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High Power Factor of Ga-Doped Compositionally Homogeneous Si0.68Ge0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method

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    High Power Factor of Ga-Doped Compositionally Homogeneous Si0.68Ge0.32 Bulk Crystal Grown by the Vertical Temperature Gradient Freezing Method
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    † Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan
    ‡ Faculty of Engineering, Shizuoka University, Hamamatsu 432-8011, Japan
    § Bhaha Atomic Research Center, Mumbai 400094, India
    ∥ Graduate School of Engineering Science, Osaka University, Osaka 565-0871, Japan
    ⊥ Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka 437-8555, Japan
    # Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Kanagawa 229-8510, Japan
    ∇ Crystal Growth Centre, Anna University, Chennai 60025, India
    *Tel/Fax: +81-053-478-1310. E-mail: [email protected] (Y.H.).
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    Crystal Growth & Design

    Cite this: Cryst. Growth Des. 2015, 15, 3, 1380–1388
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    https://doi.org/10.1021/cg501776h
    Published January 21, 2015
    Copyright © 2015 American Chemical Society
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    Abstract

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    Compositionally homogeneous Ga-doped Si0.68Ge0.32 bulk crystals were grown with two different doping concentrations, i.e., 1 × 1018 cm–3 (GSG1) and 1 × 1019 cm–3 (GSG2), using a vertical gradient freezing method. The growth was carried out under a mild temperature gradient of 0.57 °C/mm using a sandwich structured sample, i.e., Si(seed)/Ga-doped Ge/Si(feed). The grown crystals were cut along the growth direction to study the compositional variations, etch pit densities (EPDs), and thermoelectric characteristics. Electron backscatter diffraction analysis indicated that the (111) orientation has a larger area compared with other orientations in the grown crystal. The electrical resistivity decreased along the growth direction, although the carrier concentrations and mobility of the crystals were unchanged, possibly because of the variation in EPDs. Moreover, the electrical resistivity was found to be large at the high EPD region of the crystal. The electrical resistivity of all the samples gradually increased with temperature. The maximum values of Seebeck coefficients in GSG1 and GSG2 samples were 466 μV/K at 818 K and 459 μV/K at 892 K, respectively. The calculated power factors of GSG1 and GSG2 were higher than previously reported values (1416 μW m–1 K–2) for Si0.81Ge0.19.

    Copyright © 2015 American Chemical Society

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    This article is cited by 5 publications.

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    Crystal Growth & Design

    Cite this: Cryst. Growth Des. 2015, 15, 3, 1380–1388
    Click to copy citationCitation copied!
    https://doi.org/10.1021/cg501776h
    Published January 21, 2015
    Copyright © 2015 American Chemical Society
    Request reuse permissions

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