ACS Publications. Most Trusted. Most Cited. Most Read
Integrated Circuits Based on Bilayer MoS2 Transistors

OR SEARCH CITATIONS

My Activity
Publications

Figure 1Loading Img
Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2012, 12, 9, 4674-4680
    Letter

    Integrated Circuits Based on Bilayer MoS2 Transistors
    Click to copy article linkArticle link copied!

    View Author Information
    † Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States
    ‡ United States Army Research Laboratory, 2800 Powder Mill Road, Adelphi, Maryland 20783-1197, United States
    § Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 11529, Taiwan
    *E-mail: (H.W.) [email protected]; (T.P.) [email protected]. Tel: +1 (617) 324-2395.
    Other Access OptionsSupporting Information (1)

    Nano Letters

    Cite this: Nano Lett. 2012, 12, 9, 4674–4680
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nl302015v
    Published August 3, 2012
    Copyright © 2012 American Chemical Society
    Request reuse permissions

    Abstract

    Click to copy section linkSection link copied!
    Abstract Image

    Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.

    Copyright © 2012 American Chemical Society

    Subjects

    what are subjects

    Keywords

    what are keywords

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.

    Recommended

    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. Add or change your institution or let them know you’d like them to include access.

    Supporting Information

    Click to copy section linkSection link copied!

    Additional information and figures. This material is available free of charge via the Internet at http://pubs.acs.org.

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    Click to copy section linkSection link copied!
    Citation Statements
    Explore this article's citation statements on scite.ai
    powered by  Scite

    This article is cited by 1577 publications.

