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    Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier
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    † †Department of Electrical Engineering, §Department of Mechanical Engineering, and ∥Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
    ‡ Samsung Advanced Institute of Technology (SAIT), Suwon, 443-803, South Korea
    *C.A. E-mail: [email protected]
    *H.-S.P.W. E-mail: [email protected]
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    Nano Letters

    Cite this: Nano Lett. 2015, 15, 10, 6809–6814
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    https://doi.org/10.1021/acs.nanolett.5b02661
    Published August 26, 2015
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    Abstract

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    Phase-change memory (PCM) is an important class of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Here we improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W) heater. Graphene-PCM (G-PCM) devices have ∼40% lower RESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 105 cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acs.nanolett.5b02661.

    • Details of the TDTR (time–domain thermoreflectance) measurements, 3D finite-element (COMSOL) simulation, process flow for fabricating the G-PCM (graphene-inserted PCM) device, SEM image of the electron-beam patterned W plug and via, Raman spectroscopy for graphene, measured RESET current (IRESET) as a function of the effective contact diameter of the PCM/G-PCM, and cycle-to-cycle distributions of measured IRESET for PCM and G-PCM devices (PDF)

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    Cite this: Nano Lett. 2015, 15, 10, 6809–6814
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    https://doi.org/10.1021/acs.nanolett.5b02661
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