ACS Publications. Most Trusted. Most Cited. Most Read
My Activity

Figure 1Loading Img

Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells

  • Ah-Jin Cho
    Ah-Jin Cho
    School of Integrated Technology, Yonsei University, Incheon 21983, South Korea
    Yonsei Institute of Convergence Technology, Incheon 21983, South Korea
    More by Ah-Jin Cho
  •  and 
  • Jang-Yeon Kwon*
    Jang-Yeon Kwon
    School of Integrated Technology, Yonsei University, Incheon 21983, South Korea
    Yonsei Institute of Convergence Technology, Incheon 21983, South Korea
    *E-mail: [email protected]
Cite this: ACS Appl. Mater. Interfaces 2019, 11, 43, 39765–39771
Publication Date (Web):October 2, 2019
Copyright © 2019 American Chemical Society

    Article Views





    Other access options
    Supporting Info (1)»


    Abstract Image

    Two-dimensional (2D) semiconductors can be promising active materials for solar cells due to their advantageous electrical and optical properties, in addition to their ability to form high-quality van der Waals (vdW) heterojunctions using a simple process. Furthermore, the atomically thin nature of these 2D materials allows them to form lightweight and transparent thin-film solar cells. However, strategies appropriate for optimizing their properties have not been extensively studied yet. In this paper, we propose a method for reducing the electrical loss of 2D vdW solar cells by introducing hexagonal boron nitride (h-BN) as a surface passivation layer. This method allowed us to enhance the photovoltaic performance of a MoS2/WSe2 solar cell. In particular, we observed ∼74% improvement of the power conversion efficiency owing to a large increase in both short-circuit current and open-circuit voltage. Such a remarkable performance enhancement was due to the reduction of the recombination rate at the junction and surface of nonoverlapped semiconductor regions, which was confirmed via a time-resolved photoluminescence analysis. Furthermore, the h-BN top layer was found to improve the long-term stability of the tested 2D solar cell under ambient conditions. We observed the evolution of our MoS2/WSe2 solar cell for a month and found that h-BN passivation effectively suppressed its degradation speed. In particular, the degradation speed of the passivated cell was twice as low as that of a nonpassivated cell. This work reveals that h-BN can successfully suppress the electrical loss and degradation of 2D vdW heterojunction solar cells under ambient conditions.

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.


    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. You can change your affiliated institution below.

    Supporting Information

    Jump To

    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.9b11219.

    • STEM cross-sectional image of a MoS2/WSe2/h-BN heterostructure; plots of parameter variation ratio after h-BN passivation; optical microscope and TRPL images of the tested MoS2/WSe2 heterostructure; schematic images describing the mechanism of the carrier recombination suppression by h-BN passivation; evolution of VOC and FF recorded during 30 days from the MoS2/WSe2 solar cell without and with the h-BN passivation layer stored under ambient conditions (PDF)

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system:

    Cited By

    This article is cited by 43 publications.