    1. Yujin Liu, Zhixiang Pan, Guoxing Chen, Rui Li, Xiaolin Cai, Yu Jia. Distinctive Electronic and Spin Properties Driven by Strong Interlayer Hybridization in the α-Tellurene/GaTe Bilayer. Langmuir 2025, 41 (9) , 6257-6267. https://doi.org/10.1021/acs.langmuir.4c05313
    2. Yuanqiu Tan, Shao-Heng Yang, Chih-Pin Lin, Fernando J. Vega, Jun Cai, Hao-Yu Lan, Rahul Tripathi, Sahej Sharma, Zhongxia Shang, Tuo-Hung Hou, Thomas E. Beechem, Joerg Appenzeller, Zhihong Chen. Monolayer WSe2 Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation. ACS Nano 2025, 19 (9) , 8916-8925. https://doi.org/10.1021/acsnano.4c16831
    3. Jianmiao Guo, Ziyuan Lin, Xiangli Che, Cong Wang, Tianqing Wan, Jianmin Yan, Ye Zhu, Yang Chai. Capacitorless Dynamic Random Access Memory with 2D Transistors by One-Step Transfer of van der Waals Dielectrics and Electrodes. ACS Nano 2025, 19 (2) , 2848-2856. https://doi.org/10.1021/acsnano.4c15750
    4. Jiamei Chen, Maolin Chen, Xing Xin, Wei Xin, Weizhen Liu, Youzhe Bao, Mengfan Ding, Peng Li, Jiangang Ma, Haiyang Xu, Yichun Liu. Equal-Bilayer MoSe2 Grown by a Nucleation-Etching Strategy with High Carrier Mobility. ACS Nano 2024, 18 (52) , 35248-35255. https://doi.org/10.1021/acsnano.4c10120
    5. Aitor Garcia-Ruiz, Ming-Hao Liu. Twisted Bilayer MoS2 under Electric Fields: A System with Tunable Symmetry. Nano Letters 2024, 24 (51) , 16317-16324. https://doi.org/10.1021/acs.nanolett.4c04556
    6. Raksan Ko, Minseo Kim, Eva Bestelink, Patryk Golec, Jaehyun Hur, Radu A. Sporea, Hocheon Yoo. Operating Principles of Gate Gap on Charge Transport in Split Gate Logic Thin-Film Transistors. ACS Applied Electronic Materials 2024, 6 (12) , 9134-9141. https://doi.org/10.1021/acsaelm.4c01760
    7. D Sharda Devi, Nihar R. Mohapatra. Exploring p-Type Contact for Monolayer WS2 FETs Using Halogen Doping and Intermediate Layers. ACS Omega 2024, 9 (51) , 50634-50641. https://doi.org/10.1021/acsomega.4c08463
    8. Ricky Dwi Septianto, Alec Paul Romagosa, Yu Dong, Hideki Matsuoka, Toshiya Ideue, Yutaka Majima, Yoshihiro Iwasa. Gate-Controlled Potassium Intercalation and Superconductivity in Molybdenum Disulfide. Nano Letters 2024, 24 (43) , 13790-13795. https://doi.org/10.1021/acs.nanolett.4c04134
    9. Chengyue Jin, Yanan Li, Jianfei Lin, Xin Guo, Yuming Shi, Hancheng Zhu, Yinglin Wang, Xintong Zhang. Efficient Transition Metal Sulfide Electrocatalysts Prepared by Laser-Induced Precursor Decomposition. ACS Applied Energy Materials 2024, 7 (19) , 8546-8553. https://doi.org/10.1021/acsaem.4c01507
    10. Xiangfeng Duan, Hua Zhang. Introduction: Two-Dimensional Layered Transition Metal Dichalcogenides. Chemical Reviews 2024, 124 (19) , 10619-10622. https://doi.org/10.1021/acs.chemrev.4c00586
    11. Guodong Xue, Biao Qin, Chaojie Ma, Peng Yin, Can Liu, Kaihui Liu. Large-Area Epitaxial Growth of Transition Metal Dichalcogenides. Chemical Reviews 2024, 124 (17) , 9785-9865. https://doi.org/10.1021/acs.chemrev.3c00851
    12. Min Zhou, Xiaoyan Jin, Meijuan Jia, Di Quan, Biying Liu, Yan Wei, Xiang-Yu Kong, Liping Wen, Lei Jiang. Light-Powered Directional Ion Transport via PFN-Br/MoS2 Heterogeneous Membranes: Band Alignment and Activation Energy Barrier Engineering. ACS Applied Materials & Interfaces 2024, 16 (30) , 39321-39329. https://doi.org/10.1021/acsami.4c05901
    13. Muhammad Yar Khan, Arzoo Hassan, Abdus Samad, Abdullah Al Souwaileh. Exploring the Structural Stability of 1T-PdO2 and the Interface Properties of the 1T-PdO2/Graphene Heterojunction. ACS Omega 2024, 9 (26) , 28176-28185. https://doi.org/10.1021/acsomega.4c01305
    14. Guoliang Li, Dandan Zhang, Nan Tian, Danmin Liu, Yongzhe Zhang, Yanhan Yang. Exfoliated Layered NaP15 Nanoribbons with Anisotropic Properties for Polarization Devices. ACS Applied Nano Materials 2024, 7 (12) , 14487-14493. https://doi.org/10.1021/acsanm.4c01919
    15. Bing-Yin Shi, Hong-Yu Li, Hong-Xu Cao, Xin-Yu Zheng, Yu Liu, Cheng-Bao Yao. Photogenerated Carrier Separation and Localized Surface Plasmon Resonance in MoS2/Metal Nanocomposites: Implications for Photoelectric Devices. ACS Applied Nano Materials 2024, 7 (11) , 12806-12820. https://doi.org/10.1021/acsanm.4c01222
    16. Xiuxiu Han, Xiaoli Ma, Qing Miao, Xiaoxian Zhang, Dawei He, Xiaohui Yu, Yongsheng Wang. Tunable Photocarrier Dynamics in CuS Nanoflakes under Pressure Modulation. ACS Omega 2024, 9 (20) , 22248-22255. https://doi.org/10.1021/acsomega.4c01294
    17. Yixuan Zou, Peng Li, Caizhen Su, Jiawen Yan, Haojie Zhao, Zekun Zhang, Zheng You. Flexible High-Temperature MoS2 Field-Effect Transistors and Logic Gates. ACS Nano 2024, 18 (13) , 9627-9635. https://doi.org/10.1021/acsnano.3c13220
