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Ultrathin, Transferred Layers of Metal Silicide as Faradaic Electrical Interfaces and Biofluid Barriers for Flexible Bioelectronic Implants

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    Article

    Ultrathin, Transferred Layers of Metal Silicide as Faradaic Electrical Interfaces and Biofluid Barriers for Flexible Bioelectronic Implants
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    • Jinghua Li
      Jinghua Li
      Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
      Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
      More by Jinghua Li
    • Rui Li
      Rui Li
      State Key Laboratory of Structural Analysis for Industrial Equipment, Department of Engineering Mechanics, International Research Center for Computational Mechanics, Dalian University of Technology, Dalian 116024, P.R. China
      More by Rui Li
    • Haina Du
      Haina Du
      Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
      More by Haina Du
    • Yishan Zhong
      Yishan Zhong
      Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
      More by Yishan Zhong
    • Yisong Chen
      Yisong Chen
      Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
      More by Yisong Chen
    • Kewang Nan
      Kewang Nan
      Department of Mechanical Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
      More by Kewang Nan
    • Sang Min Won
      Sang Min Won
      Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
      More by Sang Min Won
    • Jize Zhang
      Jize Zhang
      Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
      More by Jize Zhang
    • Yonggang Huang
      Yonggang Huang
      Department of Mechanical Engineering, Civil and Environmental Engineering, and Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
      More by Yonggang Huang
    • John A. Rogers*
      John A. Rogers
      Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
      Frederick Seitz Materials Research Laboratory, Department of Materials Science and Engineering, University of Illinois at Urbana—Champaign, Urbana, Illinois 61801, United States
      Center for Bio-Integrated Electronics, Departments of Biomedical Engineering, Neurological Surgery, Chemistry, Mechanical Engineering, Electrical Engineering and Computer Science, Simpson Querrey Institute for Nano/biotechnology, Northwestern University, Evanston, Illinois 60208, United States
      *E-mail: [email protected]
      More by John A. Rogers
      Orcidhttp://orcid.org/0000-0002-2980-3961
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    ACS Nano

    Cite this: ACS Nano 2019, 13, 1, 660–670
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    https://doi.org/10.1021/acsnano.8b07806
    Published January 4, 2019
    Copyright © 2019 American Chemical Society
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    Abstract

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    Actively multiplexed, flexible electronic devices represent the most sophisticated forms of technology for high-speed, high-resolution spatiotemporal mapping of electrophysiological activity on the surfaces of the brain, heart, and other organ systems. Materials that simultaneously serve as long-lived, defect-free biofluid barriers and sensitive measurement interfaces are essential for chronically stable, high-performance operation. Recent work demonstrates that conductively coupled electrical interfaces of this type can be achieved based on the use of highly doped monocrystalline silicon electrical “via” structures embedded in insulating nanomembranes of thermally grown silica. A limitation of this approach is that dissolution of the silicon in biofluids limits the system lifetimes to 1–2 years, projected based on accelerated testing. Here, we introduce a construct that extends this time scale by more than a factor of 20 through the replacement of doped silicon with a metal silicide alloy (TiSi2). Systematic investigations and reactive diffusion modeling reveal the details associated with the materials science and biofluid stability of this TiSi2/SiO2 interface. An integration scheme that exploits ultrathin, electronic microcomponents manipulated by the techniques of transfer printing yields high-performance active systems with excellent characteristics. The results form the foundations for flexible, biocompatible electronic implants with chronic stability and Faradaic biointerfaces, suitable for a broad range of applications in biomedical research and human healthcare.

    Copyright © 2019 American Chemical Society

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    Supporting Information

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    The Supporting Information is available free of charge on the ACS Publications website at DOI: 10.1021/acsnano.8b07806.

    • Supplementary notes, optical microscopic image of TiSi2 with defects caused by the deposition of excess amount of Ti followed by thermal annealing, cross-sectional profile of [Na+] in 90 nm thick TiSi2 formed on SOI substrate and immersed in PBS at 96 °C for different times (0, 10, 30 days), measured by secondary ion mass spectrometry, change in thickness of a membrane of p++-Si as a function of immersion time in PBS at 37 °C, results of bending tests of the NMOS transistor with TiSi2 encapsulation, optical image of a transistor encapsulated by p++-Si/TiSi2//t-SiO2 failed on day 13 (96 °C) showing bubbles, time-dependent dielectric breakdown testing (96 °C, VGS = 1 V) showing a sudden increase in leakage current on day 13, statistics of lifetimes of seven test devices with p++-Si//TiSi2via, p++-Si via, and no via, and SEM images of the conductive interface on day 0 (p++-Si) and day 12 (TiSi2) (96 °C) (PDF)

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    Cited By

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    This article is cited by 32 publications.

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    ACS Nano

    Cite this: ACS Nano 2019, 13, 1, 660–670
    Click to copy citationCitation copied!
    https://doi.org/10.1021/acsnano.8b07806
    Published January 4, 2019
    Copyright © 2019 American Chemical Society
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