Excellent Resistive Switching Performance of Cu–Se-Based Atomic Switch Using Lanthanide Metal Nanolayer at the Cu–Se/Al2O3 InterfaceClick to copy article linkArticle link copied!
- Hyunsuk WooHyunsuk WooDepartment of Applied Physics, Korea University, 2511, Sejongro, Sejong 339-700, KoreaMore by Hyunsuk Woo
- Sujaya Kumar VishwanathSujaya Kumar VishwanathDepartment of Applied Physics, Korea University, 2511, Sejongro, Sejong 339-700, KoreaMore by Sujaya Kumar Vishwanath
- Sanghun Jeon*Sanghun Jeon*E-mail: [email protected]Department of Applied Physics, Korea University, 2511, Sejongro, Sejong 339-700, KoreaKorea Advanced Institute of Science and Technology (KAIST), School of Electrical Engineering, Daejeon, 34141, Republic of KoreaMore by Sanghun Jeon
Abstract
The next-generation electronic society is dependent on the performance of nonvolatile memory devices, which has been continuously improving. In the last few years, many memory devices have been introduced. However, atomic switches are considered to be a simple and reliable basis for next-generation nonvolatile devices. In general, atomic switch-based resistive switching is controlled by electrochemical metallization. However, excess ion injection from the entire area of the active electrode into the switching layer causes device nonuniformity and degradation of reliability. Here, we propose the fabrication of a high-performance atomic switch based on Cux–Se1–x by inserting lanthanide (Ln) metal buffer layers such as neodymium (Nd), samarium (Sm), dysprosium (Dy), or lutetium (Lu) between the active metal layer and the electrolyte. Current-atomic force microscopy results confirm that Cu ions penetrate through the Ln-buffer layer and form thin conductive filaments inside the switching layer. Compared with the Pt/Cux–Se1–x/Al2O3/Pt device, the optimized Pt/Cux–Se1–x/Ln/Al2O3/Pt devices show improvement in the on/off resistance ratio (102–107), retention (10 years/85 °C), endurance (∼10 000 cycles), and uniform resistance state distribution.
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