    18. Lei Yin, Ruiqing Cheng, Jiahui Ding, Jian Jiang, Yutang Hou, Xiaoqiang Feng, Yao Wen, Jun He. Two-Dimensional Semiconductors and Transistors for Future Integrated Circuits. ACS Nano 2024, 18 (11) , 7739-7768. https://doi.org/10.1021/acsnano.3c10900
    19. Jeonghwan Ahn, Iuegyun Hong, Gwangyoung Lee, Hyeondeok Shin, Anouar Benali, Jaron T. Krogel, Yongkyung Kwon. Structural Stability of Graphene-Supported Pt Layers: Diffusion Monte Carlo and Density Functional Theory Calculations. The Journal of Physical Chemistry C 2023, 127 (37) , 18630-18640. https://doi.org/10.1021/acs.jpcc.3c03160
    20. Riccardo Torsi, Kyle T. Munson, Rahul Pendurthi, Esteban Marques, Benoit Van Troeye, Lysander Huberich, Bruno Schuler, Maxwell Feidler, Ke Wang, Geoffrey Pourtois, Saptarshi Das, John B. Asbury, Yu-Chuan Lin, Joshua A. Robinson. Dilute Rhenium Doping and its Impact on Defects in MoS2. ACS Nano 2023, 17 (16) , 15629-15640. https://doi.org/10.1021/acsnano.3c02626
    21. Shounak Roy, Aastha, Kaivalya A. Deo, Kashmira Dey, Akhilesh K. Gaharwar, Amit Jaiswal. Nanobio Interface Between Proteins and 2D Nanomaterials. ACS Applied Materials & Interfaces 2023, 15 (30) , 35753-35787. https://doi.org/10.1021/acsami.3c04582
    22. Robert Chrostowski, John F. Curry, Michael T. Dugger, Nicolas Molina, Tomas F. Babuska, Hugo Celio, Andrei Dolocan, Filippo Mangolini. Spectroscopic Evaluation of Surface Chemical Processes Occurring in MoS2 upon Aging. ACS Applied Materials & Interfaces 2023, 15 (30) , 37047-37058. https://doi.org/10.1021/acsami.3c06737
    23. Xintong Li, Peng Zhou, Xuan Hu, Ethan Rivers, Kenji Watanabe, Takashi Taniguchi, Deji Akinwande, Joseph S. Friedman, Jean Anne C. Incorvia. Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe2 Thin Film Transistors. ACS Nano 2023, 17 (13) , 12798-12808. https://doi.org/10.1021/acsnano.3c03932
    24. Yu-Chuan Lin, Riccardo Torsi, Rehan Younas, Christopher L. Hinkle, Albert F. Rigosi, Heather M. Hill, Kunyan Zhang, Shengxi Huang, Christopher E. Shuck, Chen Chen, Yu-Hsiu Lin, Daniel Maldonado-Lopez, Jose L. Mendoza-Cortes, John Ferrier, Swastik Kar, Nadire Nayir, Siavash Rajabpour, Adri C. T. van Duin, Xiwen Liu, Deep Jariwala, Jie Jiang, Jian Shi, Wouter Mortelmans, Rafael Jaramillo, Joao Marcelo J. Lopes, Roman Engel-Herbert, Anthony Trofe, Tetyana Ignatova, Seng Huat Lee, Zhiqiang Mao, Leticia Damian, Yuanxi Wang, Megan A. Steves, Kenneth L. Knappenberger, Jr., Zhengtianye Wang, Stephanie Law, George Bepete, Da Zhou, Jiang-Xiazi Lin, Mathias S. Scheurer, Jia Li, Pengjie Wang, Guo Yu, Sanfeng Wu, Deji Akinwande, Joan M. Redwing, Mauricio Terrones, Joshua A. Robinson. Recent Advances in 2D Material Theory, Synthesis, Properties, and Applications. ACS Nano 2023, 17 (11) , 9694-9747. https://doi.org/10.1021/acsnano.2c12759
    25. Ryoichi Kato, Haruki Uchiyama, Tomonori Nishimura, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Edward Chen, Kosuke Nagashio. p-Type Conversion of WS2 and WSe2 by Position-Selective Oxidation Doping and Its Application in Top Gate Transistors. ACS Applied Materials & Interfaces 2023, 15 (22) , 26977-26984. https://doi.org/10.1021/acsami.3c04052
    26. Lin-Yun Huang, Ming-Yang Li, San-Lin Liew, Shih-Chu Lin, Ang-Sheng Chou, Ming-Chun Hsu, Ching-Hao Hsu, Yu-Tung Lin, Po-Sen Mao, Duen-Huei Hou, Wei-Cheng Liu, Chih-I Wu, Wen-Hao Chang, Han Wang, Lain-Jong Li, Kung-Hwa Wei. Area-Selective Growth of Two-Dimensional Mono- And Bilayer WS2 for Field Effect Transistors. ACS Materials Letters 2023, 5 (6) , 1760-1766. https://doi.org/10.1021/acsmaterialslett.3c00094
    27. Biao Zhang, Yuchen Zhu, Yi Zeng, Zijing Zhao, Xiaoxiao Huang, Daping Qiu, Zhi Fang, Jingjing Wang, Junjie Xu, Rongming Wang, Song Gao, Yanglong Hou. General Approach for Two-Dimensional Rare-Earth Oxyhalides with High Gate Dielectric Performance. Journal of the American Chemical Society 2023, 145 (20) , 11074-11084. https://doi.org/10.1021/jacs.3c00401
    28. Yilin Zhang, Yuanhui Sun, Huimin Mu, Hongshuai Zou, Fuyu Tian, Yuhao Fu, Lijun Zhang. Evaluating In-Plane Thermal Expansion of Two-Dimensional Layered Materials via Effective Descriptors. The Journal of Physical Chemistry C 2023, 127 (19) , 9407-9417. https://doi.org/10.1021/acs.jpcc.3c02071
    29. Hoyeon Cho, Donghyun Lee, Kyungmin Ko, Der-Yuh Lin, Huimin Lee, Sangwoo Park, Beomsung Park, Byung Chul Jang, Dong-Hyeok Lim, Joonki Suh. Double-Floating-Gate van der Waals Transistor for High-Precision Synaptic Operations. ACS Nano 2023, 17 (8) , 7384-7393. https://doi.org/10.1021/acsnano.2c11538