    1. Jung Ho Kim, Jubok Lee, Changwon Seo, Gang Hee Han, Byeong Wook Cho, Jeongyong Kim, Young Hee Lee, Hyun Seok Lee. Polymer-Waveguide-Integrated 2D Semiconductor Heterostructures for Optical Communications. Nano Letters 2023, 23 (23) , 11019-11025.
    2. Zhanjie Lu, Meijie Zhu, Yifan Liu, Gehui Zhang, Zuoquan Tan, Xiaotian Li, Shuaishuai Xu, Le Wang, Ruifen Dou, Bin Wang, Yuan Yao, Zhiyong Zhang, Jichen Dong, Zhihai Cheng, Shanshan Chen. Low-Temperature Synthesis of Boron Nitride as a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices. ACS Applied Materials & Interfaces 2022, 14 (22) , 25984-25992.
    3. Kazi M. Islam, Timothy Ismael, Claire Luthy, Orhan Kizilkaya, Matthew D. Escarra. Large-Area, High-Specific-Power Schottky-Junction Photovoltaics from CVD-Grown Monolayer MoS2. ACS Applied Materials & Interfaces 2022, 14 (21) , 24281-24289.
    4. Yunjeong Hwang, Taehun Kim, Naechul Shin. Interlayer Energy Transfer and Photoluminescence Quenching in MoSe2/Graphene van der Waals Heterostructures for Optoelectronic Devices. ACS Applied Nano Materials 2021, 4 (11) , 12034-12042.
    5. Imdad Hussain, Saif Ullah, Adnan Ali Khan, Rashid Ahmad, Iftikhar Ahmad. Two-dimensional III-nitrides: A comprehensive DFT and thermodynamics studies. Computational Condensed Matter 2024, 39 , e00898.
    6. Pekka Laukkanen, Marko Punkkinen, Mikhail Kuzmin, Kalevi Kokko, Xiaolong Liu, Behrad Radfar, Ville Vähänissi, Hele Savin, Antti Tukiainen, Teemu Hakkarainen, Jukka Viheriälä, Mircea Guina. Bridging the gap between surface physics and photonics. Reports on Progress in Physics 2024, 87 (4) , 044501.
    7. Zhi Zeng, Dong-Bo Wang, Xuan Fang, Jia-Mu Cao, Bing-Ke Zhang, Jing-Wen Pan, Dong-Hao Liu, Si-Hang Liu, Shu-Jie Jiao, Tian-Yuan Chen, Gang Liu, Lian-Cheng Zhao, Jin-Zhong Wang. Review of 2D Bi2X3 (X = S, Se, Te): from preparation to photodetector. Rare Metals 2024, 306
    8. Imdad Hussain, Adnan Ali Khan, Iftikhar Ahmad, Rashid Ahmad, Saif Ullah. Systematic surface bowing in 2D III-nitride monolayers. RSC Advances 2024, 14 (13) , 8896-8904.
    9. Join Uddin, Raksha Dubey, Vinaayak Sivam Balasubramaniam, Jeff Kabel, Vedika Khare, Zohreh Salimi, Sambhawana Sharma, Dongyan Zhang, Yoke Khin Yap. Progress in Electronic, Energy, Biomedical and Environmental Applications of Boron Nitride and MoS2 Nanostructures. Micromachines 2024, 15 (3) , 349.
    10. Kulwinder Singh, Sawini, Anup Thakur, Akshay Kumar. Boron Nitride and Its Hybrids: Synthesis, Properties and Potential Applications. 2024, 1-29.
    11. Xiaoqiang Feng, Ruiqing Cheng, Lei Yin, Yao Wen, Jian Jiang, Jun He. Two‐Dimensional Oxide Crystals for Device Applications: Challenges and Opportunities. Advanced Materials 2024, 36 (2)
    12. Po-Cheng Tsai, Chun-Wei Huang, Shoou-Jinn Chang, Shu-Wei Chang, Shih-Yen Lin. In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers. Scientific Reports 2023, 13 (1)
    13. Dandan Sun, Zhipeng Sun, Dehong Yang, Xiangfen Jiang, Jie Tang, Xuebin Wang. Advances in boron nitride‐based materials for electrochemical energy storage and conversion. EcoEnergy 2023, 1 (2) , 375-404.
    14. Wenjia Wang, Yurun Sun, Pan Dai, Honglei Gao, Changhui Du, Kuilong Li. Optical anisotropy and polarization selectivity in MoS2/Ta2NiSe5 van der Waals heterostructures. Applied Physics Letters 2023, 122 (23)
    15. Abhijit Biswas, Rishi Maiti, Frank Lee, Cecilia Y. Chen, Tao Li, Anand B. Puthirath, Sathvik Ajay Iyengar, Chenxi Li, Xiang Zhang, Harikishan Kannan, Tia Gray, Md Abid Shahriar Rahman Saadi, Jacob Elkins, A. Glen Birdwell, Mahesh R. Neupane, Pankaj B. Shah, Dmitry A. Ruzmetov, Tony G. Ivanov, Robert Vajtai, Yuji Zhao, Alexander L. Gaeta, Manoj Tripathi, Alan Dalton, Pulickel M. Ajayan. Unravelling the room temperature growth of two-dimensional h-BN nanosheets for multifunctional applications. Nanoscale Horizons 2023, 8 (5) , 641-651.
