Flexible Ferroelectric Hafnia-Based Synaptic Transistor by Focused-Microwave AnnealingClick to copy article linkArticle link copied!
- Hongrae JohHongrae JohSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South KoreaMore by Hongrae Joh
- Minhyun JungMinhyun JungSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South KoreaMore by Minhyun Jung
- Junghyeon HwangJunghyeon HwangSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South KoreaMore by Junghyeon Hwang
- Youngin GohYoungin GohSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South KoreaMore by Youngin Goh
- Taeseung JungTaeseung JungSchool of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South KoreaMore by Taeseung Jung
- Sanghun Jeon*Sanghun Jeon*Email: [email protected]School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, South KoreaMore by Sanghun Jeon
Abstract
Hafnia-based ferroelectric memory devices with excellent ferroelectricity, low power consumption, and fast operation speed have attracted considerable interest with the ever-growing desire for nonvolatile memory in flexible electronics. However, hafnia films are required to perform a high temperature (>500 °C) annealing process for crystallization into the ferroelectric orthorhombic phase. It can hinder the integration of hafnia ferroelectric films on flexible substrates including plastic and polymer, which are not endurable at high temperatures above 300 °C. Here, we propose the extremely low-temperature (∼250 °C) process for crystallization of Hf0.5Zr0.5O2 (HZO) thin films by applying a focused-microwave induced annealing method. HZO thin films on a flexible mica substrate exhibits robust remnant polarization (2Pr ∼ 50 μC/cm2), which is negligibly changed under bending tests. In addition, the electrical characteristics of a HZO capacitor on the mica substrate were evaluated, and ferroelectric thin film transistors (Fe-TFTs), using a HZO gate insulator, were fabricated on mica substrates for flexible synapse applications. Symmetric potentiation and depression characteristics are successfully demonstrated in the Fe-TFT memory devices, and the synaptic devices result in high recognition accuracy of 91.44%. The low-temperature annealing method used in this work are promising for forming hafnia-based Fe-TFT memory devices as a building block on a flexible platform.
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