    30. Jun-Cheol Park, Seungkyu Kim, Hojoong Choi, Yoonsung Jung, Inhyeok Oh, Jun Beom Hwang, Sanghan Lee. Growth of Multilayer WSe2/Bi2O2Se Heterostructures for Photodetection without Lithography. Crystal Growth & Design 2023, 23 (4) , 2092-2098. https://doi.org/10.1021/acs.cgd.2c01029
    31. Sabeen Fatima, Yuqian Gu, Sung Jin Yang, Shanmukh Kutagulla, Syed Rizwan, Deji Akinwande. Comparative Study between Sulfurized MoS2 from Molybdenum and Molybdenum Trioxide Precursors for Thin-Film Device Applications. ACS Applied Materials & Interfaces 2023, 15 (12) , 16308-16316. https://doi.org/10.1021/acsami.3c00824
    32. Song Hao, Shancheng Han, Jichang Zhang, Jingjie Li, Nan Wang, Xiaogan Li. Improving Contacts and Electrical Performances of Nanofilms of MoS2 Transistors through Ultrastrong vdW Integration with Dirac Semimetal PtTe2. ACS Applied Nano Materials 2023, 6 (4) , 2285-2291. https://doi.org/10.1021/acsanm.2c05051
    33. Hongfeng Wan, Weixuan Li, Xiaoqing Ma, Yanqi Mu, Guancai Xie, Mengshan Li, Beidou Guo, Jian Ru Gong. 3 nm Channel MoS2 Transistors by Electromigration of Metal Interconnection. ACS Applied Electronic Materials 2023, 5 (1) , 247-254. https://doi.org/10.1021/acsaelm.2c01306
    34. Na Li, Qinqin Wang, Congli He, Jiawei Li, Xiuzhen Li, Cheng Shen, Biying Huang, Jian Tang, Hua Yu, Shuopei Wang, Luojun Du, Wei Yang, Rong Yang, Dongxia Shi, Guangyu Zhang. 2D Semiconductor Based Flexible Photoresponsive Ring Oscillators for Artificial Vision Pixels. ACS Nano 2023, 17 (2) , 991-999. https://doi.org/10.1021/acsnano.2c06921
    35. Wei Li, Qingrui Jia, Hongjiao Dong, Zi’ang Wang, Yucheng Wang, Yupan Wu, Xiaodong Zhao, Zhao Chen, Shaoxi Wang. ReS2 Nanosheet-Based Channels for Two-Dimensional Field Effect Transistors and Phototransistors with High Photoresponsivity. ACS Applied Nano Materials 2023, 6 (1) , 512-522. https://doi.org/10.1021/acsanm.2c04600
    36. Zhuotong Liu, Nathaniel Hawthorne, Fanglue Wu, Noah Sheehan, Nicolas Argibay, John F. Curry, James D. Batteas. Reactivity of Diazonium Salts on Single- and Multilayer MoS2 on Au(111). The Journal of Physical Chemistry C 2022, 126 (43) , 18266-18274. https://doi.org/10.1021/acs.jpcc.2c03760
    37. Shakya Chakrabarti, Akshay Wali, Harikrishnan Ravichandran, Shamik Kundu, Thomas F. Schranghamer, Kanad Basu, Saptarshi Das. Logic Locking of Integrated Circuits Enabled by Nanoscale MoS2-Based Memtransistors. ACS Applied Nano Materials 2022, 5 (10) , 14447-14455. https://doi.org/10.1021/acsanm.2c02807
    38. Jinpeng Tian, Yalin Peng, Qinqin Wang, Yanbang Chu, Zhiheng Huang, Na Li, Xiuzhen Li, Jian Tang, Biying Huang, Rong Yang, Luojun Du, Wei Yang, Dongxia Shi, Guangyu Zhang. Rail-to-Rail MoS2 Inverters. ACS Applied Electronic Materials 2022, 4 (6) , 2636-2640. https://doi.org/10.1021/acsaelm.2c00444
    39. Yea-Shine Lee, Sina Abedini Dereshgi, Shiqiang Hao, Matthew Cheng, Muhammad Arslan Shehzad, Christopher Wolverton, Koray Aydin, Roberto dos Reis, Vinayak P. Dravid. Probing the Optical Response and Local Dielectric Function of an Unconventional Si@MoS2 Core–Shell Architecture. Nano Letters 2022, 22 (12) , 4848-4853. https://doi.org/10.1021/acs.nanolett.2c01221
    40. Nicholas Hight-Huf, James Nicolas Pagaduan, Reika Katsumata, Todd Emrick, Michael D. Barnes. Stabilization of Three-Particle Excitations in Monolayer MoS2 by Fluorinated Methacrylate Polymers. The Journal of Physical Chemistry Letters 2022, 13 (21) , 4794-4799. https://doi.org/10.1021/acs.jpclett.2c01150
    41. Fangzhi Yan, Chih-Kai Liao, Mahmoud A. Mahmoud, Stephan B. Bach. Electron Doping of Semiconducting MoS2 Nanosheets by Silver or Gold Nanoclusters. Langmuir 2022, 38 (14) , 4378-4388. https://doi.org/10.1021/acs.langmuir.2c00120
    42. Jingyi Ma, Xinyu Chen, Xinyu Wang, Jihong Bian, Ling Tong, Honglei Chen, Xiaojiao Guo, Yin Xia, Xinzhi Zhang, Zihan Xu, Congrong He, Jialing Qu, Peng Zhou, Chenjian Wu, Xing Wu, Wenzhong Bao. Engineering Top Gate Stack for Wafer-Scale Integrated Circuit Fabrication Based on Two-Dimensional Semiconductors. ACS Applied Materials & Interfaces 2022, 14 (9) , 11610-11618. https://doi.org/10.1021/acsami.1c22990
    43. Siqi Yin, Jiacheng Sun, Yiming Sun, Leilei Qiao, Wenxuan Zhu, Feng Pan, Xiaozhong Zhang, Cheng Song. Basic Logic Operations Achieved in a Single 2D WSe2 Transistor by Surface-Charge-Transfer Doping. ACS Applied Electronic Materials 2021, 3 (11) , 5059-5065. https://doi.org/10.1021/acsaelm.1c00808
