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Crossover from Josephson Effect to Single Interface Andreev Reflection in Asymmetric Superconductor/Nanowire Junctions

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Peter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Institute of Semiconductor Electronics, RWTH Aachen University, 52074 Aachen, Germany
Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, 142432 Moscow district, Russia
§ Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russia
Peter Grünberg Institute (PGI-8) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
Cite this: Nano Lett. 2014, 14, 9, 4977–4981
Publication Date (Web):August 14, 2014
Copyright © 2014 American Chemical Society

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    We report on the fabrication and characterization of symmetric nanowire-based Josephson junctions, that is, Al- and Nb-based junctions, and asymmetric junctions employing superconducting Al and Nb. In the symmetric junctions, a clear and pronounced Josephson supercurrent is observed. These samples also show clear signatures of subharmonic gap structures. At zero magnetic field, a Josephson coupling is found for the asymmetric Al/InAs-nanowire/Nb junctions as well. By applying a magnetic field above the critical field of Al or by raising the temperature above the critical temperature of Al the junction can be switched to an effective single-interface superconductor/nanowire structure. In this regime, a pronounced zero-bias conductance peak due to reflectionless tunneling has been observed.

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    IV characteristics of the symmetric junctions, differential resistance of the asymmetric junction, and figures of typical current–voltage characteristics of a symmetric Al-based junction (sample Al-J1) and Nb-based junction (sample Nb-J1) at different temperatures and dV/dI versus bias voltage at different magnetic fields. This material is available free of charge via the Internet at

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