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Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory

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    Research Article

    Tailored 2D/3D Halide Perovskite Heterointerface for Substantially Enhanced Endurance in Conducting Bridge Resistive Switching Memory
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    • SangMyeong Lee
      SangMyeong Lee
      School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
      More by SangMyeong Lee
    • Hyojung Kim
      Hyojung Kim
      Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
      More by Hyojung Kim
    • Dong Hoe Kim
      Dong Hoe Kim
      Department of Nanotechnology & Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
      More by Dong Hoe Kim
    • Won Bin Kim
      Won Bin Kim
      School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
      More by Won Bin Kim
    • Jae Myeong Lee
      Jae Myeong Lee
      School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
      More by Jae Myeong Lee
    • Jaeho Choi
      Jaeho Choi
      Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
      More by Jaeho Choi
    • Hyunjung Shin
      Hyunjung Shin
      Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
      More by Hyunjung Shin
      Orcidhttp://orcid.org/0000-0003-1284-9098
    • Gill Sang Han*
      Gill Sang Han
      School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
      *Email: [email protected]
      More by Gill Sang Han
      Orcidhttp://orcid.org/0000-0002-3974-2138
    • Ho Won Jang*
      Ho Won Jang
      Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
      *Email: [email protected]
      More by Ho Won Jang
      Orcidhttp://orcid.org/0000-0002-6952-7359
    • Hyun Suk Jung*
      Hyun Suk Jung
      School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
      *Email: [email protected]
      More by Hyun Suk Jung
      Orcidhttp://orcid.org/0000-0002-7803-6930
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2020, 12, 14, 17039–17045
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    https://doi.org/10.1021/acsami.9b22918
    Published March 16, 2020
    Copyright © 2020 American Chemical Society
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    Abstract

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    Hybrid organic–inorganic halide perovskites (HPs) have garnered significant attention for use in resistive switching (RS) memory devices due to their low cost, low operation voltage, high on/off ratio, and excellent mechanical properties. However, the HP-based RS memory devices continue to face several challenges owing to the short endurance and stability of the HP film. Herein, two-dimensional/three-dimensional (2D/3D) perovskite heterojunction films were prepared via a low-temperature all-solution process and their RS behavior was investigated for the first time. The 2D/3D perovskite RS devices exhibited excellent performance with an endurance of 2700 cycles, a high on/off ratio of 106, and an operation speed of 640 μs. The calculated thermally assisted ion hopping activation energy and the results of the time-of-flight secondary ion mass spectroscopy demonstrated that the 2D perovskite layer could efficiently prevent the Ag ion migration into the 3D perovskite film. Moreover, we found that owing to its high thermal conductivity, the 2D perovskite can control the rupture of the Ag conductive filament. Thus, the 2D perovskite layer enhances endurance by controlling both Ag migration and filament rupture. Hence, this study provides an alternate strategy for improving endurance of HP-based RS memory devices.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.9b22918.

    • XRD data for different concentrations of PEAI solution, SEM image for different concentrations of the PEAI solution, I–V curves as different concentrations of the PEAI solution, I–V curves of the 2D perovskite, average of the set and reset voltages for the 3D perovskite and 2D/3D perovskite, I–V curves at different compliance currents, endurance property at different concentrations of the PEAI solution, endurance property of the 2D perovskite, retention characteristics of the 3D perovskite and 2D/3D perovskite, long-term stability of the 3D perovskite and 2D/3D perovskite, XRD data for the 3D perovskite and 2D/3D perovskite, and I–V curves of aged devices and physical input parameters for COMSOL simulation (PDF)

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    Cite this: ACS Appl. Mater. Interfaces 2020, 12, 14, 17039–17045
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