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High-Efficiency Solar Cells from Extremely Low Minority Carrier Lifetime Substrates Using Radial Junction Nanowire Architecture

  • Vidur Raj*
    Vidur Raj
    Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
    *E-mail: [email protected]
    More by Vidur Raj
  • Kaushal Vora
    Kaushal Vora
    Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
    More by Kaushal Vora
  • Lan Fu
    Lan Fu
    Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
    More by Lan Fu
  • Hark H. Tan*
    Hark H. Tan
    Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
    *E-mail: [email protected]
    More by Hark H. Tan
  • , and 
  • Chennupati Jagadish
    Chennupati Jagadish
    Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia
Cite this: ACS Nano 2019, 13, 10, 12015–12023
Publication Date (Web):September 20, 2019
https://doi.org/10.1021/acsnano.9b06226
Copyright © 2019 American Chemical Society

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    Abstract

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    Currently, a significant amount of photovoltaic device cost is related to its requirement of high-quality absorber materials, especially in the case of III–V solar cells. Therefore, a technology that can transform a low-cost, low minority carrier lifetime material into an efficient solar cell can be beneficial for future applications. Here, we transform an inefficient p-type InP substrate with a minority carrier lifetime less than 100 ps into an efficient solar cell by utilizing a radial p–n junction nanowire architecture. We fabricate a p-InP/n-ZnO/AZO radial heterojunction nanowire solar cell to achieve a photovoltaic conversion efficiency of 17.1%, the best reported value for radial junction nanowire solar cells. The quantum efficiency of ∼95% (between 550 and 750 nm) and the short-circuit current density of 31.3 mA/cm2 are among the best for InP solar cells. In addition, we also perform an advanced loss analysis of the proposed solar cell to assess different loss mechanisms in the solar cell.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.9b06226.

    • Comparative lifetime measurement of substrate vs etched nanowire, simulated built-in electric field, dark and light IV of planar solar cell, definition of geometric filling ratio, and theoretical background of double diode fitting and advanced loss analysis (PDF)

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    Cited By

    This article is cited by 29 publications.

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