Transient WORM Memory Device Using Biocompatible Protamine Sulfate with Very High Data Retention and Stability
- Hritinava BanikHritinava BanikThin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022, Tripura IndiaMore by Hritinava Banik
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- Surajit SarkarSurajit SarkarThin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022, Tripura IndiaMore by Surajit Sarkar
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- Debajyoti BhattacharjeeDebajyoti BhattacharjeeThin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022, Tripura IndiaMore by Debajyoti Bhattacharjee
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- Syed Arshad Hussain*Syed Arshad Hussain*Phone: +919402122510. Fax: +913812374802. Email: [email protected], [email protected] (S.A.H.) ORCID Syed Arshad Hussain: 0000-0002-3298-6260 Hritinava Banik: 0000-0002-4825-7951 Surajit Sarkar: 0000-0003-0072-2129.Thin Film and Nanoscience Laboratory, Department of Physics, Tripura University Suryamaninagar 799022, Tripura IndiaMore by Syed Arshad Hussain
Abstract
Interest in biodegradable and transient electronics is gaining due to their potential use in green electronics, biomedical devices, and sustainable solutions for e-wastes. In this paper we employed Protamine Sulfate (PS) as the active layer to demonstrate biodegradable transient resistive memory devices. The Au/PS/ITO device exhibits nonvolatile resistive switching with write-once-read-many (WORM) memory behavior. The observed WORM memory performance was very good with high memory window (4.57× 103), data retention (experimentally >106 s, extrapolated >108 s), device yield (∼87.5%), read endurance (>3.6 × 104), and device stability (>210 days). Bias induced charge trapping followed by conducting filament formation was the key to such switching. The electronic as well as optical behavior completely disappeared after 8 min of dissolution of the device in aqueous solution. As a whole this work suggests that the PS based WORM memory device may be a potential candidate toward designing biodegradable transient memory devices.
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