ACS Publications. Most Trusted. Most Cited. Most Read
Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.

OR SEARCH CITATIONS

My Activity
Publications

Figure 1Loading Img
Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2015, 15, 5, 2958-2964
    Letter

    Quantum Dot Made in Metal Oxide Silicon-Nanowire Field Effect Transistor Working at Room Temperature.
    Click to copy article linkArticle link copied!

    View Author Information
    † Université Grenoble Alpes, F-38000 Grenoble, France
    ‡ CEA, LETI MINATEC campus, F-38054 Grenoble, France
    § Université Grenoble Alpes, INAC-SPSMS, F-38000 Grenoble, France
    ∥ CEA, INAC-SPSMS, F-38054 Grenoble, France
    ⊥ Université Grenoble Alpes, INAC-SPMM, F-38000 Grenoble, France
    # CEA, INAC-SPMM, F-38054 Grenoble, France
    *E-mail: [email protected]. Phone: +33(0)4 38 78 43 67. Fax: +33(0)4 38 78 50 96.
    Other Access OptionsSupporting Information (1)

    Nano Letters

    Cite this: Nano Lett. 2015, 15, 5, 2958–2964
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nl504806s
    Published April 29, 2015
    Copyright © 2015 American Chemical Society
    Request reuse permissions

    Abstract

    Click to copy section linkSection link copied!
    Abstract Image

    We report the observation of an atomic like behavior from T = 4.2 K up to room temperature in n- and p-type Ω-gate silicon nanowire (NW) transistors. For that purpose, we modified the design of a NW transistor and introduced long spacers between the source/drain and the channel in order to separate the channel from the electrodes. The channel was made extremely small (3.4 nm in diameter with 10 nm gate length) with a thick gate oxide (7 nm) in order to enhance the Coulomb repulsion between carriers, which can be as large as 200 meV when surface roughness promotes charge confinement. Parasitic stochastic Coulomb blockade effect can be eliminated in our devices by choosing proper control voltages. Moreover, the quantum dot can be tuned so that the resonant current at T = 4.2 K exceeds that at room temperature.

    Copyright © 2015 American Chemical Society

    Subjects

    what are subjects

    Keywords

    what are keywords

    Read this article

    To access this article, please review the available access options below.

    Get instant access

    Purchase Access

    Read this article for 48 hours. Check out below using your ACS ID or as a guest.

    Recommended

    Access through Your Institution

    You may have access to this article through your institution.

    Your institution does not have access to this content. Add or change your institution or let them know you’d like them to include access.

    Supporting Information

    Click to copy section linkSection link copied!

    Additional experimental data (surface roughness, double dot stability diagram, temperature dependence, and Coulomb diamonds at room temperature) and modeling details (methodology and additional results). The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/nl504806s.

    Terms & Conditions

    Most electronic Supporting Information files are available without a subscription to ACS Web Editions. Such files may be downloaded by article for research use (if there is a public use license linked to the relevant article, that license may permit other uses). Permission may be obtained from ACS for other uses through requests via the RightsLink permission system: http://pubs.acs.org/page/copyright/permissions.html.

    Cited By

    Click to copy section linkSection link copied!
    Citation Statements
    Explore this article's citation statements on scite.ai
    powered by  Scite

    This article is cited by 24 publications.

