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Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures

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    Tunneling Electroresistance Induced by Interfacial Phase Transitions in Ultrathin Oxide Heterostructures
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    † Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
    ‡ Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
    § Department of Physics, Southeast University, Nanjing 211189, China
    ∥ Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
    ⊥ Condensed Matter Physics and Materials Sciences Department, Brookhaven National Laboratory, Upton, New York 11973, United States
    Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
    *E-mail: [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2013, 13, 12, 5837–5843
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    https://doi.org/10.1021/nl4025598
    Published November 8, 2013
    Copyright © 2013 American Chemical Society
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    Abstract

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    The ferroelectric (FE) control of electronic transport is one of the emerging technologies in oxide heterostructures. Many previous studies in FE tunnel junctions (FTJs) exploited solely the differences in the electrostatic potential across the FTJs that are induced by changes in the FE polarization direction. Here, we show that in practice the junction current ratios between the two polarization states can be further enhanced by the electrostatic modification in the correlated electron oxide electrodes, and that FTJs with nanometer thin layers can effectively produce a considerably large electroresistance ratio at room temperature. To understand these surprising results, we employed an additional control parameter, which is related to the crossing of electronic and magnetic phase boundaries of the correlated electron oxide. The FE-induced phase modulation at the heterointerface ultimately results in an enhanced electroresistance effect. Our study highlights that the strong coupling between degrees of freedom across heterointerfaces could yield versatile and novel applications in oxide electronics.

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    Additional information on tunneling through PZT/LSMO heterostructures, influence of magnetic ordering on polarization-coupled interfacial carrier modulation, TER ratio reversal in capacitor geometry, and STEM investigation. This material is available free of charge via the Internet at http://pubs.acs.org.

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    Cite this: Nano Lett. 2013, 13, 12, 5837–5843
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    https://doi.org/10.1021/nl4025598
    Published November 8, 2013
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