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Hierarchical CdS Nanowires Based Rigid and Flexible Photodetectors with Ultrahigh Sensitivity

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State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
*G. Shen. E-mail: [email protected].
Cite this: ACS Appl. Mater. Interfaces 2015, 7, 42, 23507-23514
Publication Date (Web):October 6, 2015
https://doi.org/10.1021/acsami.5b06070
Copyright © 2015 American Chemical Society
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Abstract

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Hierarchical CdS nanowires were synthesized via a facile vapor transport method, which were used to fabricate both rigid and flexible visible-light photodetectors. Studies found that the rigid photodetectors on SiO2/Si substrate showed ultrahigh photo-dark current ratio up to 1.96 × 104, several orders of magnitude higher than previously reported CdS nanostructures, as well as high specific detectivity (4.27 × 1012 Jones), fast response speed and excellent environmental stability. Highly flexible photodetectors were also fabricated on polyimide substrate, which exhibited comparable photoresponse performance as the rigid one. In addition, the as-prepared flexible devices displayed excellent mechanical flexibility, electrical stability and folding endurance. The results indicate that the hierarchical CdS nanowires may be good candidates for nanoscale optoelectronic devices such as high-efficiency photoswitches and highly photosensitive detectors.

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The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.5b06070.

  • I–V plots of the photodetector based on CdS nanowire (without branches) in the dark and under 470 nm light illumination with a light intensity of 0.934 mW/cm2; I–V plots of the device in air and vacuum (0.1 Pa) without light illumination (PDF).

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