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Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene

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    Persistent Topological Surface State at the Interface of Bi2Se3 Film Grown on Patterned Graphene
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    † ‡ †Department of Chemistry, ‡Department of Physics, §Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Korea
    ⊥ Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 500-712, Korea
    ∥ Department of Chemistry, Ulsan National Institute of Science and Technology, Ulsan 689-798, Korea
    *Address correspondence to [email protected], [email protected]
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    ACS Nano

    Cite this: ACS Nano 2014, 8, 2, 1154–1160
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    https://doi.org/10.1021/nn405503k
    Published January 20, 2014
    Copyright © 2014 American Chemical Society
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    Abstract

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    We employed graphene as a patternable template to protect the intrinsic surface states of thin films of topological insulators (TIs) from environment. Here we find that the graphene provides high-quality interface so that the Shubnikov de Haas (SdH) oscillation associated with a topological surface state could be observed at the interface of a metallic Bi2Se3 film with a carrier density higher than ∼1019 cm–3. Our in situ X-ray diffraction study shows that the Bi2Se3 film grows epitaxially in a quintuple layer-by-layer fashion from the bottom layer without any structural distortion by interfacial strain. The magnetotransport measurements including SdH oscillations stemming from multiple conductance channels reveal that the topological surface state, with the mobility as high as ∼0.5 m2/(V s), remains intact from the graphene underneath without degradation. Given that the graphene was prepatterned on arbitrary insulating substrates, the TI-based microelectronic design could be exploited. Our study thus provides a step forward to observe the topological surface states at the interface without degradation by tuning the interface between TI and graphene into a measurable current for device application.

    Copyright © 2014 American Chemical Society

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    Supporting Information

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    Atomic structure of Bi2Se3 on graphene and device structure; fitting of diffraction intensity profiles; X-ray reflectivity; AFM images for Bi2Se3 film on SiC, film on CVD graphene/SiO2, film on microscale exfoliated graphene/SiO2; conductance of each channel as a function of B; T-, B-dependence of SdH oscillations; comparison of ΔRxx (ΔRxy) SdH oscillations; analysis of the magnetotransport for multiple carriers. This material is available free of charge via the Internet at http://pubs.acs.org.

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    Cited By

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    ACS Nano

    Cite this: ACS Nano 2014, 8, 2, 1154–1160
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nn405503k
    Published January 20, 2014
    Copyright © 2014 American Chemical Society
    Request reuse permissions

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