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    Ambipolar and Unipolar PbSe Nanowire Field-Effect Transistors
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    † ‡ § †Department of Materials Science & Engineering, ‡Department of Chemistry, and §Department of Electrical Systems and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
    *Address correspondence to [email protected]
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    ACS Nano

    Cite this: ACS Nano 2011, 5, 4, 3230–3236
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    https://doi.org/10.1021/nn200348p
    Published March 15, 2011
    Copyright © 2011 American Chemical Society
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    Abstract

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    Wet-chemical methods, under rigorous air-free conditions, were used to synthesize single-crystalline 10 nm diameter PbSe nanowires (NWs), and electric-field, directed assembly was employed to align NW arrays to form the semiconducting channels of field-effect transistors (FETs). Electrical measurements revealed as-aligned NWs in bottom, gold, contact FETs are predominantly p-type ambipolar, consistent with the presentation of small barriers to electron and hole injection for this low band gap semiconductor. Exposing the NW FET to UV-ozone p-doped the NWs, illustrating the sensitivity of PbSe to oxygen, but controlled oxidation allowed the fabrication of unipolar p-type FETs. Selectively exposing the contact region of as-aligned NW FETs to low to moderate concentrations of hydrazine, commonly used to n-dope nanocrystal and NW devices, switched the predominantly p- to n-type ambipolar behavior as if the entire NW channel was exposed. At these hydrazine concentrations, charge transfer doping the metal−semiconductor interface dominates the FET characteristics. Only upon exposing the NW FETs to high hydrazine concentrations did charge transfer doping of the NW channel overcome the large intrinsic, thermally generated carrier concentration of this low band gap material, modulating the NW carrier concentration and forming unipolar n-type FETs. Pulling low vacuum removed surface hydrazine returning the predominantly p-type ambipolar FET behavior. Doping and dedoping with hydrazine were repeatedly reversible. By applying surface modification to n- and p-dope PbSe NW FETs, we fabricated the first PbSe NW inverters, demonstrating the promise of these nanostructured materials in integrated circuits.

    Copyright © 2011 American Chemical Society

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    Characterization of PbSe NWs, as well as electric-field assisted alignment of PbSe NW FETs and fabrication of the blocking layer. This material is available free of charge via the Internet at http://pubs.acs.org.

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    ACS Nano

    Cite this: ACS Nano 2011, 5, 4, 3230–3236
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nn200348p
    Published March 15, 2011
    Copyright © 2011 American Chemical Society
    Request reuse permissions

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