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Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime

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Laboratorio MDM, IMM-CNR, via C. Olivetti 2, Agrate Brianza I-20864, Italy
Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
§ ISM-CNR, via Fosso del Cavaliere 100, Roma I-00133, Italy
Cite this: ACS Nano 2017, 11, 3, 3376–3382
Publication Date (Web):March 6, 2017
https://doi.org/10.1021/acsnano.7b00762
Copyright © 2017 American Chemical Society

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    Abstract

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    The structural and electronic properties of nanoscale Si epitaxially grown on Ag(111) can be tuned from a multilayer silicene phase, where the constitutive layers incorporate a mixed sp2/sp3 bonding, to other ordinary Si phases, such as amorphous and diamond-like Si. Based on comparative scanning tunneling microscopy and Raman spectroscopy investigations, a key role in determining the nanoscale Si phase is played by the growth temperature of the epitaxial deposition on Ag(111) substrate and the presence or absence of a single-layer silicene as a seed for the successive growth. Furthermore, when integrated into a field-effect transistor device, multilayer silicene exhibits a characteristic ambipolar charge carrier transport behavior that makes it strikingly different from other conventional Si channels and suggestive of a Dirac-like character of the electronic bands of the crystal. These findings spotlight the interest in multilayer silicene as a different nanoscale Si phase for advanced nanotechnology applications such as ultrascaled nanoelectronics and nanomembranes, as well as for fundamental exploration of quantum properties.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.7b00762.

    • Additional STM images (Figures S1 and S2); Raman spectra of SOI reference thin films (Figure S3), low-frequency modes (Figure S4), and ultraviolet SOR spectra (Figure S5), before and after delamination spectra (Figure S6), and aging spectra (Figure S7); control group devices (Figures S8 and S9); and X-ray photoelectron spectroscopy analysis (Figure S10) (PDF)

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