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Microwave-Frequency Scanning Gate Microscopy of a Si/SiGe Double Quantum Dot

  • Artem O. Denisov*
    Artem O. Denisov
    Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
    *Email: [email protected]
  • Seong W. Oh
    Seong W. Oh
    Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
    More by Seong W. Oh
  • Gordian Fuchs
    Gordian Fuchs
    Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
  • Adam R. Mills
    Adam R. Mills
    Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
  • Pengcheng Chen
    Pengcheng Chen
    Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544, United States
  • Christopher R. Anderson
    Christopher R. Anderson
    Department of Mathematics, University of California, Los Angeles, California 90095, United States
  • Mark F. Gyure
    Mark F. Gyure
    Center for Quantum Science and Engineering, University of California, Los Angeles, California 90095, United States
  • Arthur W. Barnard
    Arthur W. Barnard
    Department of Physics, University of Washington, 98195 Seattle, Washington United States
    Department of Materials Science and Engineering, University of Washington, 98195 Seattle, Washington United States
  • , and 
  • Jason R. Petta*
    Jason R. Petta
    Department of Physics, Princeton University, Princeton, New Jersey 08544, United States
    *Email: [email protected]
Cite this: Nano Lett. 2022, 22, 12, 4807–4813
Publication Date (Web):June 9, 2022
https://doi.org/10.1021/acs.nanolett.2c01098
Copyright © 2022 American Chemical Society

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    Abstract

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    Conventional transport methods provide quantitative information on spin, orbital, and valley states in quantum dots but lack spatial resolution. Scanning tunneling microscopy, on the other hand, provides exquisite spatial resolution at the expense of speed. Working to combine the spatial resolution and energy sensitivity of scanning probe microscopy with the speed of microwave measurements, we couple a metallic tip to a Si/SiGe double quantum dot (DQD) that is integrated with a charge detector. We first demonstrate that the dc-biased tip can be used to change the occupancy of the DQD. We then apply microwaves through the tip to drive photon-assisted tunneling (PAT). We infer the DQD level diagram from the frequency and detuning dependence of the tunneling resonances. These measurements allow the resolution of ∼65 μeV excited states, an energy consistent with valley splittings in Si/SiGe. This work demonstrates the feasibility of scanning gate experiments with Si/SiGe devices.

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    The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.2c01098.

    • Figures and discussion of extended stability diagram; evolution of stability diagram with tip voltage; and height, voltage bias, and tip voltage dependence of SGM features (PDF)

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    Cited By

    This article is cited by 1 publications.

    1. Constantine Yannouleas, Uzi Landman. Valleytronic full configuration-interaction approach: Application to the excitation spectra of Si double-dot qubits. Physical Review B 2022, 106 (19) https://doi.org/10.1103/PhysRevB.106.195306

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