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Modification of Electrical Properties of Graphene by Substrate-Induced Nanomodulation

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School of Electrical Engineering, WCU on Flexible Nanosystems, Korea University, Seoul 136-713, Korea
Institute of Applied Physics and INCH, University of Hamburg, 20355 Hamburg, Germany
§ Division of Quantum Phases and Device, School of Physics, Konkuk University, Seoul 143-701, Korea
Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747, Korea
Cite this: Nano Lett. 2013, 13, 8, 3494–3500
Publication Date (Web):July 12, 2013
Copyright © 2013 American Chemical Society

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    A periodically modulated graphene (PMG) generated by nanopatterned surfaces is reported to profoundly modify the intrinsic electronic properties of graphene. The temperature dependence of the sheet resistivity and gate response measurements clearly show a semiconductor-like behavior. Raman spectroscopy reveals significant shifts of the G and the 2D modes induced by the interaction with the underlying grid-like nanostructure. The influence of the periodic, alternating contact with the substrate surface was studied in terms of strain caused by bending of graphene and doping through chemical interactions with underlying substrate atoms. Electronic structure calculations performed on a model of PMG reveals that it is possible to tune a band gap within 0.14–0.19 eV by considering both the periodic mechanical bending and the surface coordination chemistry. Therefore, the PMG can be regarded as a further step toward band gap engineering of graphene devices.

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    Additional information on fabricated PMG samples and their Raman characteristics, sheet resistance measurement on the modulated graphene, strain calculation for the PMG geometries (Figure 5a,b), and DFT calculations supporting the concept of graphene corrugation combined with a periodic doping in PMG. This material is available free of charge via the Internet at

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