    44. Nicholas Hight-Huf, Yehiel Nagar, Adi Levi, James Nicolas Pagaduan, Avdhoot Datar, Reika Katsumata, Todd Emrick, Ashwin Ramasubramaniam, Doron Naveh, Michael D. Barnes. Polarization-Driven Asymmetric Electronic Response of Monolayer Graphene to Polymer Zwitterions Probed from Both Sides. ACS Applied Materials & Interfaces 2021, 13 (40) , 47945-47953. https://doi.org/10.1021/acsami.1c13505
    45. Saba Baraghani, Jehad Abourahma, Zahra Barani, Amirmahdi Mohammadzadeh, Sriharsha Sudhindra, Alexey Lipatov, Alexander Sinitskii, Fariborz Kargar, Alexander A. Balandin. Printed Electronic Devices with Inks of TiS3 Quasi-One-Dimensional van der Waals Material. ACS Applied Materials & Interfaces 2021, 13 (39) , 47033-47042. https://doi.org/10.1021/acsami.1c12948
    46. Soohyung Park, Thorsten Schultz, Dongguen Shin, Niklas Mutz, Areej Aljarb, Hee Seong Kang, Chul-Ho Lee, Lain-Jong Li, Xiaomin Xu, Vincent Tung, Emil J. W. List-Kratochvil, Sylke Blumstengel, Patrick Amsalem, Norbert Koch. The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening. ACS Nano 2021, 15 (9) , 14794-14803. https://doi.org/10.1021/acsnano.1c04825
    47. Chih-Kai Liao, Guanhua Wu, Mahmoud A. Mahmoud. Tuning the Optical Band Gap of Two-Dimensional WS2 Integrated with Gold Nanocubes by Introducing Palladium Nanostructures. Langmuir 2021, 37 (36) , 10720-10731. https://doi.org/10.1021/acs.langmuir.1c01307
    48. Alvin Tang, Aravindh Kumar, Marc Jaikissoon, Krishna Saraswat, H.-S. Philip Wong, Eric Pop. Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2. ACS Applied Materials & Interfaces 2021, 13 (35) , 41866-41874. https://doi.org/10.1021/acsami.1c06812
    49. Wan Zhang, Feng Qiu, Yong Li, Rui Zhang, Huan Liu, Lun Li, Jiyang Xie, Wanbiao Hu. Lattice Defect Engineering Enables Performance-Enhanced MoS2 Photodetection through a Paraelectric BaTiO3 Dielectric. ACS Nano 2021, 15 (8) , 13370-13379. https://doi.org/10.1021/acsnano.1c03402
    50. Mayank Shrivastava, V. Ramgopal Rao. A Roadmap for Disruptive Applications and Heterogeneous Integration Using Two-Dimensional Materials: State-of-the-Art and Technological Challenges. Nano Letters 2021, 21 (15) , 6359-6381. https://doi.org/10.1021/acs.nanolett.1c00729
    51. Qianyang Zhang, Linlin Hou, Yang Lu, Jun Chen, Yingqiu Zhou, Viktoryia Shautsova, Jamie H. Warner. Large-Scale Uniform-Patterned Arrays of Ultrathin All-2D Vertical Stacked Photodetector Devices. ACS Applied Materials & Interfaces 2021, 13 (29) , 34696-34704. https://doi.org/10.1021/acsami.1c05136
    52. Robin Khosla, Satinder K. Sharma. Integration of Ferroelectric Materials: An Ultimate Solution for Next-Generation Computing and Storage Devices. ACS Applied Electronic Materials 2021, 3 (7) , 2862-2897. https://doi.org/10.1021/acsaelm.0c00851
    53. Subhrajit Mukherjee, Rup K. Chowdhury, Debjani Karmakar, Meher Wan, Chacko Jacob, Soumen Das, Samit K. Ray. Plasmon Triggered, Enhanced Light–Matter Interactions in Au–MoS2 Coupled System with Superior Photosensitivity. The Journal of Physical Chemistry C 2021, 125 (20) , 11023-11034. https://doi.org/10.1021/acs.jpcc.1c00652
    54. Feng He, Yongjian Zhou, Zefang Ye, Sang-Hyeok Cho, Jihoon Jeong, Xianghai Meng, Yaguo Wang. Moiré Patterns in 2D Materials: A Review. ACS Nano 2021, 15 (4) , 5944-5958. https://doi.org/10.1021/acsnano.0c10435
    55. Hui Yang, Sa Cai, Yifei Zhang, Dongping Wu, Xiaosheng Fang. Enhanced Electrical Properties of Lithography-Free Fabricated MoS2 Field Effect Transistors with Chromium Contacts. The Journal of Physical Chemistry Letters 2021, 12 (11) , 2705-2711. https://doi.org/10.1021/acs.jpclett.1c00231
    56. Xueting Zhai, Renxiang Zhang, Huixiang Sheng, Jin Wang, Yameng Zhu, Zichen Lu, Zhuoyao Li, Xiao Huang, Hai Li, Gang Lu. Direct Observation of the Light-Induced Exfoliation of Molybdenum Disulfide Sheets in Water Medium. ACS Nano 2021, 15 (3) , 5661-5670. https://doi.org/10.1021/acsnano.1c00838
    57. Abdul Ghaffar, Mohit D. Ganeriwala, Kenta Hongo, Ryo Maezono, Nihar R. Mohapatra. Insights into the Mechanical and Electrical Properties of a Metal–Phosphorene Interface: An Ab Initio Study with a Wide Range of Metals. ACS Omega 2021, 6 (11) , 7795-7803. https://doi.org/10.1021/acsomega.0c06255
    58. Tengyu Jin, Yue Zheng, Jing Gao, Yanan Wang, Enlong Li, Huipeng Chen, Xuan Pan, Ming Lin, Wei Chen. Controlling Native Oxidation of HfS2 for 2D Materials Based Flash Memory and Artificial Synapse. ACS Applied Materials & Interfaces 2021, 13 (8) , 10639-10649. https://doi.org/10.1021/acsami.0c22561
