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Preparation of a novel gallium arsenide single-source precursor having the empirical formula AsCl3Ga2

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    Preparation of a novel gallium arsenide single-source precursor having the empirical formula AsCl3Ga2
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    Chemistry of Materials

    Cite this: Chem. Mater. 1991, 3, 3, 381–382
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    https://doi.org/10.1021/cm00015a002
    Published May 1, 1991
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    This article is cited by 19 publications.

    1. Michael S. Lube and, Richard L. Wells, , Peter S. White. Preparation and Characterization of Halogen−Boron−Phosphorus Compounds. X-ray Crystal Structures of X3B·P(SiMe3)3 and [X2BP(SiMe3)2]2 (X = Cl, Br). Inorganic Chemistry 1996, 35 (17) , 5007-5014. https://doi.org/10.1021/ic9516368
    2. Theodore A. Gazis, Ashleigh J. Cartlidge, Peter D. Matthews. Colloidal III–V quantum dots: a synthetic perspective. Journal of Materials Chemistry C 2023, 11 (12) , 3926-3935. https://doi.org/10.1039/D2TC05234B
    3. . The Preparation of III–V Semiconductor Nanomaterials. 2014, 53-76. https://doi.org/10.1039/9781782628354-00053
    4. Ombretta Masala, Ram Seshadri. SYNTHESIS ROUTES FOR LARGE VOLUMES OF NANOPARTICLES. Annual Review of Materials Research 2004, 34 (1) , 41-81. https://doi.org/10.1146/annurev.matsci.34.052803.090949
    5. Mark Green. Solution routes to III–V semiconductor quantum dots. Current Opinion in Solid State and Materials Science 2002, 6 (4) , 355-363. https://doi.org/10.1016/S1359-0286(02)00028-1
    6. . The Single Source Approach to the Deposition of Compound Semiconducting Materials by MOCVD and Related Methods. 1997, 288-312. https://doi.org/10.1002/9783527614639.ch7
    7. R.A. Baldwin, E.E. Foos, R.L. Wells. Facile preparation of nanocrystalline gallium antimonide. Materials Research Bulletin 1997, 32 (2) , 159-163. https://doi.org/10.1016/S0025-5408(96)00187-0
    8. S.S. Kher, R.L. Wells. Synthesis and characterization of colloidal nanocrystals of capped gallium arsenide. Nanostructured Materials 1996, 7 (6) , 591-603. https://doi.org/10.1016/0965-9773(96)00037-2
    9. Steven R. Aubuchon, Michael S. Lube, Richard L. Wells. Preparation and thermolysis of a single‐source precursor to gallium arsenide phosphide. Chemical Vapor Deposition 1995, 1 (1) , 28-31. https://doi.org/10.1002/cvde.19950010106
    10. Paul O'Brient, Stephen Haggata. The single‐molecule approach to the deposition of compound semiconducting materials by MOCVD and related methods. Advanced Materials for Optics and Electronics 1995, 5 (2) , 117-134. https://doi.org/10.1002/amo.860050208
    11. William E. Buhro. Metallo-organic routes to phosphide semiconductors. Polyhedron 1994, 13 (8) , 1131-1148. https://doi.org/10.1016/S0277-5387(00)80250-8
    12. Alan H. Cowley, Richard A. Jones. The single-source precursor concept. A case study of gallium arsenide. Polyhedron 1994, 13 (8) , 1149-1157. https://doi.org/10.1016/S0277-5387(00)80251-X
    13. Mark F. Self, Andrew T. McPhail, Leonidas J. Jones, Richard L. Wells, John C. Huffman. X-ray crystal structures of [(Me3SiCH2)2InCl]2 and [(Me3SiCH2)InCl2]∞. Polyhedron 1994, 13 (2) , 199-202. https://doi.org/10.1016/S0277-5387(00)86591-2
    14. J. C. Fitzmaurice, I. P. Parkin. SELF PROPAGATING ROUTES TO GALLIUM AND INDIUM CHALCOGENIDES. Main Group Metal Chemistry 1994, 17 (7) https://doi.org/10.1515/MGMC.1994.17.7.481
    15. Mark F. Self, Andrew T. McPhail, Richard L. Wells. X-ray crystal structure of InCl3·2THF, a neutral five-coordinate bis-adduct of an indium(III) trihalide. Polyhedron 1993, 12 (5) , 455-459. https://doi.org/10.1016/S0277-5387(00)83393-8
    16. Richard L. Wells, Andrew T. McPhail, Leonidas J. Jones, Mark F. Self. Dehalosilylation reactions involving E(sime3)3 and Ph2Incl. Synthesis and X-ray structures of [Ph2Ine(SiMe3)2]2 (E = P or As). Polyhedron 1993, 12 (2) , 141-147. https://doi.org/10.1016/S0277-5387(00)81620-4
    17. James D. Johansen, Andrew T. McPhail, Richard L. Wells. Reactions of GaX 3 (x  br, i) with AS(SiMe 3 ) 3 ; crystal structures of I 3 Ga · as(SiMe 3 ) 3 and [I 2 GaAS(sime 3 ) 2 ] 2. Advanced Materials for Optics and Electronics 1992, 1 (1) , 29-36. https://doi.org/10.1002/amo.860010106
    18. Richard L. Wells. The use of silylarsines to prepare gallium-arsenic compounds. Coordination Chemistry Reviews 1992, 112 , 273-291. https://doi.org/10.1016/0010-8545(92)80013-H
    19. R. L. WELLS, R. B. HALLOCK, A. T. MCPHAIL, C. G. PITT, J. D. JOHANSEN. ChemInform Abstract: Preparation of a Novel Gallium Arsenide Single‐Source Precursor Having the Empirical Formula AsCl3Ga2.. ChemInform 1991, 22 (35) https://doi.org/10.1002/chin.199135027
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    Cite this: Chem. Mater. 1991, 3, 3, 381–382
    Click to copy citationCitation copied!
    https://doi.org/10.1021/cm00015a002
    Published May 1, 1991
    Request reuse permissions

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