    16. Anhan Liu, Xueyang Peng, Songang Peng, He Tian. Dielectrics for 2-D Electronics: From Device to Circuit Applications. IEEE Transactions on Electron Devices 2023, 70 (4) , 1474-1498.
    17. Malik Abdul Rehman, Minjae Kim, Sachin A. Pawar, Sewon Park, Naila Nasir, Dong-eun Kim, Muhammad Farooq Khan, Van Huy Nguyen, Akendra Singh Chabungbam, Yongho Seo, Takeaki Sakurai, Seung-Hyun Chun, Do Hyoung Koo, Chul-Ho Lee, Seong Chan Jun, Hyung-Ho Park, . A Simple Method to Produce an Aluminum Oxide-Passivated Tungsten Diselenide/n-Type Si Heterojunction Solar Cell with High Power Conversion Efficiency. International Journal of Energy Research 2023, 2023 , 1-11.
    18. Tanushree H. Choudhury, Benjamin Huet, Xiaotian Zhang, Anushka Bansal, Joan M. Redwing. Scalable synthesis of 2D materials. 2023, 1-54.
    19. Guo-Xiang Chen, Rui-Yun Du, Dou-Dou Wang, Zhe Chen, Shuai Liu, Jian-Min Zhang. Adsorption of NO gas molecule on the vacancy defected and transition metal doped antimonene: A first-principles study. Vacuum 2023, 207 , 111654.
    20. Zheng Zhang, Yue Zhang. The 2D Semiconductor Library. 2022, 1-31.
    21. Luhang Song, Moru Song, Zongyu Lu, Gang Yu, Zhan Liang, Wei Hou, Qingwei Liao, Yujun Song. Recent Advances of Preparation and Application of Two-Dimension van der Waals Heterostructure. Coatings 2022, 12 (8) , 1152.
    22. Mingyue Zhao, Yurui Hao, Chen Zhang, Rongli Zhai, Benqing Liu, Wencheng Liu, Cong Wang, Syed Hassan Mujtaba Jafri, Aamir Razaq, Raffaello Papadakis, Jiangwei Liu, Xiaoling Ye, Xiaoxiao Zheng, Hu Li. Advances in Two-Dimensional Materials for Optoelectronics Applications. Crystals 2022, 12 (8) , 1087.
    23. Mengna Li, Gordon Huang, Xiujuan Chen, Jianan Yin, Peng Zhang, Yao Yao, Jian Shen, Yuwei Wu, Jing Huang. Perspectives on environmental applications of hexagonal boron nitride nanomaterials. Nano Today 2022, 44 , 101486.
    24. Sai Wang, Guojun Huang, Yuecai Xu, Han Luo, Haiyuan Cao, Hua Chu, Jing Tan, Yimin Lu. Middle-infrared optical analysis of BN thin films synthesised by pulsed laser deposition from experimental and theoretical calculations insights. Ceramics International 2022, 48 (8) , 11812-11819.
    25. Asif Hayat, Muhammad Sohail, Mohamed S. Hamdy, T.A. Taha, Huda Salem AlSalem, Asma M. Alenad, Mohammed A. Amin, Rahim Shah, Arkom Palamanit, Javid Khan, W.I. Nawawi, Sunil Kumar Baburao Mane. Fabrication, characteristics, and applications of boron nitride and their composite nanomaterials. Surfaces and Interfaces 2022, 29 , 101725.
    26. Shayan Angizi, Sayed Ali Ahmad Alem, Amir Pakdel. Towards Integration of Two-Dimensional Hexagonal Boron Nitride (2D h-BN) in Energy Conversion and Storage Devices. Energies 2022, 15 (3) , 1162.
    27. Amreen A. Hussain, Amit K. Rana. Emerging 2D Nanomaterial Composites for Efficient Energy Conversion: Insight into the Evolutionary Perspective of Devices. 2022, 25-46.
    28. Fayaz Ali. Boron materials for energy applications. 2022, 203-289.
    29. Junqiang Yang, Xiaochi Liu, Qianli Dong, Yaqi Shen, Yuchuan Pan, Zhongwang Wang, Kui Tang, Xianfu Dai, Rongqi Wu, Yuanyuan Jin, Wei Zhou, Song Liu, Jian Sun. Oxidations of two-dimensional semiconductors: Fundamentals and applications. Chinese Chemical Letters 2022, 33 (1) , 177-185.
    30. L.S. Huang, H.P. Liang, H.M. Dong, Y.F. Duan, F. Huang. Electrically-tuned transition of band alignment in arsenene/MoTe 2 van der Waals heterostructures. Vacuum 2021, 194 , 110612.