    59. Zhaowu Tang, Chunsen Liu, Xiaohe Huang, Senfeng Zeng, Liwei Liu, Jiayi Li, Yu-Gang Jiang, David Wei Zhang, Peng Zhou. A Steep-Slope MoS2/Graphene Dirac-Source Field-Effect Transistor with a Large Drive Current. Nano Letters 2021, 21 (4) , 1758-1764. https://doi.org/10.1021/acs.nanolett.0c04657
    60. Himani Jawa, Abin Varghese, Saurabh Lodha. Electrically Tunable Room Temperature Hysteresis Crossover in Underlap MoS2 Field-Effect Transistors. ACS Applied Materials & Interfaces 2021, 13 (7) , 9186-9194. https://doi.org/10.1021/acsami.0c21530
    61. Sunzhi Yang, Xianlin Chen, Zurong Gu, Tieyong Ling, Yanling Li, Shouxiao Ma. Cu-Doped MoSe2 Monolayer: A Novel Candidate for Dissolved Gas Analysis in Transformer Oil. ACS Omega 2020, 5 (47) , 30603-30609. https://doi.org/10.1021/acsomega.0c04572
    62. Nicholas Hunter, Nurul Azam, Hamidreza Zobeiri, Ridong Wang, Masoud Mahjouri-Samani, Xinwei Wang. Interfacial Thermal Conductance between Monolayer WSe2 and SiO2 under Consideration of Radiative Electron–Hole Recombination. ACS Applied Materials & Interfaces 2020, 12 (45) , 51069-51081. https://doi.org/10.1021/acsami.0c14990
    63. Nguyen Tat Trung, Mohammad Ikram Hossain, Md Iftekharul Alam, Atsushi Ando, Osamu Kitakami, Nobuaki Kikuchi, Tsuyoshi Takaoka, Yasuyuki Sainoo, Ryuichi Arafune, Tadahiro Komeda. In Situ Study of Molecular Doping of Chlorine on MoS2 Field Effect Transistor Device in Ultrahigh Vacuum Conditions. ACS Omega 2020, 5 (43) , 28108-28115. https://doi.org/10.1021/acsomega.0c03741
    64. K. K. Mishra, T. R. Ravindran, Joshua O. Island, Eduardo Flores, Jose Ramon Ares, Carlos Sanchez, Isabel J. Ferrer, Herre S. J. van der Zant, Amit Pawbake, R. Kanawade, Andres Castellanos-Gomez, Dattatray J. Late. Raman Fingerprint of Pressure-Induced Phase Transitions in TiS3 Nanoribbons: Implications for Thermal Measurements under Extreme Stress Conditions. ACS Applied Nano Materials 2020, 3 (9) , 8794-8802. https://doi.org/10.1021/acsanm.0c01583
    65. Mengwei Si, Joseph Andler, Xiao Lyu, Chang Niu, Suman Datta, Rakesh Agrawal, Peide D. Ye. Indium–Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating. ACS Nano 2020, 14 (9) , 11542-11547. https://doi.org/10.1021/acsnano.0c03978
    66. Baojun Pan, Kenan Zhang, Changchun Ding, Zhen Wu, Qunchao Fan, Tingyan Luo, Lijie Zhang, Chao Zou, Shaoming Huang. Universal Precise Growth of 2D Transition-Metal Dichalcogenides in Vertical Direction. ACS Applied Materials & Interfaces 2020, 12 (31) , 35337-35344. https://doi.org/10.1021/acsami.0c08335
    67. Aaron H. Rose, Jeremy R. Dunklin, Hanyu Zhang, Juan M. Merlo, Jao van de Lagemaat. Plasmon-Mediated Coherent Superposition of Discrete Excitons under Strong Exciton–Plasmon Coupling in Few-Layer MoS2 at Room Temperature. ACS Photonics 2020, 7 (5) , 1129-1134. https://doi.org/10.1021/acsphotonics.0c00233
    68. Chun Ma, Sarah Clark, Zhixiong Liu, Liangliang Liang, Yuliar Firdaus, Ran Tao, Ali Han, Xiaogang Liu, Lain-Jong Li, Thomas D. Anthopoulos, Mark C. Hersam, Tom Wu. Solution-Processed Mixed-Dimensional Hybrid Perovskite/Carbon Nanotube Electronics. ACS Nano 2020, 14 (4) , 3969-3979. https://doi.org/10.1021/acsnano.9b07888
    69. F Fabbri, F. Dinelli, S. Forti, L. Sementa, S. Pace, G. Piccinini, A. Fortunelli, C. Coletti, P. Pingue. Edge Defects Promoted Oxidation of Monolayer WS2 Synthesized on Epitaxial Graphene. The Journal of Physical Chemistry C 2020, 124 (16) , 9035-9044. https://doi.org/10.1021/acs.jpcc.0c00350
    70. Chih-Kai Liao, Jasmine Phan, Heber Martinez-Barron, Mahmoud A. Mahmoud. Modulating the Optical Band Gap of Small Semiconducting Two-Dimensional Materials by Conjugated Polymers. Langmuir 2020, 36 (10) , 2574-2583. https://doi.org/10.1021/acs.langmuir.9b03335
    71. Congli He, Jian Tang, Da-Shan Shang, Jianshi Tang, Yue Xi, Shuopei Wang, Na Li, Qingtian Zhang, Ji-Kai Lu, Zheng Wei, Qinqin Wang, Cheng Shen, Jiawei Li, Shipeng Shen, Jianxin Shen, Rong Yang, Dongxia Shi, Huaqiang Wu, Shouguo Wang, Guangyu Zhang. Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing. ACS Applied Materials & Interfaces 2020, 12 (10) , 11945-11954. https://doi.org/10.1021/acsami.9b21747
    72. Wei-Hsiang Lin, Wei-Shiuan Tseng, Cora M. Went, Marcus L. Teague, George. R. Rossman, Harry A. Atwater, Nai-Chang Yeh. Nearly 90% Circularly Polarized Emission in Monolayer WS2 Single Crystals by Chemical Vapor Deposition. ACS Nano 2020, 14 (2) , 1350-1359. https://doi.org/10.1021/acsnano.9b05550
    73. Il-Kwon Oh, Woo-Hee Kim, Li Zeng, Joseph Singh, Dowon Bae, Adriaan J. M. Mackus, Jeong-Gyu Song, Seunggi Seo, Bonggeun Shong, Hyungjun Kim, Stacey F. Bent. Synthesis of a Hybrid Nanostructure of ZnO-Decorated MoS2 by Atomic Layer Deposition. ACS Nano 2020, 14 (2) , 1757-1769. https://doi.org/10.1021/acsnano.9b07467