    1. Emily M. Turner, Quinn Campbell, Joaquín Pizarro, Hongbin Yang, Keshab R. Sapkota, Ping Lu, Andrew D. Baczewski, George T. Wang, Kevin S. Jones. Controlled Formation of Stacked Si Quantum Dots in Vertical SiGe Nanowires. Nano Letters 2021, 21 (19) , 7905-7912. https://doi.org/10.1021/acs.nanolett.1c01670
    2. Amar S. Katkar, Shobhnath P. Gupta, Carmine Granata, Ciro Nappi, Wilfrid Prellier, Lih-Juann Chen, Pravin S. Walke. Advanced Room Temperature Single-Electron Transistor of a Germanium Nanochain with Two and Multitunnel Junctions. ACS Applied Electronic Materials 2020, 2 (7) , 1843-1848. https://doi.org/10.1021/acsaelm.0c00242
    3. Mykhailo V. Klymenko, Jesse A. Vaitkus, Jared H. Cole. Probing Charge Carrier Movement in Organic Semiconductor Thin Films via Nanowire Conductance Spectroscopy. ACS Applied Electronic Materials 2019, 1 (8) , 1667-1677. https://doi.org/10.1021/acsaelm.9b00354
    4. Kenji Shibata, Masaki Yoshida, Kazuhiko Hirakawa, Tomohiro Otsuka, Satria Zulkarnaen Bisri, Yoshihiro Iwasa. Single PbS colloidal quantum dot transistors. Nature Communications 2023, 14 (1) https://doi.org/10.1038/s41467-023-43343-7
    5. Ibrahim Ethem Bagci, Thomas McGrath, Christine Barthelmes, Scott Dean, Ramon Bernardo Gavito, Robert James Young, Utz Roedig. Resonant-Tunnelling Diodes as PUF Building Blocks. IEEE Transactions on Emerging Topics in Computing 2021, 9 (2) , 878-885. https://doi.org/10.1109/TETC.2019.2893040
    6. Mingyue Cui, Sangmo Liu, Bin Song, Daoxia Guo, Jinhua Wang, Guyue Hu, Yuanyuan Su, Yao He. Fluorescent Silicon Nanorods-Based Nanotheranostic Agents for Multimodal Imaging-Guided Photothermal Therapy. Nano-Micro Letters 2019, 11 (1) https://doi.org/10.1007/s40820-019-0306-9
    7. Kouta Ibukuro, Muhammad Khaled Husain, Zuo Li, Joseph Hillier, Fayong Liu, Isao Tomita, Yoshishige Tsuchiya, Harvey Rutt, Shinichi Saito. Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature. Frontiers in Physics 2019, 7 https://doi.org/10.3389/fphy.2019.00152
    8. Xin-Yu Wu, Wei-Hua Han, Fu-Hua Yang, , . Quantum transport relating to impurity quantum dots in silicon nanostructure transistor. Acta Physica Sinica 2019, 68 (8) , 087301. https://doi.org/10.7498/aps.68.20190095
    9. M. Seo, P. Roulleau, P. Roche, D. C. Glattli, M. Sanquer, X. Jehl, L. Hutin, S. Barraud, F. D. Parmentier. Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots. Physical Review Letters 2018, 121 (2) https://doi.org/10.1103/PhysRevLett.121.027701
    10. Ying Li, Gregory W. Holloway, Simon C. Benjamin, G. Andrew D. Briggs, Jonathan Baugh, Jan A. Mol. Double quantum dot memristor. Physical Review B 2017, 96 (7) https://doi.org/10.1103/PhysRevB.96.075446
    11. Svenja Willing, Hauke Lehmann, Mirjam Volkmann, Christian Klinke. Metal nanoparticle film–based room temperature Coulomb transistor. Science Advances 2017, 3 (7) https://doi.org/10.1126/sciadv.1603191
    12. Zuo Li, Muhammad Khaled Husain, Hiroyuki Yoshimoto, Kazuki Tani, Yoshitaka Sasago, Digh Hisamoto, Jonathan David Fletcher, Masaya Kataoka, Yoshishige Tsuchiya, Shinichi Saito. Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures. Semiconductor Science and Technology 2017, 32 (7) , 075001. https://doi.org/10.1088/1361-6641/aa6910
    13. R. Laviéville, C. Le Royer, S. Barraud, G. Ghibaudo. Low Temperature Characterization of Hole Mobility in Sub-14nm Gate Length Si 0.7 Ge 0.3 Tri-Gate pMOSFETs. Journal of Physics: Conference Series 2017, 834 , 012001. https://doi.org/10.1088/1742-6596/834/1/012001
    14. Felix J. Schupp. Single-electron devices in silicon. Materials Science and Technology 2017, 33 (8) , 944-962. https://doi.org/10.1080/02670836.2016.1242826
    15. Zahid A K Durrani, Mervyn E Jones, Chen Wang, Dixi Liu, Jonathan Griffiths. Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors. Nanotechnology 2017, 28 (12) , 125208. https://doi.org/10.1088/1361-6528/aa5ddd
    16. Philippe Dollfus, François Triozon. Introduction: Nanoelectronics, Quantum Mechanics, and Solid State Physics. 2016, 1-30. https://doi.org/10.1002/9781118761793.ch1
    17. Hao Wang, Wei-Hua Han, Xiao-Song Zhao, Wang Zhang, Qi-Feng Lyu, Liu-Hong Ma, Fu-Hua Yang. Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor. Chinese Physics B 2016, 25 (10) , 108102. https://doi.org/10.1088/1674-1056/25/10/108102
    18. L. Hutin, R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, X. Jehl, S. Barraud, S. De Franceschi, M. Sanquer, M. Vinet. Si CMOS platform for quantum information processing. 2016, 1-2. https://doi.org/10.1109/VLSIT.2016.7573380
    19. Romain Lavieville, Sylvain Barraud, Christian Arvet, Christian Vizioz, Andrea Corna, Xavier Jehl, Marc Sanquer, Maud Vinet. Demonstration of Single Hole Transistor and Hybrid Circuits for Multivalued Logic and Memory Applications up to 350 K Using CMOS Silicon Nanowires. Advanced Electronic Materials 2016, 2 (4) https://doi.org/10.1002/aelm.201500244
    20. Anri Nakajima. Application of Single-Electron Transistor to Biomolecule and Ion Sensors. Applied Sciences 2016, 6 (4) , 94. https://doi.org/10.3390/app6040094
    21. Xavier Jehl, Yann-Michel Niquet, Marc Sanquer. Single donor electronics and quantum functionalities with advanced CMOS technology. Journal of Physics: Condensed Matter 2016, 28 (10) , 103001. https://doi.org/10.1088/0953-8984/28/10/103001
    22. Léo Bourdet, Jing Li, Johan Pelloux-Prayer, François Triozon, Mikaël Cassé, Sylvain Barraud, Sébastien Martinie, Denis Rideau, Yann-Michel Niquet. Contact resistances in trigate and FinFET devices in a non-equilibrium Green's functions approach. Journal of Applied Physics 2016, 119 (8) https://doi.org/10.1063/1.4942217
    23. Marco Turchetti, Harald Homulle, Fabio Sebastiano, Giorgio Ferrari, Edoardo Charbon, Enrico Prati. Tunable single hole regime of a silicon field effect transistor in standard CMOS technology. Applied Physics Express 2016, 9 (1) , 014001. https://doi.org/10.7567/APEX.9.014001
    24. Jing Li, Gabriel Mugny, Yann-Michel Niquet, Christophe Delerue. Drift velocity versus electric field in ⟨110⟩ Si nanowires: Strong confinement effects. Applied Physics Letters 2015, 107 (6) https://doi.org/10.1063/1.4928525
    Download PDF
    Go to Nano Letters
    Get e-Alerts
    Get e-Alerts

    Nano Letters

    Cite this: Nano Lett. 2015, 15, 5, 2958–2964
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nl504806s
    Published April 29, 2015
    Copyright © 2015 American Chemical Society
    Request reuse permissions

    Article Views

    1309

    Altmetric

    -

    Citations

    24
    Learn about these metrics

    Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.

    Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.

    The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated.