ACS Publications. Most Trusted. Most Cited. Most Read

OR SEARCH CITATIONS

My Activity
Publications
CONTENT TYPES

Figure 1Loading Img
Download Hi-Res ImageDownload to MS-PowerPointCite This:ACS Appl. Mater. Interfaces 2020, 12, 25, 28894-28902
RETURN TO ISSUEPREVSurfaces, Interfaces...Surfaces, Interfaces, and ApplicationsNEXT

Macroscopic Versus Microscopic Schottky Barrier Determination at (Au/Pt)/Ge(100): Interfacial Local Modulation

  • Andrea Gerbi*
    Andrea Gerbi
    Innovative Materials and Devices, CNR-SPIN Institute for Superconductors, Corso Perrone 24, I-16152 Genova, Italy
    *Email: [email protected]
    More by Andrea Gerbi
    Orcidhttp://orcid.org/0000-0002-7323-2908
  • , 
  • Renato Buzio
    Renato Buzio
    Innovative Materials and Devices, CNR-SPIN Institute for Superconductors, Corso Perrone 24, I-16152 Genova, Italy
    More by Renato Buzio
    Orcidhttp://orcid.org/0000-0001-5632-5531
  • , 
  • Cesar González
    Cesar González
    Física Teórica de la Materia Condensada-IFIMAC, Universidad Autonoma de Madrid, E-28049 Madrid, Spain
    More by Cesar González
  • , 
  • Nicola Manca
    Nicola Manca
    Innovative Materials and Devices, CNR-SPIN Institute for Superconductors, Corso Perrone 24, I-16152 Genova, Italy
    Dipartimento di Fisica, Universita degli Studi di Genova, via Dodecaneso 33, 16146 Genova, Italy
    More by Nicola Manca
    Orcidhttp://orcid.org/0000-0002-7768-2500
  • , 
  • Daniele Marrè
    Daniele Marrè
    Innovative Materials and Devices, CNR-SPIN Institute for Superconductors, Corso Perrone 24, I-16152 Genova, Italy
    Dipartimento di Fisica, Universita degli Studi di Genova, via Dodecaneso 33, 16146 Genova, Italy
    More by Daniele Marrè
  • , 
  • Sergio Marras
    Sergio Marras
    Materials Characterization Facility, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy
    More by Sergio Marras
  • , 
  • Mirko Prato
    Mirko Prato
    Materials Characterization Facility, Istituto Italiano di Tecnologia, Via Morego 30, I-16163 Genova, Italy
    More by Mirko Prato
    Orcidhttp://orcid.org/0000-0002-2188-8059
  • , 
  • Lloyd Bell
    Lloyd Bell
    Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91104, United States
    More by Lloyd Bell
  • , 
  • Sergio Di Matteo
    Sergio Di Matteo
    University Rennes, CNRS, IPR (Institut de Physique de Rennes)—UMR 6251, F-35000 Rennes, France
    More by Sergio Di Matteo
    Orcidhttp://orcid.org/0000-0001-5746-0057
  • , 
  • Fernando Flores
    Fernando Flores
    Física Teórica de la Materia Condensada-IFIMAC, Universidad Autonoma de Madrid, E-28049 Madrid, Spain
    More by Fernando Flores
    Orcidhttp://orcid.org/0000-0003-1682-957X
  • , and 
  • Pedro L. de Andres
    Pedro L. de Andres
    Instituto de Ciencia de Materiales de Madrid-CSIC, Cantoblanco, E-28049 Madrid, Spain
    More by Pedro L. de Andres
    Orcidhttp://orcid.org/0000-0002-9012-2890
Cite this: ACS Appl. Mater. Interfaces 2020, 12, 25, 28894–28902
Publication Date (Web):June 1, 2020
https://doi.org/10.1021/acsami.0c07252
Copyright © 2020 American Chemical Society
Request reuse permissions

