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Indium−Tin−Oxide-Based Transparent Conducting Layers for Highly Efficient Photovoltaic Devices
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    Indium−Tin−Oxide-Based Transparent Conducting Layers for Highly Efficient Photovoltaic Devices
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    School of Materials Science and Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-gu, Seoul 151-744, South Korea, Chemical and Bioscience Center, National Renewable Energy Laboratory, Golden, Colorado 80401, USA, Department of Ceramic Engineering, Kangnung National University, Kangnung, 210-702, South Korea, Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, USA, and School of Advanced Materials Engineering, Kookmin University, Jeongneung-dong, Seongbuk-gu, Seoul 136-702, South Korea
    * To whom correspondence should be addressed. E-mail: [email protected] (H.S.J.); [email protected] (K.S.H.).
    †Seoul National University.
    ‡National Renewable Energy Laboratory.
    §Kangnung National University.
    ∥University of Pittsburgh.
    ⊥Kookmin University.
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    The Journal of Physical Chemistry C

    Cite this: J. Phys. Chem. C 2009, 113, 17, 7443–7447
    Click to copy citationCitation copied!
    https://doi.org/10.1021/jp809011a
    Published April 2, 2009
    Copyright © 2009 American Chemical Society

    Abstract

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    Additional hydrogen (H2) annealing and subsequent electrochemical treatment are found to make tin-doped indium oxide (ITO)-based photoelectrodes suitable for highly efficient dye sensitized solar cells. The additional H2 annealing process recovered the electrical conductivity of the ITO film the same as its initial high conductivity, which enhanced the charge collecting property. Moreover, the employment of electrochemical oxidation of TiO2/ITO photoelectrode improved the energy conversion efficiency of the ITO-based dye-sensitized solar cells (DSSC), higher than that of a conventional FTO-based DSSC. Electrochemical impedance analysis showed that the H2 annealing process reduced the internal resistance of the cell, i.e., the resistance of the ITO and the Schottky barrier at the TiO2/ITO interface were reduced, and that the electrochemical treatment recovered the diodelike characteristics of the DSSC by retarding back electron transfer from the photoelectrode to the electrolyte. The present work demonstrates that thermally and electrochemically modified ITO-based photoelectrode is another alternative to the conventionally used FTO-based photoelectrode.

    Copyright © 2009 American Chemical Society

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    Supporting Information

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    Photocurrent−voltage curves for the DSSCs with the air-annealed and H2/air-annealed ITO, thermogravimetric analysis for the TiO2 slurry in air (black solid line) and O2 (red dashed line) atmosphere, SEM image of interface between TiO2 film and ITO and FTO, adsorbed dye amount of the electrode A, B, C, and D, fill factor as a function of sheet resistance, electrical properties of ITO (H2/O2-annealed and electrochemically treated; electrode C) and FTO (O2-annealed; electrode D), UV−vis transmittance of ITO (H2/O2-annealed and electrochemically treated) and FTO (O2-annealed). This material is available free of charge via the Internet at http://pubs.acs.org.

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    The Journal of Physical Chemistry C

    Cite this: J. Phys. Chem. C 2009, 113, 17, 7443–7447
    Click to copy citationCitation copied!
    https://doi.org/10.1021/jp809011a
    Published April 2, 2009
    Copyright © 2009 American Chemical Society

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