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Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage

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    Research Article

    Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage
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    † ‡ †School of Electronic and Electrical Engineering and ‡SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea
    § Department of Applied Physics, Korea University, Sejong 339-700, Korea
    *E-mail: [email protected] (S.J.).
    *E-mail: [email protected] (S.L.).
    *E-mail: [email protected] (J.-H.P.).
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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2017, 9, 32, 27073–27082
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    https://doi.org/10.1021/acsami.7b07549
    Published August 4, 2017
    Copyright © 2017 American Chemical Society
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    Abstract

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    In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and −0.5 V, respectively), high on/off-current ratio (105), excellent cyclic endurance (>103), and long retention time (>104 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.

    Copyright © 2017 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsami.7b07549.

    • Accumulated I–V curves of PVP/PMF-based atomic switching devices with different PVP/PMF ratios; thicknesses of PVP/PMF electrolytes (50, 100, and 150%), as analyzed by AFM and SEM; accumulated I–V curves of PVP/PMF-based atomic switching devices with/without a Ti-buffer layer; applied pulse condition of ac pulse measurement; retention analysis of PVP/PMF-based atomic switching devices with/without a Ti-buffer layer; current distribution and three-dimensional CAFM images of 100% PVP/PMF electrolytes with/without a Ti-buffer layer; forming voltage variation by the PVP/PMF composition ratio and Ti-buffer layer insertion; operation of PVP/PMF device-based AND/OR gate circuits (PDF)

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    Cited By

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2017, 9, 32, 27073–27082
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsami.7b07549
    Published August 4, 2017
    Copyright © 2017 American Chemical Society
    Request reuse permissions

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