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Graphene Transistors via in Situ Voltage-Induced Reduction of Graphene-Oxide under Ambient Conditions

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† Nanochemistry Laboratory, ISIS−CNRS 7006, Université de Strasbourg, 8 allée Gaspard Monge, 67000 Strasbourg, France
‡ ISOF-Istituto per la Sintesi Organica e la Fotoreattività−Consiglio Nazionale delle Ricerche via Gobetti 101, 40129 Bologna, Italy
[email protected]; [email protected]
Cite this: J. Am. Chem. Soc. 2011, 133, 36, 14320–14326
Publication Date (Web):August 9, 2011
https://doi.org/10.1021/ja202371h
Copyright © 2011 American Chemical Society
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    Abstract

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    Here, we describe a simple approach to fabricate graphene-based field-effect-transistors (FETs), starting from aqueous solutions of graphene-oxide (GO), processed entirely under ambient conditions. The process relies on the site-selective reduction of GO sheets deposited in between or on the surface of micro/nanoelectrodes. The same electrodes are first used for voltage-induced electrochemical GO reduction, and then as the source and drain contacts of FETs, allowing for the straightforward production and characterization of ambipolar graphene devices. With the use of nanoelectrodes, we could reduce different selected areas belonging to one single sheet as well.

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    Further details about the experimental methods, process of GO reduction, and potential mapping. This material is available free of charge via the Internet at http://pubs.acs.org.

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