Strong Exciton–Exciton Scattering of Exfoliated van der Waals InSe toward Efficient Continuous-Wave Near-Infrared P-Band EmissionClick to copy article linkArticle link copied!
- Yin LiangYin LiangSchool of Materials Science and Engineering, Peking University, Beijing 100871, ChinaMore by Yin Liang
- Liyun ZhaoLiyun ZhaoSchool of Materials Science and Engineering, Peking University, Beijing 100871, ChinaMore by Liyun Zhao
- Chun LiChun LiSchool of Materials Science and Engineering, Peking University, Beijing 100871, ChinaMore by Chun Li
- Jiaxing DuJiaxing DuSchool of Materials Science and Engineering, Peking University, Beijing 100871, ChinaMore by Jiaxing Du
- Qiuyu ShangQiuyu ShangSchool of Materials Science and Engineering, Peking University, Beijing 100871, ChinaMore by Qiuyu Shang
- Zhongming WeiZhongming WeiState Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, ChinaMore by Zhongming Wei
- Qing Zhang*Qing Zhang*Email: [email protected]School of Materials Science and Engineering, Peking University, Beijing 100871, ChinaMore by Qing Zhang
Abstract

P-band emission is a superlinear low-coherence emission through exciton–exciton (X–X) scattering into photon-like states. It occurs without the prerequisites of population inversion or macroscopical coherence, rendering lower power consumption than the widely explored superlinear low-coherence emissions including superfluorescence, amplified spontaneous emission, and random lasing, and holds great potential for speckle-free imaging and interferometric sensing. However, competition processes including exciton dissociation and annihilation undermine its operation at room temperature and/or low excitation conditions. Here we report room-temperature P-band emission from InSe microflakes with excitation density of 1010 cm–2, offering 2-orders-of-magnitude lower operation density compared to the state-of-the-art superlinear low-coherence emissions. The efficient P-band emission is attributed to a large X–X scattering strength of 0.25 μeV μm2 due to enhanced spatial confinement along with intrinsic material metrics of 3D/2D exciton complex and asymmetric electron/hole mass. These findings open an avenue toward strong low-coherence near-infrared light sources based on van der Waals semiconductors.
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