited. Most Read
My Activity
CONTENT TYPES

Figure 1Loading Img

Transient WORM Memory Device Using Biocompatible Protamine Sulfate with Very High Data Retention and Stability

  • Hritinava Banik
    Hritinava Banik
    Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022, Tripura India
  • Surajit Sarkar
    Surajit Sarkar
    Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022, Tripura India
  • Debajyoti Bhattacharjee
    Debajyoti Bhattacharjee
    Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022, Tripura India
  • , and 
  • Syed Arshad Hussain*
    Syed Arshad Hussain
    Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022, Tripura India
    *Phone: +919402122510. Fax: +913812374802. Email: [email protected], [email protected] (S.A.H.) ORCID Syed Arshad Hussain: 0000-0002-3298-6260 Hritinava Banik: 0000-0002-4825-7951 Surajit Sarkar: 0000-0003-0072-2129.
Cite this: ACS Appl. Electron. Mater. 2021, 3, 12, 5248–5256
Publication Date (Web):November 22, 2021
https://doi.org/10.1021/acsaelm.1c00750
Copyright © 2021 American Chemical Society

    Article Views

    421

    Altmetric

    -

    Citations

    LEARN ABOUT THESE METRICS
    Other access options
    Supporting Info (1)»

    Abstract

    Abstract Image

    Interest in biodegradable and transient electronics is gaining due to their potential use in green electronics, biomedical devices, and sustainable solutions for e-wastes. In this paper we employed Protamine Sulfate (PS) as the active layer to demonstrate biodegradable transient resistive memory devices. The Au/PS/ITO device exhibits nonvolatile resistive switching with write-once-read-many (WORM) memory behavior. The observed WORM memory performance was very good with high memory window (4.57× 103), data retention (experimentally >106 s, extrapolated >108 s), device yield (∼87.5%), read endurance (>3.6 × 104), and device stability (>210 days). Bias induced charge trapping followed by conducting filament formation was the key to such switching. The electronic as well as optical behavior completely disappeared after 8 min of dissolution of the device in aqueous solution. As a whole this work suggests that the PS based WORM memory device may be a potential candidate toward designing biodegradable transient memory devices.

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.

    Recommended

    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. You can change your affiliated institution below.

    Supporting Information

    ARTICLE SECTIONS
    Jump To

    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsaelm.1c00750.

    • Figure S1, stability of the device Au/PS/ITO; Figure S2, LRS values of the device with increasing temperature; Figure S3, thickness effect of Au/PS/ITO device; Figure S4, Schottky emission; and Figure S5, transient characteristics of the device by physical photograph and SEM images as a function of dilution time; Figure S6, device Au/PS/ITO configuration (PDF)

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    This article is cited by 10 publications.

    1. Anindya S. Manna, Mainak Saha, Somrita Mondal, Sk Masum Nawaz, Abhijit MalliK, Dilip K. Maiti. Amino Acid-Modified Wrinkled Graphene Oxide Nanofiber Embedded in PMMA for Long-Term Archival Memory Applications. ACS Applied Electronic Materials 2024, Article ASAP.
    2. Rahul Deb, Farhana Yasmin Rahman, Surajit Sarkar, Hritinava Banik, Pabitra Kumar Paul, Debajyoti Bhattacharjee, Khuloud A. Alibrahim, Abdullah N. Alodhayb, Syed Arshad Hussain. ZnO Nanoparticle-Induced Performance Enhancement of a Coumarin-Based Nonvolatile Memory Device. ACS Applied Engineering Materials 2024, Article ASAP.
    3. Emin Istif, Mohsin Ali, Elif Yaren Ozuaciksoz, Yagız Morova, Levent Beker. Near-Infrared Triggered Degradation for Transient Electronics. ACS Omega 2024, 9 (2) , 2528-2535. https://doi.org/10.1021/acsomega.3c07203
    4. Hritinava Banik, Surajit Sarkar, Debajyoti Bhattacharjee, Akshit Malhotra, Ashwini Chauhan, Syed Arshad Hussain. Noncytotoxic WORM Memory Using Lysozyme with Ultrahigh Stability for Transient and Sustainable Electronics Applications. ACS Omega 2024, 9 (1) , 618-627. https://doi.org/10.1021/acsomega.3c06229
    5. Farhana Yasmin Rahman, Rahul Deb, Surajit Sarkar, Hritinava Banik, Md. Jashim Uddin, Santanu Chakraborty, Debajyoti Bhattacharjee, Syed Arshad Hussain. Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications. ACS Applied Electronic Materials 2023, 5 (7) , 3685-3697. https://doi.org/10.1021/acsaelm.3c00425
    6. Do-Gwan Kim, Youngwoo Lee, Kuk Young Cho, Yong-Cheol Jeong. On-Demand Transient Paper Substrate for Selective Disposability of Thin-Film Electronic Devices. ACS Applied Materials & Interfaces 2023, 15 (27) , 32814-32823. https://doi.org/10.1021/acsami.3c03214
    7. Surajit Sarkar, Farhana Yasmin Rahman, Hritinava Banik, Swapan Majumdar, Debajyoti Bhattacharjee, Syed Arshad Hussain. Complementary Resistive Switching Behavior in Tetraindolyl Derivative-Based Memory Devices. Langmuir 2022, 38 (30) , 9229-9238. https://doi.org/10.1021/acs.langmuir.2c01011
    8. Mainak Saha, Subham Dey, Abhijit Mallik. A Bio-Material Based Write-Once-Read-Many Times Memory Using Sodium Caseinate and Polyvinylpyrrolidone Blend. 2022, 111-114. https://doi.org/10.1109/EDKCON56221.2022.10032847
    9. Farhana Yasmin Rahman, Surajit Sarkar, Hritinava Banik, Md. Jashim Uddin, Debajyoti Bhattacharjee, Syed Arshad Hussain. Investigation of non volatile resistive switching behaviour using rose petal. Materials Today: Proceedings 2022, 65 , 2693-2697. https://doi.org/10.1016/j.matpr.2022.05.341
    10. Hritinava Banik, Surajit Sarkar, Farhana Yasmin Rahman, Hemen Kalita, Debajyoti Bhattacharjee, Syed Arshad Hussain. RRAM and WORM memory devices using Protamine Sulfate and Graphene Oxide. Materials Today: Proceedings 2022, 65 , 2773-2777. https://doi.org/10.1016/j.matpr.2022.06.201

    Pair your accounts.

    Export articles to Mendeley

    Get article recommendations from ACS based on references in your Mendeley library.

    Pair your accounts.

    Export articles to Mendeley

    Get article recommendations from ACS based on references in your Mendeley library.

    You’ve supercharged your research process with ACS and Mendeley!

    STEP 1:
    Click to create an ACS ID

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    MENDELEY PAIRING EXPIRED
    Your Mendeley pairing has expired. Please reconnect