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Controllable Threshold Voltage in Organic Complementary Logic Circuits with an Electron-Trapping Polymer and Photoactive Gate Dielectric Layer

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Faculty of Electrical-Electronic Engineering, University of Transport and Communications, No. 3, Cau Giay Street, Dong Da, Hanoi Vietnam
Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan
§ Division of Applied Chemistry, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
# Department of Chemistry and Nano Science, Ewha Womans University, Seoul 120-750, Korea
Faculty of Science and Technology, Meijo University, SENTAN, Japan Science and Technology Agency (JST), Nagoya, Aichi 468-8502, Japan
Cite this: ACS Appl. Mater. Interfaces 2016, 8, 28, 18249–18255
Publication Date (Web):June 27, 2016
https://doi.org/10.1021/acsami.6b03183
Copyright © 2016 American Chemical Society

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    Abstract

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    We present controllable and reliable complementary organic transistor circuits on a PET substrate using a photoactive dielectric layer of 6-[4′-(N,N-diphenylamino)phenyl]-3-ethoxycarbonylcoumarin (DPA-CM) doped into poly(methyl methacrylate) (PMMA) and an electron-trapping layer of poly(perfluoroalkenyl vinyl ether) (Cytop). Cu was used for a source/drain electrode in both the p-channel and n-channel transistors. The threshold voltage of the transistors and the inverting voltage of the circuits were reversibly controlled over a wide range under a program voltage of less than 10 V and under UV light irradiation. At a program voltage of −2 V, the inverting voltage of the circuits was tuned to be at nearly half of the supply voltage of the circuit. Consequently, an excellent balance between the high and low noise margins (NM) was produced (64% of NMH and 68% of NML), resulting in maximum noise immunity. Furthermore, the programmed circuits showed high stability, such as a retention time of over 105 s for the inverter switching voltage. Our findings bring about a flexible, simple way to obtain robust, high-performance organic circuits using a controllable complementary transistor inverter.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.6b03183.

    • Gate current (IG) of pOTFT or nOTFT measured together with transfer characteristic measurements, transfer curves of pOTFT and nOTFT devices, device structure and current–voltage measurement of the ITO/PMMA:DPA-CM/Au photoactive dielectric film, transfer curves, Vth shift of pOTFT and nOTFT as a function of UV light intensity, change in Vth of pOTFT or nOTFT as a function of applied time, VTC behaviors of the circuit after erasing, changes of VM of circuit as a function of VPG voltage, and illustrations of VTC measurements (PDF)

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    Cited By

    This article is cited by 11 publications.

    1. Yina Moon, Yeon-Ju Kim, Dongseong Yang, Nara Han, Minwoo Lee, Dong-Yu Kim. Corona Poling Induced Phase Transition to Highly Polar Phase in P(VDF-TrFE-CFE) Dielectric and Charge Transport of Organic Field-Effect Transistors. ACS Applied Materials & Interfaces 2023, 15 (24) , 29568-29576. https://doi.org/10.1021/acsami.3c04435
    2. Koki Taguchi, Takafumi Uemura, Andreas Petritz, Naoko Namba, Mihoko Akiyama, Masahiro Sugiyama, Teppei Araki, Barbara Stadlober, Tsuyoshi Sekitani. Fine-Tuning the Performance of Ultraflexible Organic Complementary Circuits on a Single Substrate via a Nanoscale Interfacial Photochemical Reaction. ACS Applied Electronic Materials 2022, 4 (12) , 6308-6321. https://doi.org/10.1021/acsaelm.2c01444
    3. Huchao Li, Dechao Geng, Yong Lei, Fei Jiao, Liqiang Li, Deyang Ji, Wenping Hu. Recent Progress in Fluorinated Dielectric‐Based Organic Field‐Effect Transistors and Applications. Advanced Sensor Research 2023, 2 (10) https://doi.org/10.1002/adsr.202300034
    4. Koki Taguchi, Takafumi Uemura, Naoko Namba, Andreas Petritz, Teppei Araki, Masahiro Sugiyama, Barbara Stadlober, Tsuyoshi Sekitani. Heterogeneous Functional Dielectric Patterns for Charge‐Carrier Modulation in Ultraflexible Organic Integrated Circuits. Advanced Materials 2021, 33 (45) https://doi.org/10.1002/adma.202104446
    5. Erjuan Guo, Shen Xing, Felix Dollinger, René Hübner, Shu-Jen Wang, Zhongbin Wu, Karl Leo, Hans Kleemann. Integrated complementary inverters and ring oscillators based on vertical-channel dual-base organic thin-film transistors. Nature Electronics 2021, 4 (8) , 588-594. https://doi.org/10.1038/s41928-021-00613-w
    6. Debdatta Panigrahi, Ryoma Hayakawa, Kota Fuchii, Yoichi Yamada, Yutaka Wakayama. Optically Controlled Ternary Logic Circuits Based on Organic Antiambipolar Transistors. Advanced Electronic Materials 2021, 7 (1) https://doi.org/10.1002/aelm.202000940
    7. Tim Leydecker, Zhiming M. Wang, Fabrizio Torricelli, Emanuele Orgiu. Organic-based inverters: basic concepts, materials, novel architectures and applications. Chemical Society Reviews 2020, 49 (21) , 7627-7670. https://doi.org/10.1039/D0CS00106F
    8. Jiao Wang, Qingqing Zhang, Dandan Hu, Tianyu Zhan, Zhiyong Guo, Sui Wang, Yufang Hu. Reprogrammable fluorescence logic sensing for biomolecules via RNA-like coenzyme A-based coordination polymer. Biosensors and Bioelectronics 2020, 165 , 112405. https://doi.org/10.1016/j.bios.2020.112405
    9. Toan Thanh Dao, Heisuke Sakai, Kei Ohkubo, Shunichi Fukuzumi, Hideyuki Murata. Low switching voltage, high-stability organic phototransistor memory based on a photoactive dielectric and an electron trapping layer. Organic Electronics 2020, 77 , 105505. https://doi.org/10.1016/j.orgel.2019.105505
    10. Hajime Takahashi, Masatoshi Kitamura, Yoshiaki Hattori, Yoshinari Kimura. A ring oscillator consisting of pentacene thin-film transistors with controlled threshold voltages. Japanese Journal of Applied Physics 2019, 58 (SB) , SBBJ04. https://doi.org/10.7567/1347-4065/ab01d3
    11. Yasuyuki ABE, Heisuke SAKAI, Toan Thanh DAO, Hideyuki MURATA. Control of Threshold Voltage and Low-Voltage Operation in Organic Field Effect Transistor. IEICE Transactions on Electronics 2019, E102.C (2) , 184-187. https://doi.org/10.1587/transele.2018OMS0012

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