    31. Vidur Raj, Dipankar Chugh, Lachlan E. Black, M. M. Shehata, Li Li, Felipe Kremer, Daniel H. Macdonald, Hark Hoe Tan, Chennupati Jagadish. Passivation of InP solar cells using large area hexagonal-BN layers. npj 2D Materials and Applications 2021, 5 (1)
    32. Shrabani De, Sourav Acharya, Sumanta Sahoo, Ashok Kumar Das, Ganesh Chandra Nayak. 2D Materials for Solar Cell Applications. 2021, 227-267.
    33. Camille Maestre, Bérangère Toury, Philippe Steyer, Vincent Garnier, Catherine Journet. Hexagonal boron nitride: a review on selfstanding crystals synthesis towards 2D nanosheets. Journal of Physics: Materials 2021, 4 (4) , 044018.
    34. Gun-Hee Lee, Tran-Viet Cuong, Dong-Kyu Yeo, Hyunjin Cho, Beo-Deul Ryu, Eun-Mi Kim, Tae-Sik Nam, Eun-Kyung Suh, Tae-Hoon Seo, Chang-Hee Hong. Hexagonal Boron Nitride Passivation Layer for Improving the Performance and Reliability of InGaN/GaN Light-Emitting Diodes. Applied Sciences 2021, 11 (19) , 9321.
    35. Wenliang Wang, Hongsheng Jiang, Linhao Li, Guoqiang Li. Two-dimensional group-III nitrides and devices: a critical review. Reports on Progress in Physics 2021, 84 (8) , 086501.
    36. Jianwei Ben, Xinke Liu, Cong Wang, Yupeng Zhang, Zhiming Shi, Yuping Jia, Shanli Zhang, Han Zhang, Wenjie Yu, Dabing Li, Xiaojuan Sun. 2D III‐Nitride Materials: Properties, Growth, and Applications. Advanced Materials 2021, 33 (27)
    37. Xiangmin Hu, Cuicui Qiu, Dameng Liu. Rapid thin-layer WS2 detection based on monochromatic illumination photographs. Nano Research 2021, 14 (3) , 840-845.
    38. Jia Zhang, Biying Tan, Xin Zhang, Feng Gao, Yunxia Hu, Lifeng Wang, Xiaoming Duan, Zhihua Yang, PingAn Hu. Atomically Thin Hexagonal Boron Nitride and Its Heterostructures. Advanced Materials 2021, 33 (6)
    39. Wanjun Wang, Wenquan Gu, Guiying Li, Haojing Xie, Po Keung Wong, Taicheng An. Few-layered tungsten selenide as a co-catalyst for visible-light-driven photocatalytic production of hydrogen peroxide for bacterial inactivation. Environmental Science: Nano 2020, 7 (12) , 3877-3887.
    40. D. Gonzalez-Ortiz, C. Salameh, M. Bechelany, P. Miele. Nanostructured boron nitride–based materials: synthesis and applications. Materials Today Advances 2020, 8 , 100107.
    41. Yujin Han, Hyeuk Jin Han, Yoonhyuk Rah, Cheolgyu Kim, Moohyum Kim, Hunhee Lim, Kwang Ho Ahn, Hanhwi Jang, Kyoungsik Yu, Taek‐Soo Kim, Eugene N. Cho, Yeon Sik Jung. Desolvation‐Triggered Versatile Transfer‐Printing of Pure BN Films with Thermal–Optical Dual Functionality. Advanced Materials 2020, 32 (38)
    42. Tariq Munir, Muhammad Kashif, Aamir Shahzad, Nadeem Nasir, Muhammad Imran, Nabeel Anjum, Arslan Mahmood. State‐of‐the‐Art and Perspective of Layered Materials. 2020, 363-377.
    43. Hewen Wang, Wenwei Luo, Musheng Wu, Chuying Ouyang. The effect of strain on the Li-storage performance of V2C and Nb2C: From first-principles study. Solid State Communications 2020, 311 , 113857.

    Pair your accounts.

    Export articles to Mendeley

    Get article recommendations from ACS based on references in your Mendeley library.

    Pair your accounts.

    Export articles to Mendeley

    Get article recommendations from ACS based on references in your Mendeley library.

    You’ve supercharged your research process with ACS and Mendeley!

    STEP 1:
    Click to create an ACS ID

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Please note: If you switch to a different device, you may be asked to login again with only your ACS ID.

    Your Mendeley pairing has expired. Please reconnect