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    Resistive Switches and Memories from Silicon Oxide
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    † Applied Physics Program through the Department of Bioengineering
    ‡ Department of Chemistry
    § Department of Electrical and Computer Engineering
    ∥ Department of Computer Science
    ⊥ Department of Physics and Astronomy
    Rice University, 6100 Main Street, Houston, Texas 77005
    * To whom correspondence should be addressed, [email protected], [email protected], and [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2010, 10, 10, 4105–4110
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    https://doi.org/10.1021/nl102255r
    Published August 31, 2010
    Copyright © 2010 American Chemical Society
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    Abstract

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    Because of its excellent dielectric properties, silicon oxide (SiOx) has long been used and considered as a passive, insulating component in the construction of electronic devices. In contrast, here we demonstrate resistive switches and memories that use SiOx as the sole active material and can be implemented in entirely metal-free embodiments. Through cross-sectional transmission electron microscopy, we determine that the switching takes place through the voltage-driven formation and modification of silicon (Si) nanocrystals (NCs) embedded in the SiOx matrix, with SiOx itself also serving as the source of the formation of this Si pathway. The small sizes of the Si NCs (d ∼ 5 nm) suggest that scaling to ultrasmall domains could be feasible. Meanwhile, the switch also shows robust nonvolatile properties, high ON/OFF ratios (>105), fast switching (sub-100-ns), and good endurance (104 write-erase cycles). These properties in a SiOx-based material composition showcase its potentials in constructing memory or logic devices that are fully CMOS compatible.

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    Supporting Information

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    Figures showing switching time, typical forming process, annealing-assisted forming process, annealing effects in devices with and without a SiOx vertical edge, variation in device fabrication and memory switching, resistive switching in vertical SiOx devices, formation of switching in a CNT−SiOx nanogap system, and distribution of the “set” and “reset” regions. This material is available free of charge via the Internet at http://pubs.acs.org.

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    Cite this: Nano Lett. 2010, 10, 10, 4105–4110
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    https://doi.org/10.1021/nl102255r
    Published August 31, 2010
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