Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1–xInx)2Se3 Nanodevices
- Minhao Zhang ,
- Huaiqiang Wang ,
- Kejun Mu ,
- Pengdong Wang ,
- Wei Niu ,
- Shuai Zhang ,
- Guiling Xiao ,
- Yequan Chen ,
- Tong Tong ,
- Dongzhi Fu ,
- Xuefeng Wang
, - Haijun Zhang ,
- Fengqi Song,
- Feng Miao,
- Zhe Sun ,
- Zhengcai Xia ,
- Xinran Wang,
- Yongbing Xu ,
- Baigeng Wang ,
- Dingyu Xing , and
- Rong Zhang
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† National Laboratory of Solid State Microstructures and Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
‡ National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China
§ National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
⊥ Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China
# Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
*E-mail: [email protected]
*E-mail: [email protected]
*E-mail: [email protected]
Abstract
We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi1–xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a −3%:–1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.
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