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Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles

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Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2009, 9, 1, 427-432
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    Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles
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    Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska, Lincoln, Nebraska 68588-0111, Department of Physics and Institute for Functional Nanomaterials, University of Puerto Rico, San Juan, PR 00931-3344, Key Laboratory of Polarized Materials and Devices, East China Normal University, Shanghai 200062, China, International Centre for Theoretical Physics (ICTP), Strada Costiera 11, 34014 Trieste, Italy, and International School for Advanced Studies (SISSA) and CNR/DEMOCRITOS National Simulation Center, Via Beirut 2-4, 34014 Trieste, Italy
    * Corresponding authors: J.P.V., [email protected]; E.Y.T., [email protected]
    †Cofirst authors.
    ⊥University of Nebraska.
    ‡University of Puerto Rico.
    §East China Normal University.
    ∥International Centre for Theoretical Physics.
    ¶International School for Advanced Studies (SISSA) and CNR/DEMOCRITOS National Simulation Center.
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    Nano Letters

    Cite this: Nano Lett. 2009, 9, 1, 427–432
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    https://doi.org/10.1021/nl803318d
    Published December 29, 2008
    Copyright © 2008 American Chemical Society
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    Abstract

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    Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently, driven by demonstrations of ferroelectricity at the nanoscale, thin-film ferroelectric barriers were proposed to extend the functionality of MTJs. Due to the sensitivity of conductance to the magnetization alignment of the electrodes (tunneling magnetoresistance) and the polarization orientation in the ferroelectric barrier (tunneling electroresistance), these multiferroic tunnel junctions (MFTJs) may serve as four-state resistance devices. On the basis of first-principles calculations, we demonstrate four resistance states in SrRuO3/BaTiO3/SrRuO3 MFTJs with asymmetric interfaces. We find that the resistance of such a MFTJ is significantly changed when the electric polarization of the barrier is reversed and/or when the magnetizations of the electrodes are switched from parallel to antiparallel. These results reveal the exciting prospects of MFTJs for application as multifunctional spintronic devices.

    Copyright © 2008 American Chemical Society

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    Cite this: Nano Lett. 2009, 9, 1, 427–432
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    https://doi.org/10.1021/nl803318d
    Published December 29, 2008
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