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    Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode
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    † ‡ †Department of Physics, ‡Nanoscale Research Facility, and ⊥Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, New Delhi 110016, India
    § Department of Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India
    *E-mail: [email protected]
    *E-mail: [email protected]
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2016, 8, 12, 8213–8223
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    https://doi.org/10.1021/acsami.5b12393
    Published March 10, 2016
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    Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky–Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene–GaN Schottky diodes may have the underlying trend for replacing metal–GaN Schottky diodes.

    Copyright © 2016 American Chemical Society

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    • Electrostatic calculations of Fermi level shifts in graphene due to graphene–GaN and graphene–Au interactions

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    Cite this: ACS Appl. Mater. Interfaces 2016, 8, 12, 8213–8223
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.5b12393
    Published March 10, 2016
    Copyright © 2016 American Chemical Society
    Request reuse permissions

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