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Aqueous Solution-Processed GeO2: An Anode Interfacial Layer for High Performance and Air-Stable Organic Solar Cells

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    Research Article

    Aqueous Solution-Processed GeO2: An Anode Interfacial Layer for High Performance and Air-Stable Organic Solar Cells
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    Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu, 215123 China
    *E-mail: [email protected]
    *E-mail: [email protected]
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2013, 5, 21, 10866–10873
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    https://doi.org/10.1021/am4030565
    Published October 9, 2013
    Copyright © 2013 American Chemical Society
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    Abstract

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    A simple and cheap method for depositing solution-processed GeO2 (sGeO2) film is proposed utilizing the weak solubility of GeO2 in water. X-ray photoelectron spectroscopy analysis reveals that a pure GeO2 thin film can be formed by casting its aqueous solution. This method can avoid the difficulty of vacuum evaporation by its high melting point. The sGeO2 film has been used successfully as an anode interfacial layer in poly(3-hexylthiophene) (P3HT) and indene-C60 bisadduct (IC60BA)-based bulk heterojunction organic solar cells with improved power conversion efficiency and device stability compared with that using conventional poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT:PSS); the improvement of the power conversion efficiency and the device stability are estimated to be 9% and 50%, respectively. The calculations of optical intensity in a whole cell demonstrate that a thin layer of sGeO2 could function as an optical spacer in the based bulk heterojunction (BHJ) organic solar cells (OSCs) for enhancing the light harvesting in the active layer. Interfacial evaluation by impedance spectroscopy shows that the sGeO2-based cell exists less charge carrier recombination and lower contact resistance. More importantly, the sGeO2 film processing is very simple and environmentally friendly, which has potential applications in green and low-cost organic electronics in the future.

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    Supporting Information

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    The optical transmittance of interface films, AFM images of sGeO2 films with varied GeO2 solution concentrations, the decay conditions for other cell parameters including Jsc, Voc, and FF, and optical field (|E|2) distributions calculated under the consideration of the whole visible light range (300–900 nm). This material is available free of charge via the Internet at http://pubs.acs.org.

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2013, 5, 21, 10866–10873
    Click to copy citationCitation copied!
    https://doi.org/10.1021/am4030565
    Published October 9, 2013
    Copyright © 2013 American Chemical Society
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