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Phonon-Assisted Exciton Transfer into Silicon Using Nanoemitters: The Role of Phonons and Temperature Effects in Förster Resonance Energy Transfer

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    Phonon-Assisted Exciton Transfer into Silicon Using Nanoemitters: The Role of Phonons and Temperature Effects in Förster Resonance Energy Transfer
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    † Department of Physics and Department of Electrical and Electronics Engineering, UNAM−Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
    § Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering and School of Physical and Mathematical Sciences, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
    ⊥ Clippinger Research Laboratories, Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701, United States
    *Address correspondence to [email protected], [email protected]
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    ACS Nano

    Cite this: ACS Nano 2013, 7, 12, 10492–10501
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    https://doi.org/10.1021/nn404627p
    Published November 25, 2013
    Copyright © 2013 American Chemical Society
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    Abstract

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    We study phonon-assisted Förster resonance energy transfer (FRET) into an indirect band-gap semiconductor using nanoemitters. The unusual temperature dependence of this energy transfer, which is measured using the donor nanoemitters of quantum dot (QD) layers integrated on the acceptor monocrystalline bulk silicon as a model system, is predicted by a phonon-assisted exciton transfer model proposed here. The model includes the phonon-mediated optical properties of silicon, while considering the contribution from the multimonolayer-equivalent QD film to the nonradiative energy transfer, which is derived with a d–3 distance dependence. The FRET efficiencies are experimentally observed to decrease at cryogenic temperatures, which are well explained by the model considering the phonon depopulation in the indirect band-gap acceptor together with the changes in the quantum yield of the donor. These understandings will be crucial for designing FRET-enabled sensitization of silicon based high-efficiency excitonic systems using nanoemitters.

    Copyright © 2013 American Chemical Society

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    Supporting Information

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    Figures, text, and tables giving the model of phonon-assisted FRET from CdSe/ZnS QDs to monocrystalline bulk silicon, correction for the radiative lifetime of QDs due to the refractive index difference in the substrate, analysis of temperature-dependent luminescence lifetimes of the QDs, and analysis of interdot FRET between the QDs and theoretical parameters. This material is available free of charge via the Internet at http://pubs.acs.org.

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    ACS Nano

    Cite this: ACS Nano 2013, 7, 12, 10492–10501
    Click to copy citationCitation copied!
    https://doi.org/10.1021/nn404627p
    Published November 25, 2013
    Copyright © 2013 American Chemical Society
    Request reuse permissions

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