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Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates

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    Creating Quantum Emitters in Hexagonal Boron Nitride Deterministically on Chip-Compatible Substrates
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    • Xiaohui Xu
      Xiaohui Xu
      School of Materials Engineering, Purdue University, West Lafayette, Indiana 47906, United States
      More by Xiaohui Xu
      Orcidhttps://orcid.org/0000-0003-0369-3917
    • Zachariah O. Martin
      Zachariah O. Martin
      School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
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    • Demid Sychev
      Demid Sychev
      School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
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    • Alexei S. Lagutchev
      Alexei S. Lagutchev
      School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
      More by Alexei S. Lagutchev
    • Yong P. Chen
      Yong P. Chen
      School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
      Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47906, United States
      Department of Physics and Astronomy, Aarhus University, Aarhus 8000, Denmark
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    • Takashi Taniguchi
      Takashi Taniguchi
      National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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      Orcidhttps://orcid.org/0000-0002-1467-3105
    • Kenji Watanabe
      Kenji Watanabe
      National Institute for Materials Science, Tsukuba, Ibaraki 305-0047, Japan
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      Orcidhttps://orcid.org/0000-0003-3701-8119
    • Vladimir M. Shalaev
      Vladimir M. Shalaev
      School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
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    • Alexandra Boltasseva*
      Alexandra Boltasseva
      School of Materials Engineering, Purdue University, West Lafayette, Indiana 47906, United States
      School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47906, United States
      *Email: [email protected]
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      Orcidhttps://orcid.org/0000-0001-8905-2605
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    Nano Letters

    Cite this: Nano Lett. 2021, 21, 19, 8182–8189
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    https://doi.org/10.1021/acs.nanolett.1c02640
    Published October 4, 2021
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    Abstract

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    Two-dimensional hexagonal boron nitride (hBN) that hosts room-temperature single-photon emitters (SPEs) is promising for quantum information applications. An important step toward the practical application of hBN is the on-demand, position-controlled generation of SPEs. Strategies reported for deterministic creation of hBN SPEs either rely on substrate nanopatterning that is not compatible with integrated photonics or utilize radiation sources that might introduce unpredictable damage or contamination to hBN. Here, we report a radiation- and lithography-free route to deterministically activate hBN SPEs by nanoindentation with atomic force microscopy (AFM). The method applies to hBN flakes on flat silicon dioxide–silicon substrates that can be readily integrated into on-chip photonic devices. The achieved SPE yields are above 30% for multiple indent sizes, and a maximum yield of 36% is demonstrated for indents around 400 nm. Our results mark an important step toward the deterministic creation and integration of hBN SPEs with photonic and plasmonic devices.

    Copyright © 2021 American Chemical Society

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    • Details of sample preparation and experimental setup. Measurement and determination of indent size, dependence of indentation depth on the maximum cantilever displacement, additional data of hBN flakes used for optical measurements, and control experiment with hBN flakes annealed at 800 °C (PDF)

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    Cite this: Nano Lett. 2021, 21, 19, 8182–8189
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    https://doi.org/10.1021/acs.nanolett.1c02640
    Published October 4, 2021
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