    74. Yiwei Zhao, Yan Li, Mingxia Liu, Kewei Xu, Fei Ma. Strain-Controllable Phase and Magnetism Transitions in Re-Doped MoTe2 Monolayer. The Journal of Physical Chemistry C 2020, 124 (7) , 4299-4307. https://doi.org/10.1021/acs.jpcc.9b11036
    75. Hamin Park, Dong Sik Oh, Khang June Lee, Dae Yool Jung, Seunghee Lee, Seunghyup Yoo, Sung-Yool Choi. Flexible and Transparent Thin-Film Transistors Based on Two-Dimensional Materials for Active-Matrix Display. ACS Applied Materials & Interfaces 2020, 12 (4) , 4749-4754. https://doi.org/10.1021/acsami.9b18945
    76. Gwang Hyuk Shin, Geon-Beom Lee, Eun-Su An, Cheolmin Park, Hyeok Jun Jin, Khang June Lee, Dong Sik Oh, Jun Sung Kim, Yang-Kyu Choi, Sung-Yool Choi. High-Performance Field-Effect Transistor and Logic Gates Based on GaS–MoS2 van der Waals Heterostructure. ACS Applied Materials & Interfaces 2020, 12 (4) , 5106-5112. https://doi.org/10.1021/acsami.9b20077
    77. Fuyou Liao, Zhongxun Guo, Yin Wang, Yufeng Xie, Simeng Zhang, Yaochen Sheng, Hongwei Tang, Zihan Xu, Antoine Riaud, Peng Zhou, Jing Wan, Michael S. Fuhrer, Xiangwei Jiang, David Wei Zhang, Yang Chai, Wenzhong Bao. High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture. ACS Applied Electronic Materials 2020, 2 (1) , 111-119. https://doi.org/10.1021/acsaelm.9b00628
    78. Chao-Hui Yeh, Zheng-Yong Liang, Yung-Chang Lin, Hsiang-Chieh Chen, Ta Fan, Chun-Hao Ma, Ying-Hao Chu, Kazu Suenaga, Po-Wen Chiu. Graphene–Transition Metal Dichalcogenide Heterojunctions for Scalable and Low-Power Complementary Integrated Circuits. ACS Nano 2020, 14 (1) , 985-992. https://doi.org/10.1021/acsnano.9b08288
    79. Marco Negri, Luca Francaviglia, Dumitru Dumcenco, Matteo Bosi, Daniel Kaplan, Venkataraman Swaminathan, Giancarlo Salviati, Andras Kis, Filippo Fabbri, Anna Fontcuberta i Morral. Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials. Nano Letters 2020, 20 (1) , 567-576. https://doi.org/10.1021/acs.nanolett.9b04304
    80. Junjia Wang, Adrien Rousseau, Elad Eizner, Anne-Laurence Phaneuf-L’Heureux, Léonard Schue, Sébastien Francoeur, Stéphane Kéna-Cohen. Spectral Responsivity and Photoconductive Gain in Thin Film Black Phosphorus Photodetectors. ACS Photonics 2019, 6 (12) , 3092-3099. https://doi.org/10.1021/acsphotonics.9b00951
    81. Fangzhi Yan, Chih-Kai Liao, Guanhua Wu, Stephan B. Bach, Mahmoud A. Mahmoud. Metal Nanoclusters Modify the Band Gap and Maintain the Ultrathin Nature of Semiconducting Two-Dimensional Materials. The Journal of Physical Chemistry C 2019, 123 (49) , 29856-29865. https://doi.org/10.1021/acs.jpcc.9b08103
    82. Shuai Wei, Chuanyang Ge, Lijie Zhou, Shichao Zhang, Mingjin Dai, Feng Gao, Yi Sun, Yunfeng Qiu, Zhenlong Wang, Jia Zhang, PingAn Hu. Performance Improvement of Multilayered SnS2 Field Effect Transistors through Synergistic Effect of Vacancy Repairing and Electron Doping Introduced by EDTA. ACS Applied Electronic Materials 2019, 1 (11) , 2380-2388. https://doi.org/10.1021/acsaelm.9b00550
    83. Puspamitra Panigrahi, Tanveer Hussain, Amir Karton, Rajeev Ahuja. Elemental Substitution of Two-Dimensional Transition Metal Dichalcogenides (MoSe2 and MoTe2): Implications for Enhanced Gas Sensing. ACS Sensors 2019, 4 (10) , 2646-2653. https://doi.org/10.1021/acssensors.9b01044
    84. Mingxing Li, Jia-Shiang Chen, Mircea Cotlet. Light-Induced Interfacial Phenomena in Atomically Thin 2D van der Waals Material Hybrids and Heterojunctions. ACS Energy Letters 2019, 4 (9) , 2323-2335. https://doi.org/10.1021/acsenergylett.9b01399
    85. Yi Wen, Colin Ophus, Christopher S. Allen, Shiang Fang, Jun Chen, Efthimios Kaxiras, Angus I. Kirkland, Jamie H. Warner. Simultaneous Identification of Low and High Atomic Number Atoms in Monolayer 2D Materials Using 4D Scanning Transmission Electron Microscopy. Nano Letters 2019, 19 (9) , 6482-6491. https://doi.org/10.1021/acs.nanolett.9b02717
    86. Yang Wang, Zheng-Hao Gu, Hao Liu, Lin Chen, Xin-ke Liu, Long Min, Zhi-wen Li, Hao Zhu, Qing-Qing Sun. Feasibility of Large-Scale MoS2 Thin-Film Transistors on a GaN Substrate. ACS Applied Electronic Materials 2019, 1 (8) , 1418-1423. https://doi.org/10.1021/acsaelm.9b00236
    87. Dianyu Qi, Cheng Han, Ximing Rong, Xiu-Wen Zhang, Manish Chhowalla, Andrew T. S. Wee, Wenjing Zhang. Continuously Tuning Electronic Properties of Few-Layer Molybdenum Ditelluride with in Situ Aluminum Modification toward Ultrahigh Gain Complementary Inverters. ACS Nano 2019, 13 (8) , 9464-9472. https://doi.org/10.1021/acsnano.9b04416
