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Synthesis and Dynamic Random Access Memory Behavior of a Functional Polyimide
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    Synthesis and Dynamic Random Access Memory Behavior of a Functional Polyimide
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    Department of Chemical and Biomolecular Engineering and Department of Electrical and Computer Engineering, National University of Singapore, Kent Ridge, Singapore 119260, and Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan
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    Journal of the American Chemical Society

    Cite this: J. Am. Chem. Soc. 2006, 128, 27, 8732–8733
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    https://doi.org/10.1021/ja062489n
    Published June 15, 2006
    Copyright © 2006 American Chemical Society

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    The device under testing was a plastic dynamic random access memory based on a donor-functionalized polyimide (TP6F−PI), which exhibited the ability to write, read, erase, and refresh the electrical states. The device had an ON/OFF current ratio up to 105, promising minimal misreading error. Both the on and off states were stable under a constant voltage stress of 1 V and survived up to 108 read cycles at 1 V.

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     Department of Chemical and Biomolecular Engineering, National University of Singapore.

     National Taiwan University of Science and Technology.

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     Department of Electrical and Computer Engineering, National University of Singapore.

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    In papers with more than one author, the asterisk indicates the name of the author to whom inquiries about the paper should be addressed.

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    Details on polymer synthesis and characterization, molecular simulation, device fabrication, and ref 16. This material is available free of charge via the Internet at http://pubs.acs.org.

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