    Article Views

    266

    Altmetric

    -

    Citations

    4
    LEARN ABOUT THESE METRICS
    Read OnlinePDF (3 MB)
    Get e-Alerts
    Supporting Info (1)»
    SUBJECTS:

    Abstract

    Abstract Image

    Macroscopic current–voltage measurements and nanoscopic ballistic electron emission spectroscopy (BEES) have been used to probe the Schottky barrier height (SBH) at metal/Ge(100) junctions for two metal electrodes (Au and Pt) and different metallization methods, specifically, thermal-vapor and laser-vapor deposition. Analysis of macroscopic current–voltage characteristics indicates that a SBH of 0.61–0.63 eV controls rectification at room temperature. On the other hand, BEES measured at 80 K reveals the coexistence of two distinct barriers at the nanoscale, taking values in the ranges 0.61–0.64 and 0.70–0.74 eV for the cases studied. For each metal–semiconductor junction, the macroscopic measurement agrees well with the lower barrier found with BEES. Ab initio modeling of BEES spectra ascribes the two barriers to two different atomic registries between the metals and the Ge(100) surface, a significant relevant insight for next-generation highly miniaturized Ge-based devices.

    KEYWORDS:

    Supporting Information

    ARTICLE SECTIONS
    Jump To

    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.0c07252.

    • XPS and XRD characterization of interfaces and atomic force microscopy (AFM) on Ge(100) substrate; Ohmic back-contact and I–V versus T characteristics; theoretical modeling of interfaces; XPS spectra; θ–2θ scans for Au/Ge(100) and Pt/Ge(100); rocking curve for Au(220) and Ge(400) peaks; ϕ-scans for G(400), Au(111), Au(200), and Au(220) peaks; I–V curves for Ohmic back-contact; I–V macroscopic characteristics; effect of different theoretical thresholds on BEEM ab initio I–Vs; schematic representations for interfaces M(001)/Ge(001) and M(111)/Ge(001); DOS for two model interfaces used to obtain interface dipoles; and summary of different parameters determined from ab initio optimization of model interfaces (PDF)

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    This article is cited by 4 publications.

    1. Zhaofeng Yang, Zhenzhu Cao, Aziz U. Rehman, Jucai Yang. Structural Evolution, Electronic Structures, and Vibrational Properties of Anionic LuGen (n = 5–17) Clusters: From Lu-Linked to Lu-Encapsulated Configurations. Inorganic Chemistry 2021, 60 (18) , 14446-14456. https://doi.org/10.1021/acs.inorgchem.1c02247
    2. Andrea Gerbi, Renato Buzio, Cesar González, Fernando Flores, Pedro L. de Andres. Phase-space ab-initio direct and reverse ballistic-electron emission spectroscopy: Schottky barriers determination for Au/Ge(100). Applied Surface Science 2023, 609 , 155218. https://doi.org/10.1016/j.apsusc.2022.155218
    3. Zhaofeng Yang, Aziz U. Rehman, Zhenzhu Cao, Jucai Yang. Structural evolution, photoelectron spectra and vibrational properties of anionic GdGe n − ( n = 5–18) nanoalloy clusters: a DFT insight. RSC Advances 2022, 12 (34) , 22020-22030. https://doi.org/10.1039/D2RA04037A
    4. Bin Liu, Xin Wang, Jucai Yang. Comparative research of configuration, stability and electronic properties of cationic and neutral [AuGe ] and [Ge+1]λ (n=1-13, λ=0, +1) nanoalloy clusters. Materials Today Communications 2021, 26 , 101989. https://doi.org/10.1016/j.mtcomm.2020.101989
    Download PDF

    Pair your accounts.

    Export articles to Mendeley

    Get article recommendations from ACS based on references in your Mendeley library.

    Pair your accounts.

    Export articles to Mendeley

    Get article recommendations from ACS based on references in your Mendeley library.

    You’ve supercharged your research process with ACS and Mendeley!

    STEP 1:
    Click to create an ACS ID

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    MENDELEY PAIRING EXPIRED
    Your Mendeley pairing has expired. Please reconnect