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Two-Dimensional Transport-Induced Linear Magneto-Resistance in Topological Insulator Bi2Se3 Nanoribbons
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    Two-Dimensional Transport-Induced Linear Magneto-Resistance in Topological Insulator Bi2Se3 Nanoribbons
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    Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States.
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    ACS Nano

    Cite this: ACS Nano 2011, 5, 9, 7510–7516
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    https://doi.org/10.1021/nn2024607
    Published July 27, 2011
    Copyright © 2011 American Chemical Society

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    We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi2Se3 nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi2Te3, and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi2Se3 nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room-temperature magneto-electronic applications.

    Copyright © 2011 American Chemical Society

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    Cite this: ACS Nano 2011, 5, 9, 7510–7516
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    Published July 27, 2011
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