    88. Chinedu Obiakara, Chih-Kai Liao, Mahmoud A. Mahmoud. Mechanical Exfoliation Assisted by Molecular Tweezers for Production of Sulfur-Based Semiconducting Two-Dimensional Materials. Industrial & Engineering Chemistry Research 2019, 58 (31) , 14170-14179. https://doi.org/10.1021/acs.iecr.9b03082
    89. Katherine M. Price, Sina Najmaei, Chinedu E. Ekuma, Robert A. Burke, Madan Dubey, Aaron D. Franklin. Plasma-Enhanced Atomic Layer Deposition of HfO2 on Monolayer, Bilayer, and Trilayer MoS2 for the Integration of High-κ Dielectrics in Two-Dimensional Devices. ACS Applied Nano Materials 2019, 2 (7) , 4085-4094. https://doi.org/10.1021/acsanm.9b00505
    90. Rui Ma, Huairuo Zhang, Youngdong Yoo, Zachary Patrick Degregorio, Lun Jin, Prafful Golani, Javad Ghasemi Azadani, Tony Low, James E. Johns, Leonid A. Bendersky, Albert V. Davydov, Steven J. Koester. MoTe2 Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering. ACS Nano 2019, 13 (7) , 8035-8046. https://doi.org/10.1021/acsnano.9b02785
    91. Ren-Jie Chang, Yuewen Sheng, Gyeong Hee Ryu, Nhlakanipho Mkhize, Tongxin Chen, Yang Lu, Jun Chen, Ja Kyung Lee, Harish Bhaskaran, Jamie H. Warner. Postgrowth Substitutional Tin Doping of 2D WS2 Crystals Using Chemical Vapor Deposition. ACS Applied Materials & Interfaces 2019, 11 (27) , 24279-24288. https://doi.org/10.1021/acsami.9b06588
    92. Tanmay Goswami, Renu Rani, Kiran Shankar Hazra, Hirendra N. Ghosh. Ultrafast Carrier Dynamics of the Exciton and Trion in MoS2 Monolayers Followed by Dissociation Dynamics in Au@MoS2 2D Heterointerfaces. The Journal of Physical Chemistry Letters 2019, 10 (11) , 3057-3063. https://doi.org/10.1021/acs.jpclett.9b01022
    93. Pratik Pataniya, Chetan K. Zankat, Mohit Tannarana, C. K. Sumesh, Som Narayan, G. K. Solanki, K. D. Patel, V. M. Pathak, Prafulla K. Jha. Paper-Based Flexible Photodetector Functionalized by WSe2 Nanodots. ACS Applied Nano Materials 2019, 2 (5) , 2758-2766. https://doi.org/10.1021/acsanm.9b00266
    94. Ajjiporn Dathbun, Youngchan Kim, Yongsuk Choi, Jia Sun, Seongchan Kim, Byunggil Kang, Moon Sung Kang, Do Kyung Hwang, Sungjoo Lee, Changgu Lee, Jeong Ho Cho. Selectively Metallized 2D Materials for Simple Logic Devices. ACS Applied Materials & Interfaces 2019, 11 (20) , 18571-18579. https://doi.org/10.1021/acsami.9b03078
    95. Jihun Mun, Hyeji Park, Jaeseo Park, DaeHwa Joung, Seoung-Ki Lee, Juyoung Leem, Jae-Min Myoung, Jonghoo Park, Soo-Hwan Jeong, Won Chegal, SungWoo Nam, Sang-Woo Kang. High-Mobility MoS2 Directly Grown on Polymer Substrate with Kinetics-Controlled Metal–Organic Chemical Vapor Deposition. ACS Applied Electronic Materials 2019, 1 (4) , 608-616. https://doi.org/10.1021/acsaelm.9b00078
    96. Wangping Xu, Rui Wang, Baobing Zheng, Xiaozhi Wu, Hu Xu. New Family of Two-Dimensional Ternary Photoelectric Materials. ACS Applied Materials & Interfaces 2019, 11 (15) , 14457-14462. https://doi.org/10.1021/acsami.9b00969
    97. Yongjae Cho, Ji Hoon Park, Minju Kim, Yeonsu Jeong, Sanghyuck Yu, June Yeong Lim, Yeonjin Yi, Seongil Im. Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors. Nano Letters 2019, 19 (4) , 2456-2463. https://doi.org/10.1021/acs.nanolett.9b00019
    98. Chih-Kai Liao, Jasmine Phan, Maura Herrera, Mahmoud A. Mahmoud. Modifying the Band Gap of Semiconducting Two-Dimensional Materials by Polymer Assembly into Different Structures. Langmuir 2019, 35 (14) , 4956-4965. https://doi.org/10.1021/acs.langmuir.9b00205
    99. Youngchan Kim, Hunyoung Bark, Byunggil Kang, Changgu Lee. Wafer-Scale Substitutional Doping of Monolayer MoS2 Films for High-Performance Optoelectronic Devices. ACS Applied Materials & Interfaces 2019, 11 (13) , 12613-12621. https://doi.org/10.1021/acsami.8b20714
    100. Eric Singh, Pragya Singh, Ki Seok Kim, Geun Young Yeom, Hari Singh Nalwa. Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics. ACS Applied Materials & Interfaces 2019, 11 (12) , 11061-11105. https://doi.org/10.1021/acsami.8b19859
    Load more citations
    Download PDF
    Go to Nano Letters
    Get e-Alerts
    Get e-Alerts

    Nano Letters

    Cite this: Nano Lett. 2012, 12, 9, 4674–4680
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nl302015v
    Published August 3, 2012
    Copyright © 2012 American Chemical Society
    Request reuse permissions

    Article Views

    29k

    Altmetric

    -

    Citations

    1577
    Learn about these metrics

    Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.

    Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.

    The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.